Patents by Inventor Peter Cirigliano
Peter Cirigliano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8614149Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: GrantFiled: August 15, 2012Date of Patent: December 24, 2013Assignee: Lam Research CorporationInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S. M. Reza Sadjadi
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Patent number: 8491750Abstract: A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of confinement rings is separated by a space. A plunger moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is provided and coupled to the plunger. The proportional adjustment support is configured to move the confinement rings to one or more positions, such that the plunger is settable in positions along the plane. The positions define the space separating confinement rings, and the space is proportionally set between the confinement rings. The proportional adjustment support is defined by a plurality of support legs, and each of the support legs is pivotably interconnected with at least one other support leg.Type: GrantFiled: October 28, 2011Date of Patent: July 23, 2013Assignee: Lam Research CorporationInventor: Peter Cirigliano
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Publication number: 20120309201Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: ApplicationFiled: August 15, 2012Publication date: December 6, 2012Applicant: LAM RESEARCH CORPORATIONInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi
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Patent number: 8268118Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: GrantFiled: February 24, 2010Date of Patent: September 18, 2012Assignee: Lam Research CorporationInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S. M. Reza Sadjadi
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Publication number: 20120043021Abstract: A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of confinement rings is separated by a space. A plunger moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is provided and coupled to the plunger. The proportional adjustment support is configured to move the confinement rings to one or more positions, such that the plunger is settable in positions along the plane. The positions define the space separating confinement rings, and the space is proportionally set between the confinement rings. The proportional adjustment support is defined by a plurality of support legs, and each of the support legs is pivotably interconnected with at least one other support leg.Type: ApplicationFiled: October 28, 2011Publication date: February 23, 2012Inventor: Peter Cirigliano
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Patent number: 8080168Abstract: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted. In one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.Type: GrantFiled: March 4, 2008Date of Patent: December 20, 2011Assignee: Lam Research CorporationInventor: Peter Cirigliano
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Patent number: 7910489Abstract: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.Type: GrantFiled: February 17, 2006Date of Patent: March 22, 2011Assignee: Lam Research CorporationInventors: Ji Soo Kim, Peter Cirigliano, Sangheon Lee, Dongho Heo, Daehan Choi, S. M. Reza Sadjadi
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Patent number: 7772122Abstract: An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.Type: GrantFiled: September 18, 2008Date of Patent: August 10, 2010Assignee: Lam Research CorporationInventors: Peter Cirigliano, Helen Zhu, Ji Soo Kim, S. M. Reza Sadjadi
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Publication number: 20100148317Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: ApplicationFiled: February 24, 2010Publication date: June 17, 2010Applicant: LAM RESEARCH CORPORATIONInventors: Sangheon LEE, Dae-Han CHOI, Jisoo KIM, Peter CIRIGLIANO, Zhisong HUANG, Robert CHARATAN, S.M. Reza SADJADI
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Patent number: 7695632Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.Type: GrantFiled: May 31, 2005Date of Patent: April 13, 2010Assignee: Lam Research CorporationInventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi
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Patent number: 7682516Abstract: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.Type: GrantFiled: October 5, 2005Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: S. M. Reza Sadjadi, Peter Cirigliano, Jisoo Kim, Zhisong Huang, Eric A. Hudson
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Publication number: 20100068885Abstract: An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.Type: ApplicationFiled: September 18, 2008Publication date: March 18, 2010Applicant: LAM RESEARCH CORPORATIONInventors: Peter CIRIGLIANO, Helen Zhu, Ji Soo Kim, S. M. Sadjadi
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Publication number: 20090311871Abstract: A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched.Type: ApplicationFiled: June 13, 2008Publication date: December 17, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Helen H. Zhu, Peter Cirigliano, S. M. Reza Sadjadi
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Publication number: 20090121324Abstract: A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.Type: ApplicationFiled: January 6, 2009Publication date: May 14, 2009Applicant: LAM RESEARCH CORPORATIONInventors: S. M. Reza Sadjadi, Peter Cirigliano, Ji Soo Kim, Zhisong Huang, Eric A. Hudson
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Patent number: 7491647Abstract: A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.Type: GrantFiled: September 9, 2005Date of Patent: February 17, 2009Assignee: Lam Research CorporationInventors: S. M. Reza Sadjadi, Peter Cirigliano, Ji Soo Kim, Zhisong Huang, Eric A. Hudson
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Patent number: 7396769Abstract: A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping gas comprising CO2 is provided. A plasma is formed from the stripping gas comprising CO2. The plasma from the stripping gas comprising CO2 is used to strip the patterned photoresist mask.Type: GrantFiled: August 2, 2004Date of Patent: July 8, 2008Assignee: Lam Research CorporationInventors: Eric A. Hudson, Peter Cirigliano
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Publication number: 20080149595Abstract: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted. In one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.Type: ApplicationFiled: March 4, 2008Publication date: June 26, 2008Inventor: Peter Cirigliano
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Patent number: 7364623Abstract: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted. In one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.Type: GrantFiled: January 27, 2005Date of Patent: April 29, 2008Assignee: Lam Research CorporationInventor: Peter Cirigliano
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Patent number: 7294580Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.Type: GrantFiled: June 3, 2004Date of Patent: November 13, 2007Assignee: Lam Research CorporationInventors: Seokmin Yun, Ji Zhu, Peter Cirigliano, Sangheon Lee, Thomas S. Choi, Peter Loewenhardt, Mark H. Wilcoxson, Reza Sadjadi, Eric A. Hudson, James V. Tietz
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Publication number: 20070193973Abstract: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.Type: ApplicationFiled: February 17, 2006Publication date: August 23, 2007Inventors: Ji Kim, Peter Cirigliano, Sangheon Lee, Dongho Heo, Daehan Choi, S. Sadjadi