Abstract: In an example, an integrated circuit structure includes a first vertical stack of horizontal nanowires laterally spaced apart from a second vertical stack of horizontal nanowires. An epitaxial source or drain structure is between the first and second vertical stacks of horizontal nanowires. The epitaxial source or drain structure includes a nucleation layer having a first portion in contact with the first vertical stack of horizontal nanowires and a second portion in contact with the second vertical stack of horizontal nanowires. The nucleation layer includes silicon with arsenic dopants. The epitaxial source or drain structure also includes an epitaxial fill layer laterally between the first and second portions of the nucleation layer. The epitaxial fill layer includes silicon with phosphorous dopants. The epitaxial fill layer has a total atomic concentration of arsenic less than half of a total atomic concentration of arsenic of the nucleation layer.

Abstract: A dopant may included in one or more sacrificial layers, e.g., silicon layers or silicon germanium layers, used for forming nanoribbon transistors. Adding a dopant to a silicon germanium layer may cause the silicon germanium to be more stress neutral, to prevent relaxation after etching stacks of individuated nanoribbons. Alternatively, when added to one or more sacrificial layers of silicon, the doped silicon layers may counteract elastic stress from the silicon germanium layers. The dopant layers may be included at various positions in a stack of materials. The dopant layer may include one or more dopants selected from carbon, arsenic, boron, and phosphorus.

Abstract: Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The epitaxial structures of the first and second source or drain structures have a vertical trench centered therein. The first and second source or drain structures include silicon and a Group V dopant impurity.

Abstract: III-N e-mode high electron mobility transistors (HEMTs) including a dopant diffusion spacer between an impurity-doped III-N material layer and a III-N polarization layer of the HEMT material stack. The spacer may be a substantially undoped III-N material, such as GaN. With the diffusion spacer, P-type impurities within the pGaN are setback from the polarization layer sufficiently to avoid significant levels of P-type impurities from entering the III-N material interface where the 2DEG resides. With the diffusion spacer, clustering of impurities near the 2DEG may be avoided and a III-N e-mode HEMT may achieve higher drive currents.

Abstract: Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The epitaxial structures of the first and second source or drain structures have a vertical trench centered therein. The first and second source or drain structures include silicon and a Group V dopant impurity.

Abstract: Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The epitaxial structures of the first and second source or drain structures have a vertical trench centered therein. The first and second source or drain structures include silicon and a Group V dopant impurity.

Abstract: In an example, an integrated circuit structure includes a first vertical stack of horizontal nanowires laterally spaced apart from a second vertical stack of horizontal nanowires. An epitaxial source or drain structure is between the first and second vertical stacks of horizontal nanowires. The epitaxial source or drain structure includes a nucleation layer having a first portion in contact with the first vertical stack of horizontal nanowires and a second portion in contact with the second vertical stack of horizontal nanowires. The nucleation layer includes silicon with arsenic dopants. The epitaxial source or drain structure also includes an epitaxial fill layer laterally between the first and second portions of the nucleation layer. The epitaxial fill layer includes silicon with phosphorous dopants. The epitaxial fill layer has a total atomic concentration of arsenic less than half of a total atomic concentration of arsenic of the nucleation layer.

Abstract: A downhole borehole imaging tool and methods for determining a borehole size includes a magnetoresistive system and a hub moveably coupled to a fixed tool string. The hub includes a magnet. The magnetoresistive system includes magnetoresistive sensors disposed within the fixed tool string and segregated from the magnet. During operation, a routine scan of all sensors measures, for example, the output voltage V, angle ? of magnetic field, and temperature. Measurements from each sensor may then be characterized to account for temperature and input voltages variation of the sensors. The most accurate measurement can be used to derive the position of the hub 44 using the previous baseline parameters stored in the tool.

Abstract: III-N e-mode high electron mobility transistors (HEMTs) including a dopant diffusion spacer between an impurity-doped III-N material layer and a III-N polarization layer of the HEMT material stack. The spacer may be a substantially undoped III-N material, such as GaN. With the diffusion spacer, P-type impurities within the pGaN are setback from the polarization layer sufficiently to avoid significant levels of P-type impurities from entering the III-N material interface where the 2DEG resides. With the diffusion spacer, clustering of impurities near the 2DEG may be avoided and a III-N e-mode HEMT may achieve higher drive currents.

Abstract: A downhole borehole imaging tool and methods for determining a borehole size includes a magnetoresistive system and a hub moveably coupled to a fixed tool string. The hub includes a magnet. The magnetoresistive system includes magnetoresistive sensors disposed within the fixed tool string and segregated from the magnet. During operation, a routine scan of all sensors measures, for example, the output voltage V, angle ? of magnetic field, and temperature. Measurements from each sensor may then be characterized to account for temperature and input voltages variation of the sensors. The most accurate measurement can be used to derive the position of the hub 44 using the previous baseline parameters stored in the tool.

Abstract: Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The epitaxial structures of the first and second source or drain structures have a vertical trench centered therein. The first and second source or drain structures include silicon and a Group V dopant impurity.

Abstract: An imaging tool that includes an array of pads. The array of pads are in communication with a hot terminal of a single phase electrical alternating current power source in communication with the array of pads. The single phase electrical alternating current power source includes two return electrodes. One of the return electrodes is located above the array of pads, and the other return terminal is located below the array of pads.

Abstract: A downhole tool includes a logging tool. The logging tool includes a spring integral with a sensor. The spring applies the sensor to a formation wall. Additionally, the spring includes a groove formed along a neutral axis thereof. In addition, a wire is located within the groove and is operatively connected with the sensor and at least one other component of the logging tool.

Abstract: A method for determining a depth related parameter of an instrument in a wellbore includes measuring movement of the instrument along the wellbore using a wheel sensor urged into contact with a wall of the wellbore. Movement of an instrument conveyance is measured proximate the surface. Measurements from the wheel sensor are calibrated using measurements of movement of the instrument conveyance. The depth related parameter of the instrument is determined using the calibrated wheel sensor measurements.

Abstract: An imaging tool that includes an array of pads. The array of pads are in communication with a hot terminal of a single phase electrical alternating current power source in communication with the array of pads. The single phase electrical alternating current power source includes two return electrodes. One of the return electrodes is located above the array of pads, and the other return terminal is located below the array of pads.

Abstract: A downhole tool includes a logging tool. The logging tool includes a spring integral with a sensor. The spring applies the sensor to a formation wall. Additionally, the spring includes a groove formed along a neutral axis thereof. In addition, a wire is located within the groove and is operatively connected with the sensor and at least one other component of the logging tool.

Abstract: A downhole tool includes a position system. The position system includes a hub moveably coupled to a fixed tool string. The hub includes a sensor component. The position system also includes a position sensor disposed within the fixed tool string and segregated from the sensor component. Additionally, the sensor component is at a first pressure and the position sensor is at a second pressure, different than the first pressure.

Abstract: Many tools and other items include a shaft. A restraining device is disclosed for restraining such an item when the item is not in use. In one embodiment, the restraining device includes at least one of: (i) a thumb-receiving surface for receiving a force by a thumb to pivot an arm open; and (ii) a finger-receiving surface for receiving a force by at least one finger to pivot the arm open. The restraining device may be used in restraining a reaching device in a rural mail carrier's vehicle. An apparatus is therefore also disclosed that, in one embodiment, includes a supporting body securable to a vehicle seat. The supporting body supports a tray for holding mail. The restraining device is connected to the supporting body.

Abstract: A hang-off tool for supporting a tool inside a tubular member includes a logging string configured to generate logging data, a computing system coupled to the logging string and configured to communicate the logging data to another tool, and a radially expandable member having a retracted position and an expanded position. The radially expandable member is configured to engage a radially-increased profile of an inner surface of the tubular member in the expanded position to support the hang-off tool. The radially expandable member is also configured not to engage the radially-increased profile in the retracted position.

Abstract: A hang-off tool for supporting a tool inside a tubular member includes a logging string configured to generate logging data, a computing system coupled to the logging string and configured to communicate the logging data to another tool, and a radially expandable member having a retracted position and an expanded position. The radially expandable member is configured to engage a radially-increased profile of an inner surface of the tubular member in the expanded position to support the hang-off tool. The radially expandable member is also configured not to engage the radially-increased profile in the retracted position.