Abstract: A transceiver comprising a CMOS chip and a plurality of semiconductor lasers coupled with the CMOS chip may be operable to communicate optical source signals from the plurality of semiconductor lasers into the CMOS chip. The source signals may be used to generate first optical signals that may be transmitted from the CMOS chip to optical fibers. Second optical signals may be received from the optical fibers and converted to electrical signals for use by the CMOS chip. The optical source signals may be communicated from the semiconductor lasers into the CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the CMOS chip. The first optical signals may be communicated from the CMOS chip via optical couplers, which may comprise grating couplers.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices with at least a portion of each of the wafers bonded together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices bonded to at least a portion of each of the wafers together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions.

Abstract: Methods and systems for a light source assembly supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The assembly may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source assembly to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source assembly may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench.

Abstract: A transceiver comprising a CMOS chip and a laser coupled to the chip may be operable to communicate an optical source signal from a semiconductor laser into the CMOS chip. The optical source signal may be used to generate first optical signals that are transmitted from the CMOS chip to optical fibers coupled to the CMOS chip. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors in the CMOS chip. The optical source signal may be communicated from the semiconductor laser into the CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the CMOS chip. The optical source signal may be communicated into the CMOS chip and the first optical signals may be communicated from the CMOS chip via optical couplers, which may comprise grating couplers.

Abstract: A transceiver comprising a plurality of CMOS chips may be operable to communicate an optical source signal from a semiconductor laser into a first CMOS chip via optical couplers. The optical source signal may be used to generate first optical signals that are transmitted from the first CMOS chip to optical fibers coupled to the first CMOS chip via one or more optical couplers. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors in the first CMOS chip. The optical source signal may be communicated from the semiconductor laser into the first CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the first CMOS chip. The electrical signals may be communicated to at least a second of the plurality of CMOS chips comprising electronic devices.

Abstract: A transceiver comprising a plurality of CMOS chips may be operable to communicate an optical source signal from a semiconductor laser into a first CMOS chip via optical couplers. The optical source signal may be used to generate first optical signals that are transmitted from the first CMOS chip to optical fibers coupled to the first CMOS chip via one or more optical couplers. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors in the first CMOS chip. The optical source signal may be communicated from the semiconductor laser into the first CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the first CMOS chip. The electrical signals may be communicated to at least a second of the plurality of CMOS chips comprising electronic devices.

Abstract: A transceiver comprising a CMOS chip and a laser coupled to the chip may be operable to communicate an optical source signal from a semiconductor laser into the CMOS chip. The optical source signal may be used to generate first optical signals that are transmitted from the CMOS chip to optical fibers coupled to the CMOS chip. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors in the CMOS chip. The optical source signal may be communicated from the semiconductor laser into the CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the CMOS chip. The optical source signal may be communicated into the CMOS chip and the first optical signals may be communicated from the CMOS chip via optical couplers, which may comprise grating couplers.

Abstract: A transceiver on a CMOS chip including optical and optoelectronic devices, and electronic circuitry may be operable to communicate optical signals between the CMOS chip and optical fibers coupled to the CMOS chip via a semiconductor laser and one or more photodetectors. The optical and optoelectronic devices may include waveguides, modulators, multiplexers, switches, and couplers. The photodetector may be integrated in the CMOS chip. The photodetector and the semiconductor laser may be mounted on the CMOS chip. The optical signals may be communicated out of and in to a top surface of the CMOS chip. A transceiver on a CMOS chip including optical and optoelectronic devices, and electronic circuitry, may be operable to communicate optical signals between the CMOS chip and optical fibers coupled to the CMOS chip via grating couplers. The optical signals may be communicated out of and in to a top surface of the CMOS chip.

Abstract: A method and system for single laser bidirectional links are disclosed and may include communicating a high speed optical signal from a transmit CMOS photonics chip to a receive CMOS photonics chip and communicating a low-speed optical signal from the receive CMOS photonics chip to the transmit CMOS photonics chip via one or more optical fibers. The optical signals may be coupled to and from the CMOS photonics chips utilizing single-polarization grating couplers. The optical signals may be coupled to and from the CMOS photonics chips utilizing polarization-splitting grating couplers. The optical signals may be amplitude or phase modulated. The optical fibers may comprise single-mode or polarization-maintaining fibers. A polarization of the high-speed optical signal may be configured before communicating it over the single-mode fibers. The low-speed optical signal may be generated by modulating the received high-speed optical signal or from a portion of the received high-speed optical signal.

Abstract: Systems and methods for configuring an integrated transceiver are disclosed. In one embodiment, very small form factor transceivers can be configured to allow 10 G optical interconnects over distances up to 2 km. Transceiver circuitry can be integrated on a single die, and be electrically connected to a transmitter such as a laser-diode and a receiver such as a photo-diode. In one embodiment, the laser and photo diodes can be edge-operating, and be mounted on the die. In one embodiment, one or both of the diodes can be surface-operating so as to allow relaxation of alignment requirement. In one embodiment, one or both of the diodes can be mounted on a submount that is separate from the die so as to facilitate separate assembly and testing. In one embodiment, the diodes can be optically coupled to a ferrule via an optical coupling element so as to manage loss in certain situations.

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-insulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

Abstract: Systems and methods for configuring an integrated transceiver are disclosed. In one embodiment, very small form factor transceivers can be configured to allow 10G optical interconnects over distances up to 2k km. Transceiver circuitry can be integrated on a single die, and be electrically connected to a transmitter such as a laser-diode and a receiver such as a photo-diode. In one embodiment, the laser and photo diodes can be edge-operating, and be mounted on the die. In one embodiment, one or both of the diodes can be surface-operating so as to allow relaxation of alignment requirement. In one embodiment, one or both of the diodes can be mounted to a submount that is separate from the die so as to facilitate separate assembly and testing. In one embodiment, the diodes can be optically coupled to a ferrule via an optical coupling element so as to manage loss in certain situations.

Abstract: Methods and systems for a light source assembly supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The assembly may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source assembly to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source assembly may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench.

Abstract: Systems and methods for configuring an integrated transceiver are disclosed. In one embodiment, very small form factor transceivers can be configured to allow 10 G optical interconnects over distances up to 2 km. Transceiver circuitry can be integrated on a single die, and be electrically connected to a transmitter such as a laser-diode and a receiver such as a photo-diode. In one embodiment, the laser and photo diodes can be edge-operating, and be mounted on the die. In one embodiment, one or both of the diodes can be surface-operating so as to allow relaxation of alignment requirement. In one embodiment, one or both of the diodes can be mounted on a submount that is separate from the die so as to facilitate separate assembly and testing. In one embodiment, the diodes can be optically coupled to a ferrule via an optical coupling element so as to manage loss in certain situations.

Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Abstract: Various embodiments include optically aligning and connecting optical devices to optical grating couplers using a variety of bonding techniques, as a means of transferring optical signals to and from optoelectronic integrated circuits.