Patents by Inventor Peter Kurunczi

Peter Kurunczi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200233125
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: February 9, 2020
    Publication date: July 23, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Publication number: 20200166681
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Publication number: 20200126757
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 23, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 10598832
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: March 24, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Publication number: 20200018981
    Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an etch stop layer atop a substrate, and providing an optical grating layer atop the etch stop layer. The method may further include providing a patterned mask layer over the optical grating layer, and etching the optical grating layer and the patterned mask layer to form an optical grating in the optical grating layer. The optical grating may include a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the etching forms an area of over-etch in the etch stop layer between the plurality of angled components.
    Type: Application
    Filed: July 13, 2018
    Publication date: January 16, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi
  • Publication number: 20200018985
    Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optically transparent substrate, and forming an optical grating layer on the substrate. The method includes forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled components, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. A first sidewall of the optical grating may have a first angle, and a second sidewall of the grating has a second angle different than the first angle. Modifying process parameters, including selectivity and beam angle spread, has an effect of changing a shape or dimension of the plurality of angled components.
    Type: Application
    Filed: July 13, 2018
    Publication date: January 16, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi
  • Patent number: 10522330
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: December 31, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Publication number: 20190212480
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: January 9, 2018
    Publication date: July 11, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Publication number: 20170092473
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having a conductive beam optic, the beam optic having a varied geometry configured to generate a concentrated electric field proximate the beam optic. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the one or more beam optics, in parallel, to selectively (e.g., individually) generate plasma in an area corresponding to the concentrated electric field. By providing custom-shaped ion beam optics, plasma density is strategically enhanced in areas where surface contamination is most prevalent, thus improving cleaning efficiency and minimizing tool down time.
    Type: Application
    Filed: September 28, 2015
    Publication date: March 30, 2017
    Inventors: William Davis Lee, Kevin Anglin, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii
  • Publication number: 20160365225
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
    Type: Application
    Filed: August 7, 2015
    Publication date: December 15, 2016
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 8659229
    Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: February 25, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter Kurunczi, Frank Sinclair, Costel Biloiu, Ludovic Godet, Ernest Allen
  • Patent number: 8450051
    Abstract: A system and method of exposing photoresist on the surface of the solar cell to light so as to create an appropriate mask is disclosed. A microcavity array is used to expose the photoresist to UV light in a pattern that matches the desired pattern on the solar cell. Microcavity arrays consist of an array of cavities, which may include tens of thousands of cavities. When an appropriate potential is applied to an electrode, a plasma is formed in the activated cavity. If the cavity contains a suitable gaseous environment, these activated cavities will emit light in the near ultraviolet spectrum. By properly configuring the locations of the activated cavities, a UV source may be created that exposes the photoresist in a desired pattern. The desired pattern can be created by selectively activating cavities, disabling certain cavities, or filling certain cavities so that they cannot create a plasma.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: May 28, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas Bateman, Peter Kurunczi
  • Publication number: 20120295398
    Abstract: An improved method of fabricating a resistive memory device is disclosed. A resistive memory includes a bottom electrode, a top electrode and a resistive material layer interposed therebetween. Interfaces are formed between the resistive material layer and the respective top and bottom electrodes. Ions are implanted in the device to change the characteristics of one or both of these interfaces, thereby improving the performance of the memory device. These ions may be implanted after the three layers are fabricated, during the fabrication of these layers, or at both times.
    Type: Application
    Filed: May 10, 2012
    Publication date: November 22, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Peter Kurunczi, John Hautala
  • Publication number: 20120293070
    Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
    Type: Application
    Filed: May 16, 2011
    Publication date: November 22, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Peter Kurunczi, Frank Sinclair, Costel Biloiu, Ludovic Godet, Ernest Allen
  • Publication number: 20120156592
    Abstract: A system and method of exposing photoresist on the surface of the solar cell to light so as to create an appropriate mask is disclosed. A microcavity array is used to expose the photoresist to UV light in a pattern that matches the desired pattern on the solar cell. Microcavity arrays consist of an array of cavities, which may include tens of thousands of cavities. When an appropriate potential is applied to an electrode, a plasma is formed in the activated cavity. If the cavity contains a suitable gaseous environment, these activated cavities will emit light in the near ultraviolet spectrum. By properly configuring the locations of the activated cavities, a UV source may be created that exposes the photoresist in a desired pattern. The desired pattern can be created by selectively activating cavities, disabling certain cavities, or filling certain cavities so that they cannot create a plasma.
    Type: Application
    Filed: December 20, 2010
    Publication date: June 21, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas Bateman, Peter Kurunczi
  • Patent number: 7812321
    Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
    Type: Grant
    Filed: June 11, 2008
    Date of Patent: October 12, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter Kurunczi, Rajesh Dorai, Costel Biloiu, Wilhelm Platow
  • Publication number: 20090309041
    Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
    Type: Application
    Filed: June 11, 2008
    Publication date: December 17, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter Kurunczi, Rajesh Dorai, Costel Biloiu, Wilhelm Platow
  • Patent number: 7459704
    Abstract: Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
    Type: Grant
    Filed: November 8, 2005
    Date of Patent: December 2, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph C. Olson, Anthony Renau, Donna L. Smatlak, Kurt Deckerlucke, Paul Murphy, Alexander S. Perel, Russell J. Low, Peter Kurunczi
  • Publication number: 20070187615
    Abstract: A charge monitoring system may include a platen having a surface configured to accept a wafer thereon, and a charge monitor disposed relative to the platen so that an ion beam simultaneously strikes a portion of the charge monitor and a portion of the wafer. The charge monitor is configured to provide a charge monitor signal representative of a charge on a surface of the wafer when the ion beam simultaneously strikes the portion of the charge monitor and the portion of the wafer. The charge monitor signal may depend, at least in part, on a beam potential of the ion beam.
    Type: Application
    Filed: February 14, 2006
    Publication date: August 16, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell Low, George Gammel, Peter Kurunczi, Eric Cobb
  • Publication number: 20060272675
    Abstract: An apparatus for cleaning objects using plasma is disclosed. The apparatus includes a first plurality of elongated dielectric barrier members arranged adjacent each other; a second plurality of elongated dielectric barrier members arranged adjacent each other and stacked juxtaposed the first plurality of elongated dielectric barrier members; and a plurality of electrodes, each contained within, and extending substantially along the length of, respective ones of the first and second plurality of stacked elongated dielectric barrier members.
    Type: Application
    Filed: June 2, 2005
    Publication date: December 7, 2006
    Inventor: Peter Kurunczi