Abstract: A driving circuit for generating a required firing current for a safety device comprising an arrangement of a first transistor (M2) connected in series with a second transistor (M3); and a power control transistor (M1) connected in series with the first transistor; characterised in that the first and second transistors operate in fully switched on mode (Rds(on)) and the required firing current (I(squib)) is generated by means of varying the voltage (Vc) across the gate source of power control transistor and the first and second transistors in a predetermined manner.

Abstract: An integrated circuit comprises electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to one or more external connector(s) of the integrated circuit. The ESD protection circuitry comprises at least one ESD protection component coupled to the one or more external connectors for providing ESD protection thereto. The ESD protection circuitry further comprises an ESD connector, coupled to the one or more external connector(s), arranged to couple supplementary ESD protection to the one or more external connector(s).

Abstract: A data communication system includes one or more data processing units and includes a central control unit. The decentralized data processing units are connected to the central control unit by data connection. The central control unit (10) includes a synchronisation unit for outputting via the data connection an synchronisation signal to the data processing unit. The data processing unit includes a data generator for generating data and transmitting, after the synchronisation signal, data to the central control unit.

Abstract: A data communication system includes one or more data processing units and includes a central control unit. The decentralized data processing units are connected to the central control unit by data connection. The central control unit includes a synchronisation unit for outputting via the data connection an electric synchronisation signal to the data processing unit. The data processing unit includes a data generator for generating data and transmitting, after the electric synchronisation signal, data to the central control unit. The central control unit further includes a discharge signal generator for outputting a discharge signal via the data connection to the data processing unit.

Abstract: A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.

Abstract: A communication node including drivers for applying a switched signal to a communication line such as a CAN bus or a LIN bus, with a controlled slew rate. The driver comprises a series of transfer elements and a series of delay elements for cumulatively establishing operational connections of the transfer elements with the communication line, whereby to apply the switched signal progressively to the communication line. A feedback loop is responsive to the signal that the driver applies to the communication line for controlling the delays of the delay elements so as to control the delays with which the operational connections of the transfer elements with the communication line are established.

Abstract: A communication node including drivers (5,6) for applying a switched signal to a communication line (3,4) such as a CAN bus or a LIN bus, with a controlled slew rate. The driver (5,6) comprises a series of transfer elements (18,20) and a series of delay elements (17,19) for cumulatively establishing operational connections of the transfer elements with the communication line, whereby to apply the switched signal progressively to the communication line. A feedback loop (25,26) is responsive to the signal that the driver (5,6) applied to the communication line (3,4) for controlling he delays of the delay elements (23,24) so as to control the delays with which the operatonal connections of the transfer elements (18,20) with the communication line are established.

Abstract: An apparatus for an integrated circuit comprising a thermal sensor (41-44), an A-D converter (58) coupled to the thermal sensor, wherein the thermal sensor provides an input to the A-D converter, and the A-D converter converts the input to a digital value representative of the thermal environment of the thermal sensor. The integrated circuit collects a data value at a location on an integrated circuit wherein the data value has a predetermined functional relationship to the temperature at the location. The integrated circuit converts the data value to a value representative of the thermal environment of the location on the integrated circuit.

Abstract: An apparatus for an integrated circuit comprising a thermal sensor (41-44), an A-D converter (58) coupled to the thermal sensor, wherein the thermal sensor provides an input to the A-D converter, and the A-D converter converts the input to a digital value representative of the thermal environment of the thermal sensor. A method for an integrated circuit comprising the steps of collecting a data value at a location on an integrated circuit wherein the data value has a predetermined functional relationship to the temperature at the location; converting the data value to a value representative of the thermal environment of the location on the integrated circuit.

Abstract: A protected Darlington transistor arrangement comprising: first (2) and second (4) bipolar transistors each having a base, a collector and an emitter, the base of the first transistor being coupled to the base (B) of the Darlington transistor, the collectors of the first and second transistors being coupled to the collector (C) of the Darlington transistor, the emitter of the first transistor being coupled to the base of the second transistor, and the emitter of the second transistor being coupled to the emitter (E) of the Darlington transistor; and a third bipolar transistor (6) having a base, a collector coupled to the collector of the Darlington transistor, and an emitter, wherein the Darlington transistor arrangement further comprises: a Zener diode (8) coupled between the collector of the Darlington transistor and the base of the third transistor, the base of the third transistor being coupled to the emitter of the second transistor, and the emitter of the third transistor being coupled to the base of th