Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.

Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.

Abstract: A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. in a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

Abstract: The present disclosure relates to a method for producing a network of interconnected nanostructures comprising the steps of: providing a substantially plane substrate; growing a plurality of elongated nanostructures from the substrate; kinking the growth direction of at least a part of the nanostructures such that at least part of the kinked nanostructures are growing in a network plane parallel to the substrate, and creating one or more network(s) of interconnected kinked nanostructures in the network plane, wherein a dielectric support layer is provided below the network plane to support said network(s) of interconnected nanostructures.

Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.

Abstract: Various fabrication method are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.

Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Abstract: The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit.

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit.

Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Abstract: The present disclosure relates to a method for producing a network of interconnected nanostructures comprising the steps of: providing a substantially plane substrate; growing a plurality of elongated nanostructures from the substrate; kinking the growth direction of at least a part of the nanostructures such that at least part of the kinked nanostructures are growing in a network plane parallel to the substrate, and creating one or more network(s) of interconnected kinked nanostructures in the network plane, wherein a dielectric support layer is provided below the network plane to support said network(s) of interconnected nanostructures.

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.