Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having a conductive beam optic, the beam optic having a varied geometry configured to generate a concentrated electric field proximate the beam optic. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the one or more beam optics, in parallel, to selectively (e.g., individually) generate plasma in an area corresponding to the concentrated electric field. By providing custom-shaped ion beam optics, plasma density is strategically enhanced in areas where surface contamination is most prevalent, thus improving cleaning efficiency and minimizing tool down time.

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

Abstract: A system and method of exposing photoresist on the surface of the solar cell to light so as to create an appropriate mask is disclosed. A microcavity array is used to expose the photoresist to UV light in a pattern that matches the desired pattern on the solar cell. Microcavity arrays consist of an array of cavities, which may include tens of thousands of cavities. When an appropriate potential is applied to an electrode, a plasma is formed in the activated cavity. If the cavity contains a suitable gaseous environment, these activated cavities will emit light in the near ultraviolet spectrum. By properly configuring the locations of the activated cavities, a UV source may be created that exposes the photoresist in a desired pattern. The desired pattern can be created by selectively activating cavities, disabling certain cavities, or filling certain cavities so that they cannot create a plasma.

Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

Abstract: An improved method of fabricating a resistive memory device is disclosed. A resistive memory includes a bottom electrode, a top electrode and a resistive material layer interposed therebetween. Interfaces are formed between the resistive material layer and the respective top and bottom electrodes. Ions are implanted in the device to change the characteristics of one or both of these interfaces, thereby improving the performance of the memory device. These ions may be implanted after the three layers are fabricated, during the fabrication of these layers, or at both times.

Abstract: A system and method of exposing photoresist on the surface of the solar cell to light so as to create an appropriate mask is disclosed. A microcavity array is used to expose the photoresist to UV light in a pattern that matches the desired pattern on the solar cell. Microcavity arrays consist of an array of cavities, which may include tens of thousands of cavities. When an appropriate potential is applied to an electrode, a plasma is formed in the activated cavity. If the cavity contains a suitable gaseous environment, these activated cavities will emit light in the near ultraviolet spectrum. By properly configuring the locations of the activated cavities, a UV source may be created that exposes the photoresist in a desired pattern. The desired pattern can be created by selectively activating cavities, disabling certain cavities, or filling certain cavities so that they cannot create a plasma.

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract: Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

Abstract: A charge monitoring system may include a platen having a surface configured to accept a wafer thereon, and a charge monitor disposed relative to the platen so that an ion beam simultaneously strikes a portion of the charge monitor and a portion of the wafer. The charge monitor is configured to provide a charge monitor signal representative of a charge on a surface of the wafer when the ion beam simultaneously strikes the portion of the charge monitor and the portion of the wafer. The charge monitor signal may depend, at least in part, on a beam potential of the ion beam.

Abstract: An apparatus and method for cleaning objects using plasma are disclosed. The apparatus provides a plurality of elongated dielectric barrier members arranged adjacent each other; a first set of electrodes arranged to be coupled to a voltage source at a first voltage, each electrode of the first set contained within, and extending substantially along the length of, a first set of the elongated dielectric barrier members; and a second set of electrodes arranged to be coupled to a voltage source at a second voltage, each electrode of the second set contained within, and extending substantially along the length of, a second set of the elongated dielectric barrier members; whereby, when the first and second voltages are applied, dielectric barrier discharges are created to form plasma between adjacent elongated dielectric barrier members for cleaning at least a portion of the objects.

Abstract: An apparatus for cleaning objects using plasma is disclosed. The apparatus includes a first plurality of elongated dielectric barrier members arranged adjacent each other; a second plurality of elongated dielectric barrier members arranged adjacent each other and stacked juxtaposed the first plurality of elongated dielectric barrier members; and a plurality of electrodes, each contained within, and extending substantially along the length of, respective ones of the first and second plurality of stacked elongated dielectric barrier members.

Abstract: A method and apparatus for cleaning and surface conditioning objects using plasma are disclosed. One embodiment of the method discloses providing a plurality of elongated dielectric barrier members arranged adjacent each other, the elongated dielectric barrier members having electrodes coupled therein, providing a ground plane, introducing the objects proximate the elongated dielectric barrier members and the ground plane, and producing a dielectric barrier discharge to form plasma between the ground plane and the elongated dielectric barrier members for cleaning the objects. One embodiment of the apparatus for cleaning objects using plasma discloses a plurality of elongated dielectric barrier members arranged adjacent each other, a plurality of electrodes, each contained within, and extending substantially along the length of, respective ones of the elongated dielectric barrier members, and a ground plane proximate the plurality of elongated dielectric barrier members.

Abstract: A method and apparatus for cleaning and surface conditioning objects using plasma are disclosed. One embodiment of the apparatus for cleaning conductive objects using plasma discloses at least one planar dielectric barrier plate having a first surface and a second surface, and at least one electrode proximate the second surface of the at least one planar dielectric barrier plate, wherein the planar dielectric barrier plate is positioned to receive at least one object substantially orthogonally proximate the first surface. Another embodiment of the apparatus includes a ground plane for cleaning non-conductive objects, wherein the ground plane has apertures sized and arranged for receiving each object to be cleaned.

Abstract: An apparatus and method for cleaning objects using plasma are disclosed. The apparatus provides a plurality of elongated dielectric barrier members arranged adjacent each other, a plurality of electrodes each contained within, and extending substantially along the length of, the plurality of elongated dielectric barrier members, and at least one buss bar for electrically coupling the plurality of electrodes to a voltage source.

Abstract: Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

Abstract: A method and apparatus for cleaning and surface conditioning objects using plasma is disclosed. One embodiment of the method discloses providing a plurality of elongated dielectric barrier members arranged adjacent each other, the members having electrodes connected therein, introducing the objects proximate the members, and producing a dielectric barrier discharge to form plasma between the objects and the members for cleaning the objects. One embodiment of the apparatus for cleaning objects using plasma discloses a plurality of elongated dielectric barrier members arranged adjacent each other, and a plurality of electrodes, each contained within, and extending substantially along the length of, respective ones of the elongated dielectric barrier members.

Abstract: A method and apparatus for cleaning and surface conditioning objects using plasma is disclosed. One embodiment of the method discloses providing a plurality of elongated dielectric barrier plates arranged adjacent each other, the plates having inner electrodes connected therein, introducing the objects proximate the plates, and producing a dielectric barrier discharge to form plasma between the objects and the plates for cleaning at least a portion of the objects. One embodiment of the apparatus for cleaning objects using plasma discloses a plurality of elongated dielectric barrier plates arranged adjacent each other, and a plurality of inner electrodes, each contained within, and extending substantially along the length of, respective ones of the elongated dielectric barrier plates.

Abstract: The present invention relates to methods and apparatus for the use of atmospheric pressure non-thermal plasma to clean and sterilize the surfaces of liquid handling devices. In one embodiment, a method of cleaning a fluid handling device includes the steps of inserting a tip of the fluid handling device into an interior of a channel through a first opening disposed at a first end of the channel, wherein a first electrode is disposed adjacent an exterior of the channel; causing a plasma to be formed within the interior of the channel; and removing the fluid handling device from the channel through the first opening.