Abstract: A vessel includes a memory and a processor operatively coupled to the memory. The memory is configured to store a vessel identifier. The processor is configured to initiate a timer for a shelf life of a solution placed into the vessel. The processor is also configured to conduct a measurement of the solution using one or more sensors in the vessel. The processor is also configured to compare the measurement to a threshold for the solution. The processor is further configured to activate a solution indicator to indicate that the solution should be discarded responsive to a determination that the shelf life has expired or a determination that the measurement exceeds the threshold.

Abstract: A vessel includes a memory and a processor operatively coupled to the memory. The memory is configured to store a vessel identifier. The processor is configured to initiate a timer for a shelf life of a solution placed into the vessel. The processor is also configured to conduct a measurement of the solution using one or more sensors in the vessel. The processor is also configured to compare the measurement to a threshold for the solution. The processor is further configured to activate a solution indicator to indicate that the solution should be discarded responsive to a determination that the shelf life has expired or a determination that the measurement exceeds the threshold.

Abstract: A neutralization cell is provided which may be used to increase a pH level of a chlorine solution. The neutralization cell includes a neutralization anode, a neutralization cathode, an inlet, and an outlet. The neutralization anode and the neutralization cathode are positioned to divide the neutralization cell into a middle area between the neutralization anode and the neutralization cathode, an anode area on a side of the neutralization anode furthest from the neutralization cathode, and a cathode area on a side of the neutralization cathode furthest from the neutralization anode. The inlet directs the chlorine solution into the neutralization cell by directing an incoming flow of the chlorine solution into the anode area. The outlet directs the chlorine solution out of the neutralization cell by directing an outgoing flow of the chlorine solution from the cathode area.

Abstract: A neutralization cell is provided which may be used to increase a pH level of a chlorine solution. The neutralization cell includes a neutralization anode, a neutralization cathode, an inlet, and an outlet. The neutralization anode and the neutralization cathode are positioned to divide the neutralization cell into a middle area between the neutralization anode and the neutralization cathode, an anode area on a side of the neutralization anode furthest from the neutralization cathode, and a cathode area on a side of the neutralization cathode furthest from the neutralization anode. The inlet directs the chlorine solution into the neutralization cell by directing an incoming flow of the chlorine solution into the anode area. The outlet directs the chlorine solution out of the neutralization cell by directing an outgoing flow of the chlorine solution from the cathode area.

Abstract: An interconnector system (10) for coupling a first hollow body to a second hollow body allows fluid communication between the hollow bodies. The interconnector system (10) includes a valve interconnector (14) and a receiver interconnector (12). The receiver interconnector (12) has a sliding seal sleeve (20) that slides relative to a hollow post (18). The design of the receiver interconnector (12) ensures that the valve interconnector (14) cannot be decoupled from the receiver interconnector (12) without the seal sleeve (12) sealing closed the liquid passageway (46) through the hollow post (18). Also included is a hollow body having a coupling device thereon.

Abstract: A neutralization cell is provided which may be used to increase a pH level of a chlorine solution. The neutralization cell includes a neutralization anode, a neutralization cathode, an inlet, and an outlet. The neutralization anode and the neutralization cathode are positioned to divide the neutralization cell into a middle area between the neutralization anode and the neutralization cathode, an anode area on a side of the neutralization anode furthest from the neutralization cathode, and a cathode area on a side of the neutralization cathode furthest from the neutralization anode. The inlet directs the chlorine solution into the neutralization cell by directing an incoming flow of the chlorine solution into the anode area. The outlet directs the chlorine solution out of the neutralization cell by directing an outgoing flow of the chlorine solution from the cathode area.

Abstract: A magnetic sensor that utilizes Rashba effect to generate spin polarization. The sensor eliminates the need for a pinned layer structure and therefore, greatly reduces the gap thickness of the sensor allowing for greatly improved data density. The sensor includes a two dimensional conductor adjacent to a magnetic free layer, that can also be separated from the free layer by a non-magnetic, electrically insulating barrier layer and that can also be constructed with or without side shields. A current flow through the two-dimensional conductor in a direction parallel with the air bearing surface causes a spin polarization oriented perpendicular to the air bearing surface. The voltage output of the sensor changes with changing magnetization direction of the free layer relative to spin polarization in the two dimensional conductor.

Abstract: A system, according to one embodiment, includes a magnetic head having sensor structures disposed laterally along a cross-track direction, each sensor structure having a free layer, a soft bias layer positioned laterally to each sensor structure, an antiparallel coupling layer above each soft bias layer, a magnetic layer above each antiparallel coupling layer, wherein magnetic moments of the soft bias layer and the magnetic layer are antiparallel coupled, and a stabilizing layer above each magnetic layer for stabilizing a magnetic orientation of the magnetic layer. Moreover, opposing faces of the magnetic layers are positioned apart by a distance that causes each magnetic layer to form a magnetic circuit with the associated free layer and the associated soft bias layer.

Abstract: The embodiments disclosed generally relate to a read head in a magnetic recording head. The read head utilizes a spin Hall effect layer disposed on the free magnetic layer. Electrical bias is applied to the top shield, or lead layer, longitudinally so that the current is longitudinally driven through the spin Hall effect layer. The spin Hall effect layer may comprise Pt, Ta, W, copper doped with either bismuth or iridium, a noble metal having group 5d non-magnetic impurities, or combinations thereof. The spin Hall effect layer, together with the longitudinally applied bias, reduces the damping in the free magnetic layer and hence, reduces the thermal magnetic noise of the read head.

Abstract: A scissor type magnetic sensor having a back edge bias structure that has a non-uniform magnetic moment to compensate for differences in magnetic spacing between the bias structure and a first magnetic free layer as compared with the magnetic spacing between the bias structure and a second magnetic free layer. The magnetic bias structure can include a first magnetic layer and a second magnetic layer formed over the first magnetic layer, with the first magnetic layer having a higher magnetic moment than the second magnetic layer.

Abstract: In one embodiment, a system includes a magnetic head having a write portion having a main pole, a near field transducer comprising a conductive metal film having outer regions extending from an active region, and an optical waveguide for illumination of the near field transducer, wherein the conductive metal film extends in a cross track direction for a width at least 200% greater than a width of the active region of the conductive metal film, wherein a portion of the main pole extends along the conductive metal film in a cross track direction for a width at least 200% greater than the width of the active region of the conductive metal film.

Abstract: A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.

Abstract: A magnetic sensor utilizing the spin Hall effect to polarize electrons for use in measuring a magnetic field. The sensor eliminates the need for a pinned layer structure or antiferromagnetic layer (AFM layer), thereby reducing gap thickness for increased data density. The sensor includes a non-magnetic, electrically conductive layer that is configured to accumulate electrons predominantly of one spin at a side thereof when a current flows there-through. A magnetic free layer is located adjacent to the side of the non-magnetic, electrically conductive layer. A change in the direction of magnetization in the free layer relative to the orientation of the spin polarized electrons causes a change in voltage output of the sensor.

Abstract: A scissor type magnetic sensor having a soft magnetic side shields for improved sensor stability. The soft magnetic side shield structure extends from the side of the sensor and although being constructed of a low coercivity soft magnetic material it has a shape the causes the magnetization of the side shield layer to remain oriented in a desired direction parallel to the media facing surface. The side shields include first and second magnetic layers with an antiparallel coupling layer sandwiched between them. Each of the magnetic layers of the side shield structure has a width measured perpendicular to the media facing surface and a thickness measured perpendicular to the width and parallel with the media facing surface, both the width and the thickness being less than 10 times an intrinsic exchange length of the magnetic layer.

Abstract: A scissor type magnetic sensor having an improved back edge bias structure. The back edge bias structure extends beyond the sides of the sensor stack for improved bias moment and is formed on a flat topography that provide for improved magnetic biasing. The sensor is formed by a method that includes first defining a sensor width and then depositing a multi-layer insulation layer that includes a dielectric layer that is resistant to ion milling and the depositing a fill layer over the dielectric layer that is removable by ion milling. After the multi-layer insulation layer has been deposited the back edge (i.e. stripe height) of the sensor is formed by masking and ion milling. This ion milling removes portions of the non-magnetic, electrically insulating fill layer that extend beyond the stripe height and beyond the sides of the sensor, leaving the dielectric layer there-beneath.

Abstract: A scissor type magnetic sensor having a back edge bias structure that has a non-uniform magnetic moment to compensate for differences in magnetic spacing between the bias structure and a first magnetic free layer as compared with the magnetic spacing between the bias structure and a second magnetic free layer. The magnetic bias structure can include a first magnetic layer and a second magnetic layer formed over the first magnetic layer, with the first magnetic layer having a higher magnetic moment than the second magnetic layer.

Abstract: The invention relates to a self-contained and wireless monitoring device (10) for use in a washing machine (1) to indicate shortage of detergent in said washing machine. The monitoring device comprises a sensor (13) arranged to monitor detergent concentration in washing liquid (5) of said washing machine and to provide an alarm signal (A) when said monitored detergent concentration is below a target value. The monitoring device is capable of floating in said washing liquid and comprises signalling means (11) for indicating said shortage of detergent in response to said alarm signal. The invention further relates to a package containing such a monitoring device and a method for indicating shortage of detergent.

Abstract: A scissor type magnetic sensor having a soft magnetic bias structure located at a back edge of the sensor stack. The sensor stack includes first and second magnetic free layers that are anti-parallel coupled across a non-magnetic layer sandwiched there-between. The soft magnetic bias structure has a length as measured perpendicular to the air bearing surface that is greater than its width as measured parallel with the air bearing surface. This shape allows the soft magnetic bias structure to have a magnetization that is maintained in a direction perpendicular to the air bearing surface and which allows the bias structure to maintain a magnetic bias field for biasing the free layers of the sensor stack.

Abstract: In one embodiment, a system includes a magnetic head having a write portion having a main pole, a near field transducer comprising a conductive metal film having outer regions extending from an active region, and an optical waveguide for illumination of the near field transducer, wherein the conductive metal film extends in a cross track direction for a width at least 200% greater than a width of the active region of the conductive metal film, wherein a portion of the main pole extends along the conductive metal film in a cross track direction for a width at least 200% greater than the width of the active region of the conductive metal film.

Abstract: A magnetic sensor utilizing the spin Hall effect to polarize electrons for use in measuring a magnetic field. The sensor eliminates the need for a pinned layer structure or antiferromagnetic layer (AFM layer), thereby reducing gap thickness for increased data density. The sensor includes a non-magnetic, electrically conductive layer that is configured to accumulate electrons predominantly of one spin at a side thereof when a current flows there-through. A magnetic free layer is located adjacent to the side of the non-magnetic, electrically conductive layer. A change in the direction of magnetization in the free layer relative to the orientation of the spin polarized electrons causes a change in voltage output of the sensor.