Abstract: A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.

Abstract: There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (EA) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

Abstract: There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (EA) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

Abstract: An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of: the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A method of forming a polymer device including the steps (i) of depositing on a substrate a solution containing a polymer or oligomer and a crosslinking moiety, to form a layer, and, (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, wherein the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 mol % to 5 mol % based on the total number of moles or repeat units of the polymer or oligomer and the crosslinking moiety in the solution.

Abstract: A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.

Abstract: There is provided a class of crosslinking compound, said compound comprising (i) one or more fluorinated aromatic group; and (ii) one or more ionizable group, wherein the crosslinking compound is soluble in at least one polar solvent. Methods of preparing the crosslinking compounds are also disclosed. There is further provided devices obtainable from the methods of preparing the crosslinking compounds.

Abstract: A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.

Abstract: A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric l

Abstract: An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EAsemicond; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterized in that the bulk concentration of trapping groups in the gate dielectric layer is less than 1018 cm?3, where a trapping group is a group having (i) an electron affinity EAX greater than or equal to EAsemicond and/or (ii) a reactive electron affinity EArxn greater than or equal to (EAsemicond.?2 eV).

Abstract: There is provided a class of crosslinking compound, said compound comprising (i) one or more fluorinated aromatic group; and (ii) one or more ionisable group, wherein the crosslinking compound is soluble in at least one polar solvent. Methods of preparing the crosslinking compounds are also disclosed. There is further provided devices obtainable from the methods of preparing the crosslinking compounds.

Abstract: A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.

Abstract: The present invention provides a conductive composite comprising: suspension matrix, metal nanoparticles suspended within the suspension matrix, wherein the conductive composite has a conductivity greater than 104 S cm?1.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: Apparatus comprising a first polymer layer carrying positively charged moieties and a net positive charge; a second polymer layer carrying negatively charged moieties and a net negative charge; and a dielectric substrate; the first and second polymer layers constituting a multilayer coating on the dielectric substrate. Method for fabrication of an electrostatic charge dissipation coating comprising steps of providing a dielectric substrate susceptible to electrostatic charge accumulation; coating the dielectric substrate with a first polymer carrying charged moieties and a net charge having a first sign; and then coating the dielectric substrate with a second polymer carrying charged moieties and a net charge having a second sign opposite to the first sign.