Abstract: A resistive non-volatile memory cell includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, the memory cell being capable of reversibly switching between: —a high resistance state obtained by applying a first bias voltage between the first electrode and the second electrode; and—a low resistance state obtained by applying a second bias voltage between the first electrode and the second electrode; the oxide layer including a switching zone forming a conduction path prioritised for the current passing through the memory cell when the memory cell is in the low resistance state. The oxide layer includes a first zone doped with aluminium or silicon, the aluminium or silicon being present in the first zone with an atomic concentration that is selected so as to locate the switching zone outside the first zone.

Abstract: A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

Abstract: A device for selecting a storage cell, includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, wherein the oxide layer is doped with a first element from column IV of the periodic table.

Abstract: A device for selecting a storage cell, includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, wherein the oxide layer is doped with a first element from column IV of the periodic table.

Abstract: A resistive non-volatile memory cell includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, the memory cell being capable of reversibly switching between: —a high resistance state obtained by applying a first bias voltage between the first electrode and the second electrode; and—a low resistance state obtained by applying a second bias voltage between the first electrode and the second electrode; the oxide layer including a switching zone forming a conduction path prioritised for the current passing through the memory cell when the memory cell is in the low resistance state. The oxide layer includes a first zone doped with aluminium or silicon, the aluminium or silicon being present in the first zone with an atomic concentration that is selected so as to locate the switching zone outside the first zone.

Abstract: A method for fabricating an OxRAM type memory location, including the steps of providing a stack including a superposition of a first layer that includes a first material made of Ti at more than 30% by mole fraction; a second layer made of HfO2 positioned under the first layer; via an ion implantation of a second material chosen from Xe, Kr or Ar in the first layer, carrying out an implantation of the first material in the second layer by collision with recoil effect in the first layer.

Abstract: A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%.

Abstract: A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

Abstract: A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.

Abstract: The invention relates to a method for adjusting the driveability of at least one wheel of a vehicle, in particular an automobile, that comprises a wheel driving engine (50), engine control means (40), means (62) for supplying information on an acceleration level desired by the vehicle driver, means (22) for providing information on the vehicle acceleration level, and an electronic control unit including computing means (70) for receiving the different information. The computing means (70) are adapted in order to obtain a vehicle acceleration level that corresponds to the acceleration level desired by the driver. The device further includes means for providing information on the vehicle inclination.

Abstract: The system of the invention includes sensors (11, 12, 13) for measuring physical values useful for driving assistance, a path correction electronic calculator (20) including a Hill Assist (HA) module for hill start assistance and a Hill Descent Control module for limiting the downhill speed, and actuators (31 to 35) controlled by said calculator for acting on the different driving parameters. The calculator further includes a Hill Assist Descent Control (HADC) for driveability control assistance in slopes, that enables or disables the Hill Assist (HA) and Hill Descent Control (HDC) modules based on specific control rules for managing intermediate life situations between the situations managed by the Hill Assist (HA) module and those managed by the Hill Descent Control (HDC) module. The invention also relates to automobiles and to automobile driving assistance systems.

Abstract: An anti-skid device for the driving wheels (10) of a vehicle, in particular an automotive vehicle, includes an active braking device (16) of the torque to be transmitted to the driving wheels; a torque regulator (12) providing a control signal (Cb) to the active braking device (16) according to information on the regulation deviations (?v) relative to a set predetermined regulation; a control unit (20) providing the regulator (12) with regulation initialization information (In). The control unit (20) obtains the regulation initialization information (In) from evolution parameters of the vehicle on all terrains, such as the adhesion and the speed of the driving wheels, the slope and/or slant of the terrain. Application: anti-skid device for the wheels of an automotive vehicle.

Abstract: An anti-skid device for the driving wheels (10) of a vehicle, in particular an automotive vehicle, comprising: an active braking device (16) of the torque to be transmitted to the driving wheels; a torque regulator (12) providing a control signal (Cb) to the active braking device (16) according to information on the regulation deviations (?v) relative to a set predetermined regulation; —a control unit (20) providing the regulator (12) with regulation initialisation information (In). The control unit (20) comprises means for obtaining the regulation initialisation information (In) from evolution parameters of the vehicle on all terrains, such as the adhesion and the speed of the driving wheels, the slope and/or slant of the terrain. Application: anti-skid device for the wheels of an automotive vehicle.

Abstract: The invention relates to a method for adjusting the driveability of at least one wheel of a vehicle, in particular an automobile, that comprises a wheel driving engine (50), engine control means (40), means (62) for supplying information on an acceleration level desired by the vehicle driver, means (22) for providing information on the vehicle acceleration level, and an electronic control unit including computing means (70) for receiving the different information. The computing means (70) are adapted in order to obtain a vehicle acceleration level that corresponds to the acceleration level desired by the driver. The device further includes means for providing information on the vehicle inclination.

Abstract: The invention relates to a vehicle control device comprising: —means (10, 20, 30) for generating various control modes dependent on parameters concerned with the way in which the vehicle is moving such as, rotational speed of the wheels, yaw rate, lateral acceleration and longitudinal acceleration, pressure on the brake controls exerted by the driver, and a vehicle life situation mode chosen by the driver from various preestablished life situations corresponding to different types of road and terrain and different vehicle rolling conditions, —estimating means (40) for estimating the vehicle life situation, the device being configured to determine an optimum control mode (32, 34, 36, 38) from among the various control modes that can be generated by the device as a function of the estimated vehicle life situation and the life situation mode chosen by the driver.

Abstract: The system of the invention includes sensors (11, 12, 13) for measuring physical values useful for driving assistance, a path correction electronic calculator (20) including a Hill Assist (HA) module for hill start assistance and a Hill Descent Control module for limiting the downhill speed, and actuators (31 to 35) controlled by said calculator for acting on the different driving parameters. The calculator further includes a Hill Assist Descent Control (HADC) for driveability control assistance in slopes, that enables or disables the Hill Assist (HA) and Hill Descent Control (HDC) modules based on specific control rules for managing intermediate life situations between the situations managed by the Hill Assist (HA) module and those managed by the Hill Descent Control (HDC) module. The invention also relates to automobiles and to automobile driving assistance systems.

Abstract: A process for braking a vehicle provided with brake calipers which can be activated as a function of a target braking force, at least the activation of the brake calipers of the rear wheels being decoupled from depression of a brake pedal, including: detecting a logical entry condition including at least a deceleration test verified when an instantaneous value of the deceleration of the vehicle is greater than a threshold deceleration; calculating of a rear base braking force by correcting the braking force required by the driver so that the rear base braking force is greater than the front base braking force; and applying the rear base braking force as target braking force for the rear wheels, so that the pitching motion of the vehicle is reduced on deceleration.