Abstract: An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

Abstract: An illumination system comprising a radiation source and a monolithic ceramic luminescence converter comprising a composite material of at least one luminescent compound, and at least one non-luminescent compound, wherein the material of the non-luminescent compound comprises silicon and nitrogen, is advantageously used, when the luminescent compound comprises an rare-earth metal-activated host compound also comprising silicon and nitrogen. Shared chemical characteristics of the luminescent compound and the non-luminescent material improve phase assemblage, thermal and optical behavior. The invention relates also to a composite monolithic ceramic luminescence converter.

Abstract: The invention relates to an illumination system having a light scattering and conversion plate comprising a non-converting but scattering layer and a thinner converting layer. By separating scattering and conversion, the characteristics of the illumination system can greatly be increased.

Abstract: An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Abstract: The invention provides a light emitting diode device comprising a light emitting diode arranged on a substrate and a wavelength converting element. The wavelength converting element contains as a luminescent material a Mn4+-activated fluoride compound having a garnet-type crystal structure. The Mn4+-activated fluoride compound preferably answers the general formula {A3}[B2-x-yMnxMgy](Li3)F12-dOd, in which formula A stands for at least one element selected from the series consisting of Na+ and K+ and B stands for at least one element selected from the series consisting of Al3+, B3+, Sc3+, Fe3+, Cr3+, Ti4+ and In3+, and in which formula x ranges between 0.02 and 0.2, y ranges between 0.0 (and incl. 0.0) and 0.4 and d ranges between 0 (and incl. 0) and 1. Said compound is most preferably {Na3}[Al2-x-yMnxMgy](Li3)F12-dOd.

Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

Abstract: The invention relates to an illumination system having a light scattering and conversion plate comprising a non-converting but scattering layer and a thinner converting layer. By separating scattering and conversion, the characteristics of the illumination system can greatly be increased.

Abstract: The invention relates to an illumination system having a light scattering and conversion plate comprising a non-converting but scattering layer and a thinner converting layer. By separating scattering and conversion, the characteristics of the illumination system can greatly be increased.

Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

Abstract: A light emission diode (LED) assembly, comprising a LED die (10), a phosphor layer (12), and a filter layer (14), wherein said filter layer (14) is developed in such a manner that light rays with a wavelength of about 400 nm to 500 nm, preferably of about 420 nm to 490 nm, emitted from the LED die (10) are at least partially reflected depending on their emission angle to the normal on the filter layer (14). With the inventive LED assembly it is possible to provide a LED assembly which solves the yellow ring problem without a reduction of the efficiency of the LED assembly.

Abstract: The invention relates to an illumination system having a light scattering and conversion plate comprising a non-converting but scattering layer and a thinner converting layer. By separating scattering and conversion, the characteristics of the illumination system can greatly be increased.

Abstract: The invention relates to an illumination system having a light scattering and conversion plate comprising a non-converting but scattering layer and a thinner converting layer. By separating scattering and conversion, the characteristics of the illumination system can greatly be increased.

Abstract: The invention relates to a light emitting device comprising a light source, especially a LED, and a luminescent material, which is a ceramic multiphase material essentially of the composition M2?zCezSi5?x?y?(z?z1)Ay+(z?z1)N8?4x?y+z1O4x+y?z1. This material has been found to have a composition of at least two phases, which leads to a better producibility as well as photostability and conversion efficiency.

Abstract: The invention relates to a light emitting device, especially a LED comprising a green emitting material of the composition Sr5?y?z?aMySi23?xAl3+xOx+2aN37?x?2a:Euz:Cez1. This material has been found to have a narrow emission in the green wavelight range together with a good producibility and stability.

Abstract: The invention relates to a red emitting material of the composition a(MIIN2/3)*b(MIIIN)*c(MIVN4/3)*d1CeO3/2*d2EuO*xMIVO2*yMIIIO3/2 with Cerium and Europium present in the material. This material has been found to have an increased lumen equivalent and absorption efficiency of blue light.

Abstract: The invention relates to an improved red light emitting material of the formula M1?yA1+xSi4?xN7?x?2yOx+2y:RE whereby M is selected out of the group comprising Ba, Sr, Ca, Mg or mixtures thereof, A is selected out of the group comprising Al, Ga, B or mixtures thereof, RE is selected out of the group comprising rare earth metals, Y, La, Sc or mixtures thereof and x is ?0 and ?1 and y is ?0 and ?0.2. This material is believed to crystallize in a novel structure type that comprises two individual lattice sites for rare earth metal incorporation, which leads to an improved lighting behaviour.

Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 ?m.