Abstract: A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.

Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.

Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x?1.