Abstract: A method for determining the presence of a molecule coupled to the cytoplasmic side of a cellular membrane is disclosed. The method is implemented in a microfluidic setting and is particularly suitable for determining the presence and/or the activity of a G protein or an arrestin protein in a cell.

Abstract: A wheel includes a hub portion configured to rotate about a rotational axis. A plurality of blades extends radially outward from the hub portion. Each blade of the plurality of blades includes a leading edge and a trailing edge. The hub portion and the plurality of blades include a substrate metal. The substrate metal of the plurality of blades has coated directly thereon a coating layer that has a hardness of about 800 HV or greater and that includes electroless nickel-phosphorous having a phosphorous content of from about 2 to about 4 wt. %.

Abstract: A method includes forming a semiconductor device that includes a semiconductor substrate with an upper surface and a channel, source and drain electrodes over the upper surface of the semiconductor substrate, a passivation layer between the source and drain electrodes, a first dielectric layer over the passivation layer, a gate electrode between the source and drain electrodes, and a conductive field plate adjacent to the gate electrode. The passivation layer includes a lower passivation sub-layer and an upper passivation sub-layer over the lower passivation sub-layer. The gate electrode includes a lower portion that extends through the passivation layer. The conductive field plate includes a first portion with a recessed region that extends through the upper passivation sub-layer but does not extend through the lower passivation sub-layer, and an overhanging portion that extends over an upper surface of the first dielectric layer.

Abstract: The invention provides for a steerable guidewire for insertion into a body cavity, characterized in that is comprises an elongated body defining a longitudinally-arranged lumen comprising i) a proximal end portion and ii) a distal end portion comprising a spatially reconfigurable portion and a tip; a pull wire located along said lumen and affixed to said distal end portion and to said proximal end; an actuation region located on said proximal end portion adapted to impart a tension force on the pull wire resulting in a compression force to the spatially reconfigurable region; and an intermediate region tubular element on said body located between said spatially reconfigurable portion and said proximal end.

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer, a first current-carrying electrode, and a second current-carrying electrode are formed over the semiconductor substrate. The first current-carrying electrode and the second current-carrying electrode include a first conductive layer formed within first openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate between the first current-carrying electrode and the second current-carrying electrode. A first conductive element that includes the first conductive layer is formed over the first dielectric layer, adjacent to the control electrode, and between the control electrode and the second current-carrying electrode.

Abstract: A semiconductor device includes a semiconductor substrate with an upper surface and a channel, source and drain electrodes over the upper surface of the semiconductor substrate, a passivation layer between the source and drain electrodes, a first dielectric layer over the passivation layer, a gate electrode between the source and drain electrodes, and a conductive field plate adjacent to the gate electrode. The passivation layer includes a lower passivation sub-layer and an upper passivation sub-layer over the lower passivation sub-layer. The gate electrode includes a lower portion that extends through the passivation layer. The conductive field plate includes a first portion with a recessed region that extends through the upper passivation sub-layer but does not extend through the lower passivation sub-layer, and an overhanging portion that extends over an upper surface of the first dielectric layer.

Abstract: A wheel includes a hub portion configured to rotate about a rotational axis. A plurality of blades extends radially outward from the hub portion. Each blade of the plurality of blades includes a leading edge and a trailing edge. The hub portion and the plurality of blades include a substrate metal. The substrate metal of the plurality of blades has coated directly thereon a coating layer that has a hardness of about 800 HV or greater and that includes electroless nickel-phosphorous having a phosphorous content of from about 2 to about 4 wt. %.

Abstract: A wheel includes a hub portion configured to rotate about a rotational axis. A plurality of blades extends radially outward from the hub portion. Each blade of the plurality of blades includes a leading edge and a trailing edge. The hub portion and the plurality of blades include a substrate metal that includes aluminum or an alloy thereof. The substrate metal of the plurality of blades has coated directly thereon a first coating layer including electroless nickel-phosphorous. The first coating layer has coated directly thereon a second hard coating layer that overlies the leading edges of the plurality of blades and that is formed of a physical vapor deposition-compatible material.

Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a control electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers. Relative positioning of the control electrode and the field plate are determined by a single processing step such that the field plate is self-aligned to the control electrode in order to reduce variations in transistor performance associated with manufacturing process variations.

Abstract: The present invention generally belongs to the fields of medtech, labtech and impedance analysis. In particular, the present invention pertains methods and apparatuses for identification and isolation of biological entities such as cells trough impedance analyses.

Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a control electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers. Relative positioning of the control electrode and the field plate are determined by a single processing step such that the field plate is self-aligned to the control electrode in order to reduce variations in transistor performance associated with manufacturing process variations.

Abstract: The invention is achieved by a volumetric displacement calibration device (1) configured to be able to adapt at least one suction system (1000), comprising a tip (1006), having a volume VP, connected to a shaft (1003) comprising a volume change mechanism (1002). The device (1) comprises at least one main chamber (10) and one reference chamber (20), connected by a conduct (100) and a valve (102) to said main chamber (10) and at least one first pressure sensor (12) connected to said main chamber (10). The device (1) comprises also a second pressure sensor (22) connected to said reference chamber (20). The pressure sensors and calculation means allow to calculate an internal volume Vo, being the sum of the volume VP of said aspiration tip (1006), the volume (1005) of the shaft (1003) when the volume change mechanism (1002) is down. The invention is also achieved by a system (2) comprising the device (1) and at least one suction system (10001-1000n) adapted to said device (1).

Abstract: A semiconductor device and method of manufacture is presented. A silicon-on-insulator (SOI) substrate includes a layer of gallium nitride on a first surface of the SOI substrate. A device is formed over the first surface of the substrate and a first conductive feature is formed over the first surface of the substrate and electrically coupling the first conductive feature to the device. A first cavity is formed in a second surface of the SOI substrate directly below the first conductive feature, wherein the first cavity includes first upper cavity surface defined by a surface of a layer of silicon dioxide in the SOI substrate.

Abstract: A wheel includes a hub portion configured to rotate about a rotational axis. A plurality of blades extends radially outward from the hub portion. Each blade of the plurality of blades includes a leading edge and a trailing edge. The hub portion and the plurality of blades include a substrate metal. The substrate metal of the plurality of blades has coated directly thereon a first coating layer including electroless nickel-phosphorous having a phosphorous content of about 4 wt. % or greater. The first coating layer has coated directly thereon overlying the plurality of blades a second coating layer including electroless nickel-phosphorous poly-alloy having a phosphorous content that is lower than the phosphorous content of the first coating layer. The second coating layer is a functional coating layer with enhanced erosion resistance.

Abstract: The invention relates to a scaffold material comprising a plurality of particles of a highly porous polymeric material, characterized in that said scaffold material becomes a shapeable paste once hydrated. The specific features of the particle material impart a special behavior to the scaffold, which can be easily shaped and even highly reversibly compressed, so that in certain aspects it can, if needed, be injected, said capacity to be shaped being maintained over a high range of hydration conditions. A particular aspect of the invention relates, therefore, to the use of such scaffold material for the manufacturing of shapeable body implants, such as breast implants, to the shapeable body implants themselves as well as to non-invasive methods for using thereof in creating or reconstructing a three-dimensional volume in a subject's body part.

Abstract: A turbine housing assembly is disclosed, the assembly including a turbine housing defining a rotational axis for a turbine wheel. The assembly further includes a cartridge that is receivable by the turbine housing, the cartridge including spacer posts and a plate component that includes spacer post openings. The spacer posts may be laser beam welded into the spacer post openings to form laser beam welds as well as define an axial vane clearance between the plate component and a surface of the turbine housing. The turbine housing is further contacted by ends of the spacer posts. Each of the laser beam welds includes a power ramp-up area, an intermediate area and a power ramp-down area, where the power ramp-down area curves away from the power ramp-up area to reduce weld defects.

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate and one or more lower dielectric layers on the surface of the substrate. Source, drain, gate, and field plate openings, which are formed in a self-aligned manner, extend through the lower dielectric layer(s) to the substrate. A conformal dielectric layer is disposed over the lower dielectric layer(s) and into the gate and field plate openings. The conformal dielectric layer includes first portions on sidewalls of the gate opening, second portions on sidewalls of the field plate opening, and a third portion on the substrate at a bottom extent of the field plate opening. Gate spacers are formed on the first portions of the conformal dielectric layer. A gate electrode in the gate opening contacts the gate spacers and the semiconductor substrate. A field plate in the field plate opening contacts the second and third portions of the conformal dielectric layer.

Abstract: A bushing includes a first wall section disposed about a channel. The first wall section is formed of a first sintered powdered metal alloy having a first mean sintering temperature in powdered form. A second wall section is disposed adjacent and affixed to the first wall section about the channel. The second wall section is formed of a second sintered powdered metal alloy having a second mean sintering temperature in powdered form that is different than the first mean sintering temperature. The difference between the first and second mean sintering temperatures is about 150° C. or less.

Abstract: The disclosure concerns a steerable device for use as e.g. a guidewire for insertion into a subject's body. The device features a single side deflection of a bendable portion located at its distal end by application of a longitudinally-directed force either on an inner pull wire or on the bendable portion. The bendable portion is characterized by the presence of a reinforcement structure on one lateral side and a stress relief portion on the opposed lateral side that, upon actuation of the device, allows single side bending thanks to the physical constriction of the reinforcement structure, limiting the compression of one side of the bendable portion. The disclosure further concerns a system further comprising the steerable device and an actuator, as well as methods for using thereof.

Abstract: A transistor device and method of fabrication are provided, where the transistor device may include a first dielectric layer disposed on a surface of the semiconductor substrate, a second dielectric layer disposed directly on the first dielectric layer, a third dielectric layer disposed on the second dielectric layer, a gate structure disposed directly on the surface of the semiconductor substrate in the gate channel, and a field plate disposed overlapping the gate structure. The gate may be defined via an opening that extends through the first, second, and third dielectric layers. Portions of the first and second dielectric layers may be interposed directly between the gate structure and the surface of the semiconductor substrate. A portion of the field plate may be disposed in a field plate channel at least partially defined via a second opening that extends through the second dielectric layer and the third dielectric layer.