Abstract: In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a polyester resin component. In a further aspect, coating compositions are provided that contain a resin component obtained by polymerization of a multi-hydroxy compound. Coating compositions of the invention are particularly useful employed in combination with an overcoated photoresist layer to manufacture integrated circuits.

Abstract: The present invention provides novel photoresist compositions that comprise a resin binder, a photoacid generator compound and an added amine component. In a first aspect, the added amine preferably is 1) non-aromatic 2) has from about 9 to about 16 carbon atoms, 3) contains no primary or secondary amine groups, and/or 4) contains no multiple tertiary amine groups where two tertiary groups are separated by a linkage of optionally substituted ethylene. In a related aspect, the added amine is a non-aromatic amine that comprises either 1) a tertiary nitrogen alicyclic ring member, and preferably is at junction position between a bicyclic or other multi-ring ring system; or 2) a tertiary nitrogen that is not a ring member, and is substituted by at least two tertiary or quaternary carbon radicals.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Abstract: Disclosed are spirocyclic olefin ploymers, methods of preparing spirocyclic olefin polymers, photoresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: Antireflective compositions are provided that contain an ionic thermal acid generator material. Use of such a thermal acid generator material can significantly increase the shelf life of solutions of antireflective compositions in protic media. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Abstract: Disclosed are spirocyclic olefin polymers, methods of preparing spirocyclic olefin polymers, photoresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: Disclosed are spirocyclic olefin polymers, methods of preparing spirocyclic olefin polymers, photoresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: Disclosed are spirocyclic olefin ploymers, methods of preparing spirocyclic olefin polymers, photoresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: Disclosed are compositions and methods for providing substantially planarized surfaces in the manufacture of electronic devices. Also disclosed are compositions and methods for protecting apertures in the manufacture of electronic devices.

Abstract: Disclosed are compositions and methods for providing substantially planarized surfaces in the manufacture of electronic devices. Also disclosed are compositions and methods for protecting apertures in the manufacture of electronic devices.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Abstract: Disclosed are polymers including as polymerized units one or more spirocyclic olefin monomer of the formulae I or Ia wherein A=CH2; G=C(Z′), O, and NR2; R2=H, (C1-C8)alkyl or substituted (C1-C8)alkyl; E and W are independently selected from C(Z′), O and a chemical bond; Z′=O; n=1; m=1; m′=0; 1=0 to 5; and p=0 to 5; provided that when both E and W are C(Z′), G is NR2; wherein T and L are taken together to form a double bond. These polymers are useful in photoresist compositions. Methods of making and using these polymers are also disclosed.

Abstract: A system and method is provided for configuring equipment to achieve a desired result and includes a simulation engine for receiving the desired result and outputting at least one parameter setting for operating the equipment to achieve the desired result. Also included is a consumable knowledge base for receiving the at least one parameter setting and outputting a consumable selection for use in the equipment to achieve the desired result.

Abstract: This invention relates to resins and photoresist compositions that comprise such resins. Preferred polymers of the invention comprise adjacent saturated carbon atoms, either integral or pendant to the polymer backbone, that have a substantially gauche conformation. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications, polymers of the invention that have a population of dihedral angles of adjacent saturated carbon atoms that are enriched in substantially gauche conformations can provide reduced undesired absorbance of the high energy exposure radiation.

Abstract: The present invention provides novel polymers and photoresist compositions that comprise the polymers as a resin binder component. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to short wavelengths, including 193 nm and 248 nm. The resists of the invention are also useful or imaging at other wavelengths such as 365 nm. Polymers of the invention include those that comprise a photogenerated acid-labile unit that is ester group that comprises an alkyl moiety having about 5 or more carbon atoms and at least two secondary, tertiary or quaternary carbon atoms. The alkyl moiety of the ester group can be a noncyclic or single ring alicyclic group. The carboxyl (C═O(O)) oxygen of the ester group is often preferably directly bonded to a quaternary carbon atom.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm, particularly 157 nm. Preferred polymers and photoresists include acid labile acetal or ketal groups that help degrade the polymer by hydrolysis. More preferred polymers include at least one electronegative group that reduces or avoids 157 nm absorbance of a wide spectrum of organic groups including aromatic groups such as phenolic moieties.

Abstract: Antireflective compositions are provided that contain a basic additive material. Such use of a basic material can significantly decrease or even completely eliminate notching of an overcoated photoresist relief image. Antireflective formulations of the invention are preferably crosslinking compositions and may contain a resin component in addition to the basic additive. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of non-ionic and ionic PAGS. Preferred resists of the invention preferably are imaged with 248 nm and/or 193 nm exposure wavelengths to provide highly resolved small dimension features.