Abstract: A brine generation system includes a tank having an upper opening configured for receiving salt crystals to fill the tank. A divider separates a tank volume into an upper portion adapted for holding salt crystals a lower portion adapted for holding a brine solution. The divider is adapted to resist movement of salt crystals into the lower portion but is permeable to allow the brine solution to fall into the lower portion. A fluid conduit disposed within the upper portion includes at least one water jet for injecting water in a direction towards the salt crystals. The tank further includes an outlet positioned in the lower portion of the tank for withdrawing brine.

Abstract: A brine generation system includes a tank unit having a tank body and a divider which separates the tank into an upper portion for holding salt crystals and a lower portion for holding brine. The divider is adapted to resist the movement of salt crystals greater than a predetermined size and to permit the brine solution to pass from the upper portion through the divider to the lower portion by the effect of gravity. The divider includes a sump channel having an opening in communication with the upper portion of the tank unit. The sump channel is adapted to collect non-soluble particles greater than a predetermined size and permit the brine solution in the sump channel to pass therethrough to the lower portion of the tank unit. The sump channel is in communication with a sediment discharge port defined in the tank body.

Abstract: A battery holder arrangement for a vehicle that includes a battery and at least one bodywork component having at least one projection which acts as a catch for the battery. In a normal state of the vehicle, the battery is not held by the projection, and in a damaged state of the vehicle, the battery is held by the projection.

Abstract: A battery holder arrangement for a vehicle that includes a battery and at least one bodywork component having at least one projection which acts as a catch for the battery. In a normal state of the vehicle, the battery is not held by the projection, and in a damaged state of the vehicle, the battery is held by the projection.

Abstract: A method for processing a semiconductor device in accordance with various embodiments may include: providing a semiconductor device having a first pad and a second pad electrically disconnected from the first pad; applying at least one electrical test potential to at least one of the first pad and the second pad; and electrically connecting the first pad and the second pad to one another after applying the at least one electrical test potential.

Abstract: A test method in accordance with one or more embodiments may include: providing a semiconductor device to be tested, the semiconductor device including at least one device cell, the at least one device cell having at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode may be controlled separately from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell.

Abstract: One embodiment of a semiconductor device includes a dense trench transistor cell array. The dense trench transistor cell array includes a plurality of transistor cells in a semiconductor body. A width w3 of a transistor mesa region of each of the plurality of transistor cells and a width w1 of a first trench of each of the plurality of transistor cells satisfy the following relationship: w3<1.5×w1. The semiconductor device further includes semiconductor diodes. At least one of the semiconductor diodes is arranged between first and second parts of the plurality of transistor cells and includes a diode mesa region adjoining opposing walls of second trenches. A depth d1 of the first trench and a depth d2 of the second trenches differ by at least 20%.

Abstract: The present application relates to novel substituted dicyanopyridines, to processes for their preparation, to their use for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, preferably for the treatment and/or prophylaxis of cardiovascular disorders.

Abstract: One embodiment of a semiconductor device includes a dense trench transistor cell array. The dense trench transistor cell array includes a plurality of transistor cells in a semiconductor body. A width w3 of a transistor mesa region of each of the plurality of transistor cells and a width w1 of a first trench of each of the plurality of transistor cells satisfy the following relationship: w3<1.5×w1. The semiconductor device further includes semiconductor diodes. At least one of the semiconductor diodes is arranged between first and second parts of the plurality of transistor cells and includes a diode mesa region adjoining opposing walls of second trenches. A depth d1 of the first trench and a depth d2 of the second trenches differ by at least 20%.

Abstract: A method of manufacturing a semiconductor device includes providing a layered structure having a hard dielectric layer containing a first dielectric material having a Young's modulus greater than 10 GPa in a central portion of a main surface of a main body comprising a single crystalline semiconductor body, and providing a dielectric stress relief layer containing a second dielectric material having a lower Young's modulus than the first dielectric material, the stress relief layer covering the layered structure and extending beyond an outer edge of the layered structure.

Abstract: The present application relates to novel 2-alkoxy-substituted dicyanopyridines, to processes for their preparation, to their use for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, preferably for the treatment and/or prevention of cardiovascular disorders.

Abstract: A test method in accordance with one or more embodiments may include: providing a semiconductor device to be tested, the semiconductor device including at least one device cell, the at least one device cell having at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode may be controlled separately from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell.

Abstract: The present application relates to novel substituted dicyanopyridines, to processes for their preparation, to their use for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, preferably for the treatment and/or prophylaxis of cardiovascular disorders.

Abstract: A method for operating a field-effect transistor having a source terminal, a drain terminal, a gate terminal, a drift region and a dielectric region adjoining the drift region, is provided. The method includes: connecting at least one of the drain terminal and the source terminal to a load; applying a sequence of voltage pulses between the gate terminal and the source terminal to repetitively switch the field-effect transistor such that the field-effect transistor is driven in an avalanche mode between the voltage pulses, during the avalanche mode avalanche multiplication occurring in the drift region close to the dielectric region; and applying at least one relaxation pulse to the field-effect transistor to reduce an accumulation of charges in the dielectric region due to hot charge carriers generated in the avalanche mode. Further, a field-effect transistor and a circuit configuration including the field-effect transistor are provided.

Abstract: One embodiment of a semiconductor device includes a dense trench transistor cell array. The dense trench transistor cell array includes a plurality of transistor cells in a semiconductor body. A width w3 of a transistor mesa region of each of the plurality of transistor cells and a width w1 of a first trench of each of the plurality of transistor cells satisfy the following relationship: w3<1.5×w1. The semiconductor device further includes semiconductor diodes. At least one of the semiconductor diodes is arranged between first and second parts of the plurality of transistor cells and includes a diode mesa region adjoining opposing walls of second trenches. A depth d1 of the first trench and a depth d2 of the second trenches differ by at least 20%.

Abstract: A test method in accordance with one or more embodiments may include: providing a semiconductor device to be tested, the semiconductor device including at least one device cell, the at least one device cell having at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode may be controlled separately from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell.

Abstract: The present application relates to novel substituted aryloxazole derivatives, to processes for their preparation, to their use for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, preferably for the treatment and/or prevention of cardiovascular and metabolic disorders.

Abstract: The invention relates to a semiconductor component comprising a semiconductor body, an insulation on the semiconductor body and a cell array arranged at least partly within the semiconductor body. The cell array has at least one p-n junction and at least one contact connection. The insulation is bounded in lateral direction of the semiconductor body by a circumferential diffusion barrier.

Abstract: The invention relates to substituted dihydroquinazolines and to processes for their preparation and also to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for use as antiviral agents, in particular against cytomegalo viruses.

Abstract: The invention relates to substituted dihydroquinazolines and to processes for their preparation and also to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for use as antiviral agents, in particular against cytomegalo viruses.