Abstract: This disclosure provides methods for generating functionalized nanoswitches, as well as the functionalized nanoswitches themselves, and methods of use thereof.

Abstract: Provided herein are nucleic acid-based nanoswitches that can detect specific nucleic acids and other analytes types by for example a simple gel electrophoresis readout. Binding of the target to the nanoswitches induces a conformation change from a linear, open conformation to a looped, closed conformation. These nanoswitches may be used in diagnostic assays such as nucleic acid-based diagnostic assays, to detect, measure and/or purify a variety of targets including low abundance targets.

Abstract: Provided herein, inter alia, are improved methods for detecting analytes, including proteins and nucleic acids. In some instances, the analytes are detected in complex matrices such as serum.

Abstract: A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.

Abstract: A semiconductor monolithic IC includes a semiconductor substrate having a rectangular shape in plan view, multiple chiplets each comprising a circuit, wherein the multiple chiplets are disposed over the semiconductor substrate and are separated from each other by die-to-die spaces filled with a dielectric material, and a plurality of conductive connection patterns electrically connecting the multiple chiplets so that a combination of the circuit of the multiple chiplet function as one functional circuit. The chip region has a larger area than a maximum exposure area of a lithography apparatus used to fabricate the first and second circuits.

Abstract: A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.

Abstract: Provided herein, inter alia, are improved methods for detecting analytes, including proteins and nucleic acids. In some instances, the analytes are detected in complex matrices such as serum.

Abstract: Provided herein are nucleic acid-based nanoswitches that can detect specific nucleic acids and other analytes types by for example a simple gel electrophoresis readout. Binding of the target to the nanoswitches induces a conformation change from a linear, open conformation to a looped, closed conformation. These nanoswitches may be used in diagnostic assays such as nucleic acid-based diagnostic assays, to detect, measure and/or purify a variety of targets including low abundance targets.

Abstract: A memory device that includes at least one memory cell is introduced. Each of the at least one memory cell is coupled to a bit line and a word line. Each of the at least one memory cell includes a memory element and a selector element, in which the memory element is configured to store data of the at least one memory cell. The selector element is coupled to the memory element in series and is configured to select the memory element for a read operation and amplify the data stored in the memory element in the read operation.

Abstract: Provided herein are methods and products for detecting analytes in a sample. The analytes may be rare analytes such as biomarkers in a biological sample. These methods make use of nucleic acid nanoswitches that adopt a particular conformation and have a particular length in the presence of an analyte.

Abstract: An apparatus for measuring a characteristic of a sample using a centrifuge and optical components is disclosed. The centrifuge may be a standard benchtop centrifuge. The optical components may be sized and dimensioned to fit, along with the sample, inside the centrifuge.

Abstract: A memory array, a memory structure and an operation method of a memory array are provided. The memory array includes memory cells, floating gate transistors, bit lines and word lines. The memory cells each comprise a capacitor and an electrically programmable non-volatile memory (NVM) serially connected to the capacitor, and further comprise a write transistor with a first source/drain terminal coupled to a common node of the capacitor and the electrically programmable NVM. The floating gate transistors respectively have a gate terminal electrically floated and coupled to the capacitors of a column of the memory cells. The bit lines respectively coupled to the electrically programmable NVMs of a row of the memory cells. The word lines respectively coupled to gate terminals of the write transistors in a row of the memory cells.

Abstract: A plasma source comprising a first hollow electrode and a second hollow electrode separated by a gap and a dielectric barrier of a constant width; wherein the plasma source is configured to selectively produce a plasma in either one of a first configuration and a second configuration; wherein, i) in the first configuration, a plasma-forming gas flows in the gap while a non plasma-forming gas flows within the first hollow electrode; and ii) in the second configuration, a plasma-forming gas flows within the first hollow electrode and a non plasma-forming gas flows within the gap. The method comprises selecting at least two gases of different breakdown voltages, injecting a first gas in a first electrode separated from a second hollow electrode by a gas gap of a constant width, injecting a second gas in the gas gap under an applied power.

Abstract: Provided herein are products and methods for detecting analytes using polymers that bind to such analytes and thereby undergo a conformational change or contribute to a newly formed complex.

Abstract: This disclosure provides new and improved systems and methods for analyzing binding interactions and for identifying and measuring agents that modulate such binding interactions, including weak binding interactions. The methods may be used in high throughput screening assays.

Abstract: A semiconductor monolithic IC includes a semiconductor substrate having a rectangular shape in plan view, multiple chiplets each comprising a circuit, wherein the multiple chiplets are disposed over the semiconductor substrate and are separated from each other by die-to-die spaces filled with a dielectric material, and a plurality of conductive connection patterns electrically connecting the multiple chiplets so that a combination of the circuit of the multiple chiplet function as one functional circuit. The chip region has a larger area than a maximum exposure area of a lithography apparatus used to fabricate the first and second circuits.

Abstract: A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.

Abstract: A memory array, a memory structure and an operation method of a memory array are provided. The memory array includes memory cells, floating gate transistors, bit lines and word lines. The memory cells each comprise a capacitor and an electrically programmable non-volatile memory (NVM) serially connected to the capacitor, and further comprise a write transistor with a first source/drain terminal coupled to a common node of the capacitor and the electrically programmable NVM. The floating gate transistors respectively have a gate terminal electrically floated and coupled to the capacitors of a column of the memory cells. The bit lines respectively coupled to the electrically programmable NVMs of a row of the memory cells. The word lines respectively coupled to gate terminals of the write transistors in a row of the memory cells.

Abstract: A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.

Abstract: A semiconductor monolithic IC includes a semiconductor substrate having a rectangular shape in plan view, multiple chiplets each comprising a circuit, wherein the multiple chiplets are disposed over the semiconductor substrate and are separated from each other by die-to-die spaces filled with a dielectric material, and a plurality of conductive connection patterns electrically connecting the multiple chiplets so that a combination of the circuit of the multiple chiplet function as one functional circuit. The chip region has a larger area than a maximum exposure area of a lithography apparatus used to fabricate the first and second circuits.