Patents by Inventor Philip Wong

Philip Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11735515
    Abstract: A semiconductor monolithic IC includes a semiconductor substrate having a rectangular shape in plan view, multiple chiplets each comprising a circuit, wherein the multiple chiplets are disposed over the semiconductor substrate and are separated from each other by die-to-die spaces filled with a dielectric material, and a plurality of conductive connection patterns electrically connecting the multiple chiplets so that a combination of the circuit of the multiple chiplet function as one functional circuit. The chip region has a larger area than a maximum exposure area of a lithography apparatus used to fabricate the first and second circuits.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Murat Kerem Akarvardar, Hon-Sum Philip Wong
  • Patent number: 11721376
    Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.
    Type: Grant
    Filed: April 21, 2022
    Date of Patent: August 8, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Li Chiang, Chung-Te Lin, Shy-Jay Lin, Tzu-Chiang Chen, Ming-Yuan Song, Hon-Sum Philip Wong
  • Patent number: 11713483
    Abstract: Provided herein are products and methods for detecting analytes using polymers that bind to such analytes and thereby undergo a conformational change or contribute to a newly formed complex.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: August 1, 2023
    Assignee: Children's Medical Center Corporation
    Inventors: Wesley Philip Wong, Clinton H. Hansen
  • Publication number: 20230225132
    Abstract: A memory structure includes a substrate. The memory structure further includes a first transistor, wherein the first transistor is a first distance from the substrate. The memory structure further includes a second transistor, wherein the second transistor is a second distance from the substrate, and the first distance is different from the second distance, and a first source/drain (S/D) region of the first transistor is connected to a second S/D region of the second transistor. The memory structure further includes a plurality of storage elements electrically connected to both the first transistor and the second transistor, wherein each of the plurality of storage elements is a third distance from the substrate, and the third distance is different from both the first distance and the second distance.
    Type: Application
    Filed: April 22, 2022
    Publication date: July 13, 2023
    Inventors: Hung-Li CHIANG, Jer-Fu WANG, Yi-Tse HUNG, Tzu-Chiang CHEN, Meng-Fan CHANG, Hon-Sum Philip WONG
  • Publication number: 20230146476
    Abstract: Provided herein are compositions and methods for determining the structure of individual targets by determining long-range distances within such targets.
    Type: Application
    Filed: February 26, 2021
    Publication date: May 11, 2023
    Applicants: President and Fellows of Harvard College, Children's Medical Center Corporation, Dana-Farber Cancer Institute, Inc.
    Inventors: James I. MacDonald, Michael H. Raez, William M. Shih, Wesley Philip Wong
  • Publication number: 20230125070
    Abstract: An integrated circuit (IC) device includes a first terminal, a second terminal, a resistive memory device configured to have a first resistance level in a first state and a second resistance level in a second state, and a switching device including a control terminal and a current path. The resistive memory device and the current path are coupled in series between the first and second terminals, and the switching device is configured to, responsive to a first voltage level at the control terminal, control the current path to have a first conductance level in a first programmed state and a second conductance level in a second programmed state.
    Type: Application
    Filed: January 18, 2022
    Publication date: April 27, 2023
    Inventors: Kerem AKARVARDAR, Hon-Sum Philip WONG
  • Patent number: 11591636
    Abstract: Provided herein are methods and products for detecting analytes in a sample. The analytes may be rare analytes such as biomarkers in a biological sample. These methods make use of nucleic acid nanoswitches that adopt a particular conformation and have a particular length in the presence of an analyte.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: February 28, 2023
    Assignee: Children's Medical Center Corporation
    Inventors: Wesley Philip Wong, Johanna Blass, Darren Yang, Clinton H. Hansen
  • Publication number: 20230045556
    Abstract: The invention provides compositions comprising nucleic acid complexes for use in screening compounds based on their ability to modulate binding interactions, wherein the compounds are barcoded.
    Type: Application
    Filed: June 21, 2022
    Publication date: February 9, 2023
    Applicant: Children's Medical Center Corporation
    Inventors: Wesley Philip Wong, Clinton H. Hansen
  • Publication number: 20220353982
    Abstract: A plasma source comprising a first hollow electrode and a second hollow electrode separated by a gap and a dielectric barrier of a constant width; wherein the plasma source is configured to selectively produce a plasma in either one of a first configuration and a second configuration; wherein, i) in the first configuration, a plasma-forming gas flows in the gap while a non plasma-forming gas flows within the first hollow electrode; and ii) in the second configuration, a plasma-forming gas flows within the first hollow electrode and a non plasma-forming gas flows within the gap. The method comprises selecting at least two gases of different breakdown voltages, injecting a first gas in a first electrode separated from a second hollow electrode by a gas gap of a constant width, injecting a second gas in the gas gap under an applied power.
    Type: Application
    Filed: August 5, 2020
    Publication date: November 3, 2022
    Inventors: Jean-Sébastien BOISVERT, Philip WONG, Valérie LÉVEILLÉ
  • Patent number: 11414694
    Abstract: The present disclosure provides nucleic acid-based nanoswitch catenanes and methods of use. A nanoswitch catenane may include a single-stranded nucleic acid comprising a first and second terminal domain linked to each other to form a host ring by one of a first, second or third switchable bridges, wherein the first switchable bridge is formed in the presence of a reaction agent through the reaction of two cognate functional groups, each linked to a terminal domain of the single-stranded nucleic acid, wherein the second switchable bridge is formed in the presence of a biomolecule of interest through binding of the bio-molecule of interest to two cognate antibodies, each linked to a terminal domain of the single stranded nucleic acid, and wherein the third switchable bridge is a link between two cognate functional groups that breaks in the presence of a dissociation agent. A nanoswitch catenane may also include a circular nucleic acid guest ring catenated with the host ring.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: August 16, 2022
    Assignees: Children's Medical Center Corporation, Dana-Farber Cancer Institute, Inc.
    Inventors: Wesley Philip Wong, William M. Shih
  • Publication number: 20220246189
    Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.
    Type: Application
    Filed: April 21, 2022
    Publication date: August 4, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Li Chiang, Chung-Te Lin, Shy-Jay Lin, Tzu-Chiang Chen, Ming-Yuan Song, Hon-Sum Philip Wong
  • Patent number: 11396650
    Abstract: The invention provides compositions comprising nucleic acid complexes for use in screening compounds based on their ability to modulate binding interactions, wherein the compounds are barcoded.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: July 26, 2022
    Assignee: Children's Medical Center Corporation
    Inventors: Wesley Philip Wong, Clinton H. Hansen
  • Publication number: 20220165320
    Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.
    Type: Application
    Filed: November 24, 2020
    Publication date: May 26, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Li Chiang, Chung-Te Lin, Shy-Jay Lin, Tzu-Chiang Chen, Ming-Yuan Song, Hon-Sum Philip Wong
  • Patent number: 11342015
    Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: May 24, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Li Chiang, Chung-Te Lin, Shy-Jay Lin, Tzu-Chiang Chen, Ming-Yuan Song, Hon-Sum Philip Wong
  • Publication number: 20220123050
    Abstract: A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.
    Type: Application
    Filed: December 27, 2021
    Publication date: April 21, 2022
    Inventors: Mauricio Manfrini, Hon-Sum Philip Wong
  • Publication number: 20220115590
    Abstract: A low-power phase-change memory (PCM) technology with interfacial thermoelectric heating (TEH) enhancement is provided. Embodiments described herein leverage a substantial, positive thermoelectric coefficient in PCM materials to generate additional heating or cooling at an interface with another material, enabling memory switching with a large reduction in current and power. Interfacial thermoelectric engineering is applied to a PCM cell using a special class of thermoelectric materials with large negative Seebeck coefficients (e.g., bismuth telluride (Bi2Te3), lead telluride (PbTe), lanthanum telluride (La3Te4), indium selenide (InSe), silicon-germanium (Si0.8Ge0.2)) to induce efficient heating at significantly lowered power and current.
    Type: Application
    Filed: October 11, 2021
    Publication date: April 14, 2022
    Inventors: Asir Intisar Khan, Eric Pop, Raisul Islam, H.-S. Philip Wong, Kenneth E. Goodson, Mehdi Asheghi, Heungdong Kwon
  • Publication number: 20220076741
    Abstract: A memory device that includes at least one memory cell is introduced. Each of the at least one memory cell is coupled to a bit line and a word line. Each of the at least one memory cell includes a memory element and a selector element, in which the memory element is configured to store data of the at least one memory cell. The selector element is coupled to the memory element in series and is configured to select the memory element for a read operation and amplify the data stored in the memory element in the read operation.
    Type: Application
    Filed: November 18, 2021
    Publication date: March 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Li Chiang, Chao-Ching Cheng, Tzu-Chiang Chen, Yu-Sheng Chen, Hon-Sum Philip Wong
  • Patent number: 11217307
    Abstract: The present disclosure relates to a method of programming resistive memory cells of a resistive memory, the method comprising: applying, by a programming circuit based on a first target resistive state, an initial resistance modification to a first cell of the resistive memory to change its resistance from an initial resistive state to a first new resistance; comparing, by the programming circuit, the first new resistance of the first cell with a resistance range of the first target resistive state and with a target resistance range associated with the first target resistive state; and if it is determined that the first new resistance is outside the resistance range of the target resistive state and inside the target resistance range, applying by the programming circuit one or more further resistance modifications to the first cell to increase or decrease its resistance.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: January 4, 2022
    Assignees: Commissariat à l'Energie Atomique et aux Energies Alternatives, The Board of Trustees of the Leland Stanford Junior University
    Inventors: Elisa Vianello, Etienne Nowak, Binh Quang Le, Subhasish Mitra, Fan Tony Wu, Philip Wong
  • Publication number: 20210407901
    Abstract: A semiconductor monolithic IC includes a semiconductor substrate having a rectangular shape in plan view, multiple chiplets each comprising a circuit, wherein the multiple chiplets are disposed over the semiconductor substrate and are separated from each other by die-to-die spaces filled with a dielectric material, and a plurality of conductive connection patterns electrically connecting the multiple chiplets so that a combination of the circuit of the multiple chiplet function as one functional circuit. The chip region has a larger area than a maximum exposure area of a lithography apparatus used to fabricate the first and second circuits.
    Type: Application
    Filed: January 29, 2021
    Publication date: December 30, 2021
    Inventors: Kerem Akarvardar, Hon-Sum Philip Wong
  • Patent number: 11211426
    Abstract: A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: December 28, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mauricio Manfrini, Hon-Sum Philip Wong