Patents by Inventor Philippe Renaud

Philippe Renaud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250099654
    Abstract: The invention relates to a scaffold material comprising a plurality of particles of a highly porous polymeric material, characterized in that said scaffold material becomes a shapeable paste once hydrated. The specific features of the particle material impart a special behavior to the scaffold, which can be easily shaped and even highly reversibly compressed, so that in certain aspects it can, if needed, be injected, said capacity to be shaped being maintained over a high range of hydration conditions. A particular aspect of the invention relates, therefore, to the use of such scaffold material for the manufacturing of shapeable body implants, such as breast implants, to the shapeable body implants themselves as well as to non-invasive methods for using thereof in creating or reconstructing a three-dimensional volume in a subject's body part.
    Type: Application
    Filed: October 3, 2024
    Publication date: March 27, 2025
    Inventors: Amélie Barbara Hildegarde Béduer, Thomas Braschler, Philippe Renaud, Giorgio Pietramaggiori, Saja Scherer
  • Patent number: 12257645
    Abstract: A turbine housing assembly is disclosed, the assembly including a turbine housing defining a rotational axis for a turbine wheel. The assembly further includes a cartridge that is receivable by the turbine housing, the cartridge including spacer posts and a plate component that includes spacer post openings. The spacer posts may be laser beam welded into the spacer post openings to form laser beam welds as well as define an axial vane clearance between the plate component and a surface of the turbine housing. The turbine housing is further contacted by ends of the spacer posts. Each of the laser beam welds includes a power ramp-up area, an intermediate area and a power ramp-down area, where the power ramp-down area curves away from the power ramp-up area to reduce weld defects.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: March 25, 2025
    Assignee: GARRETT TRANSPORTATION I INC
    Inventors: Petr Balon, Lucie Kovarova, Antonin Forbelsky, Philippe Renaud
  • Publication number: 20250063753
    Abstract: An embodiment of a semiconductor device includes a semiconductor substrate and one or more lower dielectric layers on the surface of the substrate. Source, drain, gate, and field plate openings, which are formed in a self-aligned manner, extend through the lower dielectric layer(s) to the substrate. A conformal dielectric layer is disposed over the lower dielectric layer(s) and into the gate and field plate openings. The conformal dielectric layer includes first portions on sidewalls of the gate opening, second portions on sidewalls of the field plate opening, and a third portion on the substrate at a bottom extent of the field plate opening. Gate spacers are formed on the first portions of the conformal dielectric layer. A gate electrode in the gate opening contacts the gate spacers and the semiconductor substrate. A field plate in the field plate opening contacts the second and third portions of the conformal dielectric layer.
    Type: Application
    Filed: August 17, 2023
    Publication date: February 20, 2025
    Inventors: Philippe Renaud, Congyong Zhu
  • Publication number: 20250020165
    Abstract: A bushing includes a first wall section disposed about a channel. The first wall section is formed of a first sintered powdered metal alloy having a first mean sintering temperature in powdered form. A second wall section is disposed adjacent and affixed to the first wall section about the channel. The second wall section is formed of a second sintered powdered metal alloy having a second mean sintering temperature in powdered form that is different than the first mean sintering temperature. The difference between the first and second mean sintering temperatures is about 150° C. or less.
    Type: Application
    Filed: July 12, 2023
    Publication date: January 16, 2025
    Applicant: Garrett Transportation I Inc.
    Inventors: Petr Balon, Philippe Renaud, Marek Slouka
  • Publication number: 20250010035
    Abstract: The disclosure concerns a steerable device for use as e.g. a guidewire for insertion into a subject's body. The device features a single side deflection of a bendable portion located at its distal end by application of a longitudinally-directed force either on an inner pull wire or on the bendable portion. The bendable portion is characterized by the presence of a reinforcement structure on one lateral side and a stress relief portion on the opposed lateral side that, upon actuation of the device, allows single side bending thanks to the physical constriction of the reinforcement structure, limiting the compression of one side of the bendable portion. The disclosure further concerns a system further comprising the steerable device and an actuator, as well as methods for using thereof.
    Type: Application
    Filed: June 12, 2024
    Publication date: January 9, 2025
    Inventors: Guillaume PETITPIERRE, Marc BOERS, Philippe RENAUD
  • Publication number: 20250006818
    Abstract: A transistor device and method of fabrication are provided, where the transistor device may include a semiconductor substrate, a first dielectric layer disposed on a surface of the semiconductor substrate, a second dielectric layer disposed directly on the first dielectric layer, a gate structure disposed directly on the surface of the semiconductor substrate, and a spacer structure. A first opening through the first dielectric layer and the second dielectric layer may correspond to a gate channel. Portions of the first dielectric layer and the second dielectric layer may be interposed directly between portions of the gate structure and the surface of the semiconductor substrate. The spacer structure may be disposed in the gate channel and interposed between the gate structure and the semiconductor substrate. The spacer structure may contact respective side surfaces of the first dielectric layer and the second dielectric layer that at least partially define the gate channel.
    Type: Application
    Filed: June 29, 2023
    Publication date: January 2, 2025
    Inventors: Congyong Zhu, Philippe Renaud, Darrell Glenn Hill, Gregory David Hale, Colby Greg Rampley
  • Publication number: 20250006802
    Abstract: A transistor device and method of fabrication are provided, where the transistor device may include a first dielectric layer disposed on a surface of the semiconductor substrate, a second dielectric layer disposed directly on the first dielectric layer, a third dielectric layer disposed on the second dielectric layer, a gate structure disposed directly on the surface of the semiconductor substrate in the gate channel, and a field plate disposed overlapping the gate structure. The gate may be defined via an opening that extends through the first, second, and third dielectric layers. Portions of the first and second dielectric layers may be interposed directly between the gate structure and the surface of the semiconductor substrate. A portion of the field plate may be disposed in a field plate channel at least partially defined via a second opening that extends through the second dielectric layer and the third dielectric layer.
    Type: Application
    Filed: June 29, 2023
    Publication date: January 2, 2025
    Inventors: Congyong Zhu, Philippe Renaud, Darrell Glenn Hill, Gregory David Hale, Colby Greg Rampley
  • Publication number: 20240424493
    Abstract: The invention relates to a microfluidic device (3) comprising: —an inlet channel (31) having an inlet configured to be operatively connected with a droplet source (2) wherein the inlet channel (31) has a width wi and height hi; and —an outlet channel with at least one outlet channel branch (32) operatively connected with the inlet channel (31) at a passage point (33), said outlet channel (32) having a width wo, wherein the width wo of the at least one outlet channel branch (32) and the height hi and the width wi of the inlet channel (31) satisfy a geometrical condition of formula (I), said z>1.
    Type: Application
    Filed: November 11, 2022
    Publication date: December 26, 2024
    Inventors: Philippe RENAUD, Jiande ZHOU
  • Publication number: 20240375103
    Abstract: A system for isolating and enumerating cells or particles from a fluid are disclosed. The system includes a microfluidic chip and an impedance chip fluidly connected to the microfluidic chip. The microfluidic chip includes a substrate and a microfluidic channel disposed in the substrate between an inlet and an outlet. The microfluidic channel generates a vortex within the at least one expansion region in response to fluid flowing through the microfluidic channel.
    Type: Application
    Filed: March 26, 2024
    Publication date: November 14, 2024
    Inventors: Camille Raillon, Elodie Sollier-Christen, Philippe Renaud, James Che
  • Patent number: 12114917
    Abstract: The invention provides for a device (100) for use in electrical nerve modulation in a subject, characterized in that it comprises a rotational and linear actuator (110); a tubular element (101) having a proximal end connected to the actuator (110) and a distal end; a flexible shaft (102) coaxially disposed within the tubular element (101), comprising a proximal end operably connected to the actuator (110) and a distal end, and adapted to be slid along the tubular element (101); a conformable support (103) comprising a proximal end operably connected to the tubular element's (101) distal end, and a distal end operably connected to the flexible shaft's (102) distal end, having a portion of its length helically wrapped about a distal portion of the flexible shaft (102) so to define a pitch (500) and a radius (400); and a plurality of electrodes (104) operably disposed along the helically configured portion of the conformable support (103), and electrically connectable to a generator (200), adapted to contact the
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: October 15, 2024
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Guillaume Petitpierre, Philippe Renaud
  • Patent number: 12109330
    Abstract: The invention relates to a scaffold material comprising a plurality of particles of a highly porous polymeric material, characterized in that said scaffold material becomes a shapeable paste once hydrated. The specific features of the particle material impart a special behavior to the scaffold, which can be easily shaped and even highly reversibly compressed, so that in certain aspects it can, if needed, be injected, said capacity to be shaped being maintained over a high range of hydration conditions. A particular aspect of the invention relates, therefore, to the use of such scaffold material for the manufacturing of shapeable body implants, such as breast implants, to the shapeable body implants themselves as well as to non-invasive methods for using thereof in creating or reconstructing a three-dimensional volume in a subject's body part.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: October 8, 2024
    Assignee: Ecole Polytechnique Federale de Lausanne (EPFL)
    Inventors: Amelie Barbara Hildegarde Beduer, Thomas Braschler, Philippe Renaud, Giorgio Pietramaggiori, Saja Scherer
  • Publication number: 20240326162
    Abstract: A turbine housing assembly can include a turbine housing that defines a rotational axis for a turbine wheel; and a cartridge receivable by the turbine housing, where the cartridge includes spacer posts and a plate component that includes spacer post openings, where the spacer posts are laser beam welded into the spacer post openings to form laser beam welds to define an axial vane clearance between the plate component and a surface of the turbine housing contacted by ends of the spacer posts, and where each of the laser beam welds includes a power ramp-up area, an intermediate area and a power ramp-down area, where the power ramp-down area curves away from the power ramp-up area to reduce weld defects.
    Type: Application
    Filed: March 31, 2023
    Publication date: October 3, 2024
    Inventors: Petr Balon, Lucie Kovarova, Antonin Forbelsky, Philippe Renaud
  • Publication number: 20240301887
    Abstract: A wheel includes a hub portion configured to rotate about a rotational axis. A plurality of blades extends radially outward from the hub portion. Each blade of the plurality of blades includes a leading edge and a trailing edge. The hub portion and the plurality of blades include a substrate metal that includes aluminum or an alloy thereof. The substrate metal of the plurality of blades has coated directly thereon a first coating layer including electroless nickel-phosphorous. The first coating layer has coated directly thereon a second hard coating layer that overlies the leading edges of the plurality of blades and that is formed of a physical vapor deposition-compatible material.
    Type: Application
    Filed: June 12, 2023
    Publication date: September 12, 2024
    Applicant: Garrett Transportation I Inc.
    Inventors: Philippe Renaud, Palaniappa Murukesan
  • Publication number: 20240222442
    Abstract: A semiconductor device includes a semiconductor substrate with an upper surface and a channel, source and drain electrodes over the upper surface of the semiconductor substrate, a passivation layer between the source and drain electrodes, a gate electrode between the source and drain electrodes, and a conductive field plate adjacent to the gate electrode. The passivation layer includes a lower passivation sub-layer and an upper passivation sub-layer over the lower passivation sub-layer. The gate electrode includes a lower portion that extends at least partially through the passivation layer. The conductive field plate includes a recessed region that extends through the upper passivation sub-layer but does not extend through the lower passivation sub-layer. The conductive field plate and the upper surface of the semiconductor substrate are separated by a portion of the lower passivation sub-layer.
    Type: Application
    Filed: December 29, 2022
    Publication date: July 4, 2024
    Inventors: Bernhard Grote, Jie Hu, Philippe Renaud, Congyong Zhu, Bruce McRae Green
  • Publication number: 20240222443
    Abstract: A semiconductor device includes a semiconductor substrate with an upper surface and a channel, source and drain electrodes over the upper surface of the semiconductor substrate, a passivation layer between the source and drain electrodes, a first dielectric layer over the passivation layer, a gate electrode between the source and drain electrodes, and a conductive field plate adjacent to the gate electrode. The passivation layer includes a lower passivation sub-layer and an upper passivation sub-layer over the lower passivation sub-layer. The gate electrode includes a lower portion that extends through the passivation layer. The conductive field plate includes a first portion with a recessed region that extends through the upper passivation sub-layer but does not extend through the lower passivation sub-layer, and an overhanging portion that extends over an upper surface of the first dielectric layer.
    Type: Application
    Filed: December 28, 2022
    Publication date: July 4, 2024
    Inventors: Bernhard Grote, Jie Hu, Philippe Renaud, Congyong Zhu, Bruce McRae Green
  • Patent number: 11999453
    Abstract: Protective mask (1) comprising a frame (5) for mounting on a user's face, a window (2) carried by said frame, an optical display system (10) which is capable of projecting an image, and a prism (20) capable of receiving said image from said display and forwarding it, characterised in that the prism (20) has a first (21) and a second (22) active face and a basal face (23), the window having, on its inner face (3), a projection area (30), and said display and said prism are configured so that said display projects said image onto the first active face (21), the image crosses the prism and is reflected by the basal face (23) to the second active face (22), the image is projected from said second active face (22) onto said reflection area (30) of said window (2), and said window projects said image into a user's eye.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: June 4, 2024
    Assignee: Microoled
    Inventors: Eric Marcellin-Dibon, Philippe Renaud-Goud, Cédric Siourakan-Badalou
  • Patent number: 11959493
    Abstract: A turbomachine includes a housing with an e-machine housing. Also, the turbomachine includes a rotating group supported for rotation within the housing. Moreover, the turbomachine includes an e-machine that is configured as at least one of an electric motor and an electric generator, that is operatively coupled to the rotating group, and that includes a stator that is housed within the e-machine housing. Furthermore, the turbomachine includes a thermal bridge member that extends between the stator and the e-machine housing to define a thermal path for heat to transfer from the stator to the e-machine housing. The e-machine housing includes a thermal bridge retainer member that defines an outer boundary of the thermal bridge member.
    Type: Grant
    Filed: September 16, 2021
    Date of Patent: April 16, 2024
    Assignee: GARRETT TRANSPORTATION I INC
    Inventors: Jean-Michel Geoffroy, Philippe Renaud, Baptiste Van Haesebroeck
  • Publication number: 20240042102
    Abstract: A method of producing a cryogel-based multicompartment 3D scaffold is herein disclosed. The method comprises the steps of: a) providing a first frozen polymeric layer on a refrigerated support kept at subzero temperature; b) providing subsequent polymeric layers to obtain a stack of polymeric layers by possibly modulating the subzero temperature of the refrigerated support; c) optionally incubating the final polymeric structure at subzero temperature; and d) placing the produced cryogel at a temperature above 0° C., wherein each subsequent layer i) is deposited on the previous one after freezing of this latter; ii) is deposited on the previous one before the complete polymerization of this latter; and iii) is deposited with a temperature higher than the freezing temperature of the previously deposited layer. Cryogel scaffolds obtained from said method are also disclosed.
    Type: Application
    Filed: July 5, 2023
    Publication date: February 8, 2024
    Inventors: Amélie Barbara Hildegarde Béduer, Thomas Braschler, Philippe Renaud
  • Publication number: 20230416887
    Abstract: An austenitic stainless steel alloy includes, by weight, about 23.0% to about 25.0% chromium, about 8.5% to about 10.0% nickel, about 4.0% to about 5.0% manganese, about 0.8 to about 0.9% niobium, about 0.5% to about 1.5% silicon, about 0.35% to about 0.45% carbon, about 0.2% to about 0.3% nitrogen, and a balance of iron with inevitable/unavoidable impurities. The elements tungsten and molybdenum are excluded beyond impurity levels. In one example, a turbocharger turbine housing is made of the stainless steel alloy.
    Type: Application
    Filed: June 22, 2022
    Publication date: December 28, 2023
    Applicant: Garrett Transportation I Inc
    Inventors: Pavan Kumar Chintalapati, Philippe Renaud, Ragupathy Kannusamy
  • Publication number: 20230390896
    Abstract: An abrasive flow machining process for a meridionally divided turbine housing for a turbocharger employs a fixture installed in the axial bore of the housing to force the abrasive medium to flow substantially 360° about the circumference of the volute, and to shield the portion of the divider of the turbine housing volute located proximate the turbine housing inlet.
    Type: Application
    Filed: June 2, 2022
    Publication date: December 7, 2023
    Applicant: Garrett Transportation I Inc.
    Inventors: Philippe Renaud, Sudhir Bangaru