Abstract: Provided is a burner arrangement for producing synthesis gas by non-catalytic or catalytic partial oxidation of fluid or fluidized carbon-containing fuels in the presence of an oxidant and a moderator, including following assemblies: (a) a feeding means for separately feeding three fluid reaction media streams or two fluid and one fluidized reaction media stream into a burner, (b) at least one burner, (c) outer wall of the at least one burner is fluid-tightly connected to a burner mounting plate, (d) a reaction chamber, (e) the at least one burner is insertable into the reaction chamber, and (f) outer wall of the at least one burner and the side of the at least one burner mounting plate facing away from the interior of the reaction chamber are designed to allow cooling by indirect heat exchange with a cooling fluid.

Abstract: The present invention specifies a process and a plant for simultaneous production of methanol and pure carbon monoxide which includes synthesis gas production by partial oxidation of an input stream containing hydrocarbons and subsequent methanol synthesis. According to the invention carbon dioxide is separated from the raw synthesis gas using a sorption apparatus and at least partially introduced into the input gas for the methanol synthesis reactor.

Abstract: The present invention relates to a reactor and a process for producing a product gas by gasification of a hydrocarbon-containing fuel. The reactor has a reaction space and a cooling space and an intermediate floor which spatially separates the reaction space from the cooling space. A gas duct for ducting the product gas to be cooled from the reaction space into the cooling space extends through the intermediate floor, including a shaped body which at least partially extends over a free cross sectional area of the cooling space and effects partial blocking of the cross sectional area of the cooling space is arranged in the cooling space of the reactor, wherein the shaped body is arranged such that after flowing around the shaped body at least a portion of the cooled product gas subsequently exits the reactor via the cool gas outlet of the cooling space.

Abstract: A smartphone may be freely moved in three dimensions as it captures a stream of images of an object. Multiple image frames may be captured in different orientations and distances from the object and combined into a composite image representing an image of the object. The image frames may be formed into the composite image based on representing features of each image frame as a set of points in a three dimensional point cloud. Inconsistencies between the image frames may be adjusted when projecting respective points in the point cloud into the composite image. Quality of the image frames may be improved by processing the image frames to correct errors. Distracting features, such as the finger of a user holding the object being scanned, can be replaced with background content. As the scan progresses, a direction for capturing subsequent image frames is provided to a user as a real-time feedback.

Abstract: A smartphone may be freely moved in three dimensions as it captures a stream of images of an object. Multiple image frames may be captured in different orientations and distances from the object and combined into a composite image representing an image of the object. The image frames may be formed into the composite image based on representing features of each image frame as a set of points in a three dimensional point cloud. Inconsistencies between the image frames may be adjusted when projecting respective points in the point cloud into the composite image. Quality of the image frames may be improved by processing the image frames to correct errors. Distracting features, such as the finger of a user holding the object being scanned, can be replaced with background content. As the scan progresses, a direction for capturing subsequent image frames is provided to a user as a real-time feedback.

Abstract: A smartphone may be freely moved in three dimensions as it captures a stream of images of an object. Multiple image frames may be captured in different orientations and distances from the object and combined into a composite image representing an image of the object. The image frames may be formed into the composite image based on representing features of each image frame as a set of points in a three dimensional point cloud. Inconsistencies between the image frames may be adjusted when projecting respective points in the point cloud into the composite image. Quality of the image frames may be improved by processing the image frames to correct errors. Distracting features, such as the finger of a user holding the object being scanned, can be replaced with background content. As the scan progresses, a direction for capturing subsequent image frames is provided to a user as a real-time feedback.

Abstract: A smartphone may be freely moved in three dimensions as it captures a stream of images of an object. Multiple image frames may be captured in different orientations and distances from the object and combined into a composite image representing an image of the object. The image frames may be formed into the composite image based on representing features of each image frame as a set of points in a three dimensional point cloud. Inconsistencies between the image frames may be adjusted when projecting respective points in the point cloud into the composite image. Quality of the image frames may be improved by processing the image frames to correct errors. Distracting features, such as the finger of a user holding the object being scanned, can be replaced with background content. As the scan progresses, a direction for capturing subsequent image frames is provided to a user as a real-time feedback.

Abstract: A smartphone may be freely moved in three dimensions as it captures a stream of images of an object. Multiple image frames may be captured in different orientations and distances from the object and combined into a composite image representing an image of the object. The image frames may be formed into the composite image based on representing features of each image frame as a set of points in a three dimensional point cloud. Inconsistencies between the image frames may be adjusted when projecting respective points in the point cloud into the composite image. Quality of the image frames may be improved by processing the image frames to correct errors. Distracting features, such as the finger of a user holding the object being scanned, can be replaced with background content. As the scan progresses, a direction for capturing subsequent image frames is provided to a user as a real-time feedback.

Abstract: A port arrangement is configured for accessing a demountable component in an interior of an apparatus or container. The port arrangement includes an inner port having a port tube and forming a releasable connection with an internal component. The port tube of the inner port is guided through an outer port that is to an outer jacket.

Abstract: A port arrangement is configured for accessing a demountable component in an interior of an apparatus or container. The port arrangement includes an inner port having a port tube and forming a releasable connection with an internal component. The port tube of the inner port is guided through an outer port that is to an outer jacket.

Abstract: A method of filling gaps between adjacent gate electrodes of a semiconductor structure. A self-planarizing material is deposited over the structure. A first portion of such material flow between the gate electrode to fill the gaps and a second portion of such material becomes deposited over tops of the gate electrodes and over the gaps to form a layer with a substantially planar surface. A phosphorous dopant is formed in the second portion of the self-planarizing material. Thus, relatively small gaps may be filled effectively with a layer having a very planar surface for subsequent photolithography. The phosphorous dopant provides gettering to remove adverse effects of alkali contaminant ions which may enter the gap filling material. The dielectric constant of the material filing the gaps, i.e., the first portion of the gap filling material, being substantially free of such contaminants, has a relatively low dielectric constant thereby reducing electrical coupling between adjacent electrodes.

Abstract: A wafer processing apparatus includes a processing chamber, a chuck arranged in the processing chamber for supporting a wafer, and a pedestal which is spaced apart from the chuck. A first gas layer is provided between the chuck and the wafer and a second gas layer is provided in the space between the pedestal and the chuck. The pressure of the first gas layer is controlled to be in a pressure range in which a thermal conductivity of the first gas layer is substantially constant with respect to changes in pressure of the first gas layer and the pressure of the second gas layer is controlled so as to control an amount of heat transferred to/from the pedestal.

Abstract: A wafer processing apparatus includes a processing chamber, a chuck arranged in the processing chamber for supporting a wafer, and a pedestal which is spaced apart from the chuck. A first gas layer is provided between the chuck and the wafer and a second gas layer is provided in the space between the pedestal and the chuck. The pressure of the first gas layer is controlled to be in a pressure range in which a thermal conductivity of the first gas layer is substantially constant with respect to changes in pressure of the first gas layer and the pressure of the second gas layer is controlled so as to control an amount of heat transferred to/from the pedestal.

Abstract: A vertically arranged fuse structure for a semiconductor device. A fuse stud is vertically arranged with respect to a major plane of the semiconductor device and adjacent and electrically connected to overlying electrically conducting material and underlying electrically conducting material. A fuse void is present in the vertically arranged fuse stud. In an unblown state, the fuse provides electrical connection between the overlying electrically conducting material and the underlying electrically conducting material. The electrical connection being breakable by passing electrical energy of a predetermined level through the fuse.

Abstract: A method for fabricating a shallow trench isolation structure involves several steps. The steps of an illustrative method include forming a first resist pattern on a substrate, etching the substrate to form a shallow trench therein using the first resist pattern as a mask, removing the first resist pattern from the substrate, depositing an oxide layer on the substrate including in the shallow trench, depositing a polish stop layer on the oxide layer, forming a second resist pattern on a portion of the polish stop layer substantially covering the shallow trench using the same mask as the mask for the first resist pattern, etching the polish stop layer, removing the second resist pattern leaving the portion of the polish stop layer substantially covering the shallow trench, polishing the oxide layer using the portion of the polish stop layer substantially covering the shallow trench as a polish stop, and removing the portion of the polish stop layer substantially covering the shallow trench.

Abstract: A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the steps of providing a semiconductor wafer including a dielectric layer formed on the wafer, the dielectric layer having vias formed therein and placing the wafer in a deposition chamber. The method further includes depositing a metal on the wafer to fill the vias wherein the metal depositing is initiated when the wafer is at a first temperature and the depositing is continued while heating the wafer to a target temperature which is greater than the first temperature.

Abstract: A multi-level integrated circuit metalization system having a composite dielectric layer comprising a layer 22 of diamond or sapphire. A plurality of patterned metalization layers is disposed over a semiconductor substrate 10. A composite dielectric layer is disposed between a pair of the metalization layers. The composite dielectric layer 22 comprises a layer of diamond or sapphire. The diamond or sapphire layer has disposed on a surface thereof one of the patterned metalization layers. A conductive via 34 passes through the composite layer. One end of the conductive via is in contact with diamond or sapphire layer. The diamond or sapphire layer conducts heat laterally along from the metalization layer disposed thereon to a heat sink provided by the conductive via. The patterned diamond or sapphire layer provides a mask during the second metalization deposition.

Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material.

Abstract: Apparatus and method are provided for obtaining improved measurement and control of the temperature of a semiconductor wafer (W) during processing. The apparatus includes a chuck for holding a wafer during processing, a coolant gas supply (16), and a temperature sensing arrangement for measuring and controlling the temperature of the wafer during processing. A top face of the chuck (22) over which the wafer is positioned, is configured with a plurality of holes (34) into which the coolant gas, such as helium, is admitted at controlled rate and pressure. The coolant gas passes through a narrow space (36) between the top face of the chuck and the underside of the wafer and is evacuated via an exhaust line (30) after being heated to (or nearly to) the temperature of the wafer. Temperature of the now-heated coolant gas is continuously measured by a temperature sensor arrangement which generates a signal controlling the pressure and flow of coolant gas to the wafer.

Abstract: A method for forming a multi-level conductive structure on an integrated circuit. The method includes forming a first conductive layer 108 and forming a first dielectric layer 112 above the first conductive layer. The method further includes forming a second conductive layer 302 above the first dielectric layer. There is also included etching through the second conductive layer and at least partially into the first dielectric layer to form a trench 706 in the second conductive layer and the first dielectric layer, thereby removing at least a portion of the dielectric layer and forming a first conductive line 503 and a second conductive line 505 in the second conductive layer. Further, the method includes depositing a low capacitance material 908 into the trench. The low capacitance material represents a material having a dielectric constant lower than a dielectric constant of the first dielectric layer.