Patents by Inventor Philip A. Kraus
Philip A. Kraus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120210Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.Type: ApplicationFiled: October 11, 2022Publication date: April 11, 2024Applicant: Applied Materials, Inc.Inventors: Mikhail Korolik, Paul E. Gee, Wei Ying Doreen Yong, Tuck Foong Koh, John Sudijono, Philip A. Kraus, Thai Cheng Chua
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Patent number: 11946140Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.Type: GrantFiled: March 26, 2021Date of Patent: April 2, 2024Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, Seyyed Abdolreza Fazeli, Yang Guo, Ramcharan Sundar, Arun Kumar Kotrappa, Steven Mosbrucker, Steven D. Marcus, Xinhai Han, Kesong Hu, Tianyang Li, Philip A. Kraus
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Publication number: 20230395356Abstract: A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.Type: ApplicationFiled: June 7, 2022Publication date: December 7, 2023Inventors: Anantha Subramani, Yang Guo, Seyyed Fazeli, Kelvin Chan, Chandrashekara Baginagere, Brian Alvarez, Philip Kraus
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Patent number: 11823870Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.Type: GrantFiled: August 11, 2020Date of Patent: November 21, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Hanhong Chen, Arkaprava Dan, Joseph AuBuchon, Kyoung Ha Kim, Philip A. Kraus
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Publication number: 20230352264Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a negative jump voltage to an electrode of a process chamber to set a wafer voltage for a wafer, modulating an amplitude of the wafer voltage to produce a train of groups of pulse bursts with different amplitudes, and repeating the modulating of the amplitude of the wafer voltage to repeat the train of the groups of pulse bursts to create an ion energy distribution function having more than one energy peak. In some embodiments, the negative jump voltage can include a single-cycle voltage waveform with a voltage ramp during an ion-current phase, in which the voltage ramp can be positive or negative and a duration of the ion-current phase can comprise more or less than fifty percent of a period of the waveform.Type: ApplicationFiled: July 11, 2023Publication date: November 2, 2023Applicant: Applied Materials, Inc.Inventors: Leonid DORF, Travis KOH, Olivier LUERE, Olivier JOUBERT, Philip A. KRAUS, Rajinder DHINDSA, James ROGERS
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Publication number: 20230345137Abstract: Embodiments disclosed herein include a diagnostic substrate, comprising a baseplate, and a first plurality of image sensors on the baseplate, where the first plurality of image sensors are oriented horizontal to the baseplate. In an embodiment, the diagnostic substrate further comprises a second plurality of image sensors on the baseplate, where the second plurality of image sensors are oriented at a non-orthogonal angle to the baseplate. In an embodiment, the diagnostic substrate further comprises a printed circuit board (PCB) on the baseplate, and a controller on the baseplate, where the controller is communicatively coupled to the first plurality of image sensors and the second plurality of image sensors by the PCB. In an embodiment, the diagnostic substrate further comprises a diffuser lid over the baseplate, the PCB, and the controller.Type: ApplicationFiled: June 26, 2023Publication date: October 26, 2023Inventors: Upendra Ummethala, Philip Kraus, Keith Berding, Blake Erickson, Patrick Tae, Devendra Channappa Holeyannavar, Shivaraj Manjunath Nara, Anandakumar Parameshwarappa, Sivasankar Nagarajan, Dhirendra Kumar
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Patent number: 11776805Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.Type: GrantFiled: March 10, 2021Date of Patent: October 3, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Bencherki Mebarki, Joung Joo Lee, Yi Xu, Yu Lei, Xianmin Tang, Kelvin Chan, Alexander Jansen, Philip A. Kraus
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Patent number: 11736818Abstract: Embodiments disclosed herein include a diagnostic substrate, comprising a baseplate, and a first plurality of image sensors on the baseplate, where the first plurality of image sensors are oriented horizontal to the baseplate. In an embodiment, the diagnostic substrate further comprises a second plurality of image sensors on the baseplate, where the second plurality of image sensors are oriented at a non-orthogonal angle to the baseplate. In an embodiment, the diagnostic substrate further comprises a printed circuit board (PCB) on the baseplate, and a controller on the baseplate, where the controller is communicatively coupled to the first plurality of image sensors and the second plurality of image sensors by the PCB. In an embodiment, the diagnostic substrate further comprises a diffuser lid over the baseplate, the PCB, and the controller.Type: GrantFiled: February 9, 2022Date of Patent: August 22, 2023Assignee: Applied Materials, Inc.Inventors: Upendra Ummethala, Philip Kraus, Keith Berding, Blake Erickson, Patrick Tae, Devendra Channappa Holeyannavar, Shivaraj Manjunath Nara, Anandakumar Parameshwarappa, Sivasankar Nagarajan, Dhirendra Kumar
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Patent number: 11728124Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.Type: GrantFiled: July 16, 2021Date of Patent: August 15, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Leonid Dorf, Travis Koh, Olivier Luere, Olivier Joubert, Philip A. Kraus, Rajinder Dhindsa, James Rogers
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Publication number: 20230253186Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.Type: ApplicationFiled: April 11, 2023Publication date: August 10, 2023Applicant: APPLIED MATERIALS, INC.Inventors: Hanhong CHEN, Arkaprava DAN, Joseph AUBUCHON, Kyoung Ha KIM, Philip A. KRAUS
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Publication number: 20230230830Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.Type: ApplicationFiled: March 23, 2023Publication date: July 20, 2023Applicant: Applied Materials, Inc.Inventors: Hanhong Chen, Philip A. Kraus, Joseph AuBuchon
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Publication number: 20230199992Abstract: A method includes establishing, by a diagnostic disc, a secure wireless connection with a computing system using a wireless communication circuit of the diagnostic disc before or after the diagnostic disc is placed into a processing chamber. The method further includes generating, at a vacuum of about 0.1 mTorr to about 50 mTorr and a temperature of about ?20° C. to about 120° C., by at least one non-contact sensor of the diagnostic disc, sensor data of a component disposed within the processing chamber. The method further includes wirelessly transmitting the sensor data to the computing system via the secure wireless connection using the wireless communication circuit. The diagnostic disc includes a disc-shaped body, a printed circuit board (PCB), a power source coupled to the PCB, a casing that encapsulates the power source, and a cover positioned over the PCB and the power source.Type: ApplicationFiled: February 14, 2023Publication date: June 22, 2023Inventors: Phillip A. Criminale, Zhiqiang Guo, Philip A. Kraus, Andrew Myles, Martin Perez-Guzman
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Patent number: 11626281Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.Type: GrantFiled: September 18, 2020Date of Patent: April 11, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Hanhong Chen, Philip A. Kraus, Joseph AuBuchon
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Patent number: 11589474Abstract: A diagnostic disc includes a disc-shaped body having raised walls that encircle the interior of the disc-shaped body and at least one protrusion extending outwardly from the disc-shaped body. The raised walls of the disc-shaped body define a cavity of the disc-shaped body. A non-contact sensor is attached to each of the at least one protrusion. A printed circuit board (PCB) is positioned within the cavity formed on the disc-shaped body. A vacuum and high temperature tolerant power source is disposed on the PCB along with a wireless charger and circuitry that is coupled to each non-contact sensor and includes at least a wireless communication circuit and a memory. A cover is positioned over the cavity of the disc-shaped body and shields at least a portion of the PCB, circuitry, power source, and wireless charger within the cavity from an external environment.Type: GrantFiled: June 2, 2020Date of Patent: February 21, 2023Assignee: Applied Materials, Inc.Inventors: Phillip A. Criminale, Zhiqiang Guo, Philip A. Kraus, Andrew Myles, Martin Perez-Guzman
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Patent number: 11562909Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.Type: GrantFiled: May 22, 2020Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Yu Lei, Xuesong Lu, Tae Hong Ha, Xianmin Tang, Andrew Nguyen, Tza-Jing Gung, Philip A. Kraus, Chung Nang Liu, Hui Sun, Yufei Hu
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Publication number: 20220389571Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.Type: ApplicationFiled: May 26, 2022Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Joseph AuBuchon, Philip A. Kraus, Thai Cheng Chua, James Canducci, Hanhong Chen, Zhejun Zhang, Hao Zhang, Xiankai Yu
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Publication number: 20220336223Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.Type: ApplicationFiled: June 22, 2022Publication date: October 20, 2022Applicant: Applied Materials, Inc.Inventors: Yu Lei, Xuesong Lu, Tae Hong Ha, Xianmin Tang, Andrew Nguyen, Tza-Jing Gung, Philip A. Kraus, Chung Nang Liu, Hui Sun, Yufei Hu
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Publication number: 20220328285Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.Type: ApplicationFiled: October 7, 2021Publication date: October 13, 2022Inventors: Abdullah ZAFAR, William John DURAND, Xinyuan CHONG, Kenric CHOI, Weize HU, Kelvin CHAN, Amir BAYATI, Michelle SANPEDRO, Philip A. KRAUS, Adolph Miller ALLEN
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Publication number: 20220307131Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.Type: ApplicationFiled: March 26, 2021Publication date: September 29, 2022Applicant: Applied Materials, Inc.Inventors: Anantha K. Subramani, Seyyed Abdolreza Fazeli, Yang Guo, Ramcharan Sundar, Arun Kumar Kotrappa, Steven Mosbrucker, Steven D. Marcus, Xinhai Han, Kesong Hu, Tianyang Li, Philip A. Kraus
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Publication number: 20220272278Abstract: Embodiments disclosed herein include a diagnostic substrate, comprising a baseplate, and a first plurality of image sensors on the baseplate, where the first plurality of image sensors are oriented horizontal to the baseplate. In an embodiment, the diagnostic substrate further comprises a second plurality of image sensors on the baseplate, where the second plurality of image sensors are oriented at a non-orthogonal angle to the baseplate. In an embodiment, the diagnostic substrate further comprises a printed circuit board (PCB) on the baseplate, and a controller on the baseplate, where the controller is communicatively coupled to the first plurality of image sensors and the second plurality of image sensors by the PCB. In an embodiment, the diagnostic substrate further comprises a diffuser lid over the baseplate, the PCB, and the controller.Type: ApplicationFiled: February 9, 2022Publication date: August 25, 2022Inventors: Upendra Ummethala, Philip Kraus, Keith Berding, Blake Erickson, Patrick Tae, Devendra Channappa Holeyannavar, Shivaral Manjunath Nara, Anandakumar Parameshwarappa, Sivasankar Nagarajan, Dhirendra Kumar