Abstract: A transducer for a wire bonding apparatus is formed of two separate parts sandwiching therebetween a plurality of piezoelectric elements. One of the two parts is the amplifying horn, and by selecting appropriate sizes and shapes for the two parts, vibrational energy can be concentrated at the distal end of the amplifying horn where the bonding tool is located.

Abstract: A method and system for parsing e-mail, and said system comprises a database and a server. The server is used to receive a e-mail, then parse and extract the content of the received e-mail, and lastly store the data extracted from the e-mail into the database. The server further includes a parsing unit, a notifying unit and a setting unit. The parsing unit is used to parse the e-mail, and extract the data according to preset key words. The notifying unit is used to inform the original sender, who sent the e-mail, and the notifying unit will generate a notification when the parsing unit extracts the specified data. The setting unit is used to modify the key word setting used in the parsing unit.

Abstract: A transducer for a wire bonding apparatus is formed of two separate parts sandwiching therebetween a plurality of piezoelectric elements. One of the two parts is the amplifying horn, and by selecting appropriate sizes and shapes for the two parts, vibrational energy can be concentrated at the distal end of the amplifying horn where the bonding tool is located.

Abstract: A fabricating method for a DRAM capacitor is provided. A DRAM is formed on a substrate, wherein a transistor has been formed. A first oxide layer is formed over the substrate and a contact window is formed on the first oxide layer to expose a source region of the transistor. Then, a bit line is formed in the contact window, wherein the bit line is connected to the source region of the transistor. A second oxide layer is formed on the bit line and the first oxide layer. Then, a third oxide layer is formed on the second oxide layer. A second contact window is further defined to expose a drain region of the transistor, wherein the drain region has a native oxide layer formed on it. Next, a first polysilicon film is formed on the exposed drain region of the second contact window. A high dosage implantation is used to remove the native oxide layer. Then, a second polysilicon layer is formed over the substrate. Finally, the finishing process followed is performed to complete the fabrication of a DRAM capacitor.

Abstract: A razor blade includes a substrate with a wedge-shaped edge at a distance of forty micrometers from the sharpened tip, and a layer of diamond or diamond-like material defined by facets that have an included angle of less than seventeen degrees that has a thickness of at least twelve hundred angstroms from the sharpened tip of said substrate to a distance of forty micrometers from the sharpened tip, and an ultimate tip defined by facets that have lengths of at least about 0.1 micrometer and define an included angle of at least sixty degrees, and that defines a tip radius of less than about 400 angstroms, an aspect ratio in the range of 1:1-3:1, a hardness of at least thirteen gigapascals and an L5 wet wool felt cutter force of less than 0.8 kilogram.

Abstract: Jack safety device, having a rotation key integral with a pressing spring, a hollow-set key lid, and a spanner fitting the spanner onto a hydraulic tank incorporating a camming bearing surface on the spanner so as to move the key into grooves on the hydraulic jack stem in one position of the spanner and lift the key out of the grooves in another position of the spanner.