Abstract: This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

Abstract: A pump apparatus for recovering hydrocarbons from downhole wells, having a seating surface adapted to sealingly engage an interior surface of a circumferential seal member situated within production tubing when said pump is in a downhole operative position. An isolation plug is provided, releasably coupled to a lower end of said pump, having sealing means thereon to sealingly engage said interior surface of said circumferential seal member when the isolation plug is linearly positioned within said circumferential seal member and decoupled from the pump assembly, thereby preventing gases and fluids from fluid communication to surface when the pump is raised and removed from the well. A method for sealing a well upon removal of a pump is further disclosed.

Abstract: An electrophotographic (EP) printer has two toner bottles. Each has a supply volume and a waste volume separated so that toner can pass from the waste volume to the supply volume, and has a status recorder with waste and supply states. An imaging member receives toner from the supply volume of a second toner bottle in a supply receptacle, and an imaging member applies the toner to a receiver to form a print image. A cleaning device removes toner from an imaging members and transporting the removed toner to the waste volume of a first toner bottle in a waste receptacle. A toggle changes the state of the status recorder of the first toner bottle in the waste receptacle to the supply state, so that the waste toner in the waste volume of the first toner bottle is made available to be used as supply toner in the supply receptacle.

Abstract: The present application is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present application is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present application is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present application is a photodiode array aving PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.

Abstract: A nozzle in which an airfoil includes a pressure surface and a suction surface that join at substantially opposing chordal ends of the airfoil to form a leading edge of the airfoil and a trailing edge of the airfoil. A trailing edge passage is defined through the airfoil through which coolant flows. The trailing edge passage is proximate to the trailing edge of the airfoil and has a contoured shape that conforms to that of the trailing edge.

Abstract: The invention relates to a ring installation pistol (1), which is used to automatically install orthodontic rings made of elastic material, which are molded onto a strip (7). By pulling the trigger (2), which is installed in a pistol-shaped housing (3), the working piston (4) is pressed forward. There, the wire fork tips (5), which have been moved toward each other, reach into one of the molded-on rings (6) and remove said ring from the strip of the ring by pulling the ring. At the same time, the magazine (8) moves to the side. The ring separated in such a way is then expanded by the spreading of the forks and pushed off onto a metal lock. When the trigger is returned, a gear (10) in the magazine is actuated by means of a transport lever (9), which gear moves the strip by means of a transport wheel (11) in such a way that the next ring on the strip can be grabbed in the following operation.

Abstract: The present application is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode comprises a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+ region through the wafer and a diffusion of an n+ region through the wafer.

Abstract: The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.

Abstract: The present application is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present application is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present application is fabricated such that the PN junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present application is a photodiode array aving PN junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.

Abstract: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.

Abstract: The present invention is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode comprises a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+ region through the wafer and a diffusion of an n+ region through the wafer.

Abstract: The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

Abstract: A holder (100) for storing prescribed medication doses in a sealed cup (112) is provided with a sealing strip (117) a first portion (110) of which covers the mouth of the cup and a second portion (120) carries a picture of the face of the patient for whom the medication has been prescribed. The holder (100) is provided with a rim (113) extending outwardly from the mouth of the cup and with an extension flange (114) having a flat upper surface (111) which is coplanar with the upper surface of the rim (113). The sealing strip adheres to the coplanar surfaces of the rim (113) and the flange (114) and is provided with lines of severance (130 and 131) extending from a pull-tab (151) and along opposite sides of the cup. These lines of severance (130 and 131) are arranged within the confines of the path of the seal between the sealing strip (117) and the rim (113) so that air cannot leak through the lines of severance and into the cup when storing medication doses within the holder.

Abstract: The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array awing PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.

Abstract: The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark current, low capacitance and improved signal-to-noise ratio characteristics. More specifically, the present invention is a photodiode and/or photodiode array that includes a metal shield for reflecting light back into a scintillator crystal, thus allowing for a relatively small p+ diffused area.

Abstract: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.

Abstract: The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate.

Abstract: The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. In one embodiment, a photodiode array comprises a substrate having at least a front side and a back side, a plurality of diode elements integrally formed in the substrate forming the array, wherein each diode element has a p+ fishbone pattern on the front side, and wherein the p+ fishbone pattern substantially reduces capacitance and crosstalk between adjacent photodiodes, a plurality of front surface cathode and anode contacts, and wire interconnects between diode elements made through a plurality of back surface contacts.

Abstract: The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

Abstract: A power consumption monitoring apparatus, comprising at least one electrical measurement device (210) for generating a signal indicative of the electrical power passing through an electrical power line (300) at the location of the measurement device, and at least one data controller (220) adapted to receive the signal from the measurement device and to convert the signal into a data transmission stream conveying at least one power consumption statistic. The data controller including a transmitter (221) for transmitting the data transmission stream across a communications medium and a display controller (230) including a receiver (231) for receiving the stream from the communications medium, the display controller adapted to convert the stream into one or more data display transmission signals for reception by a variety of display devices (310) to display power consumption statistics.