Patents by Inventor Philippe Renaud

Philippe Renaud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150190803
    Abstract: The present invention relates to a method for producing microcarriers, the method comprising the steps of providing a wafer having a bottom layer, a top layer and an insulating layer, structuring the top layer to define at least one three-dimensional structure on the top surface of the top layer, etching away the top layer to delineate lateral walls of bodies of the microcarriers, applying a continuous polymer layer over the top surface of the bodies of the microcarriers, removing the bottom layer and the insulating layer, structuring the bottom surfaces of the bodies of the microcarriers to define at least one three-dimensional structure on the bottom surface of each body, and removing the polymer layer to release the microcarriers.
    Type: Application
    Filed: July 22, 2013
    Publication date: July 9, 2015
    Applicant: MYCARTIS NV
    Inventors: Nicolas Demierre, Stephan Gamper, Raphael Tornay, Philippe Renaud
  • Patent number: 9072906
    Abstract: A preferred frequency is identified, being usable to stimulate a neurological target within a mammalian body using at least one microelectrode positioned at or near the target. To establish efficient and effective stimulation, an impedance analyzer is provided for measuring electrical impedance values indicative of a microelectrode-tissue interface across a range of different frequencies. A preferred one of the measured electrical impedance values is identified as being closest to a pure resistance. The neurological target can then be stimulated at or near the frequency associated with the preferred impedance value (peak resistance frequency), thereby promoting desirable traits, such as optimum charge transfer, minimum signal distortion, increased stimulation efficiency, and prevention of microelectrode corrosion. The peak resistance frequency can be used to determine an preferred pulse shape.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: July 7, 2015
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
    Inventors: Andre Mercanzini, Philippe Renaud
  • Publication number: 20150162141
    Abstract: The present invention relates to a method for producing microcarriers comprising the following steps: (a) providing a wafer having a sandwich structure comprising a bottom layer, a top layer and an insulating layer located between said bottom and top layers, (b) etching away the top layer to delineate lateral walls of bodies of the microcarriers, (c) depositing a first active layer at least on a top surface of the bodies, (d) applying a continuous polymer layer over the first active layer, (e) etching away the bottom layer and the insulating layer, (f) removing the polymer layer to release the microcarriers.
    Type: Application
    Filed: July 22, 2013
    Publication date: June 11, 2015
    Applicant: MYCARTIS NV
    Inventors: Raphael Tornay, Nicolas Demierre, Stephan Gamper, Philippe Renaud
  • Publication number: 20150153333
    Abstract: The method according to the invention consists in providing a wafer having a bottom layer, a top first sacrificial layer and an insulating layer, structuring the first sacrificial layer to form a three dimensional structure onto which a first structural layer is deposited to define a corresponding three dimensional structure on the bottom surface of the first structural layer. The method consists also in forming a second three dimensional structure on the upper surface of the first structural layer.
    Type: Application
    Filed: July 23, 2013
    Publication date: June 4, 2015
    Applicant: MYCARTIS NV
    Inventors: Raphael Tornay, Nicolas Demierre, Stephan Gamper, Philippe Renaud
  • Patent number: 9040463
    Abstract: The invention provides a multiplexed assay device comprising a reaction chamber and several sets of encoded microcarriers 2 wherein the reaction chamber is a microchannel 1 and wherein the longitudinal movement of the microcarriers 2 is restricted and wherein the microcarriers 2 have a shape in relation to the geometry of the microchannel 1 such that at least two can stand side by side in the microchannel 1 without touching each other and without touching the perimeter of the microchannel 1 and are preferably observable in the reaction chamber. Moreover, the invention provides a method for performing multiplexed assay based on microcarriers 2 that improves mass transfer, simplifies the preparation and the execution of the assay and facilitates readout of biological reactions and identity of microcarriers 2.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: May 26, 2015
    Assignee: MYCARTIS NV
    Inventors: Nicolas Demierre, Nader Donzel, Jose Gil, Philippe Renaud
  • Publication number: 20150105603
    Abstract: The present invention discloses a microfabricated scintillation detector, comprising a channel structure (26) for containing a liquid scintillator material therein and flowing said liquid scintillator material therethrough. The channel structure (26) comprises first and second sets (30, 36) of adjacent channel portions (32, 38) arranged in first and second layers (34, 40) and in fluid communication with each other. The second set (36) of adjacent channel portions (38) is directed at right angles with respect to the first set (30) of adjacent channel portions (32). The first and second layers (34, 40) are stacked on top of each other with a separation layer (42) in between, integrally connecting said first and second layers (34, 40). The channel structure (26) simultaneously forms a light guiding structure for guiding scintillation light (52) towards a longitudinal end of the corresponding channel portion (32, 38).
    Type: Application
    Filed: May 8, 2012
    Publication date: April 16, 2015
    Applicant: CERN - European Organization for Nuclear Research
    Inventors: Alessandro Mapelli, Pietro Maoddi, Philippe Renaud
  • Publication number: 20150041820
    Abstract: An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the second layer. The third layer has a third bandgap that is different from the second bandgap, resulting in a 2DHG in a contact region between the second layer and the third layer. A transistor of a first conductivity type includes the 2DHG, the relatively thick portion of the second layer, and the third layer, and a transistor of a second conductivity type includes the 2DEG and the relatively thin portion of the second layer.
    Type: Application
    Filed: August 12, 2013
    Publication date: February 12, 2015
    Inventor: PHILIPPE RENAUD
  • Publication number: 20150037262
    Abstract: The invention relates to a device (1) for the transplantation of cells (3) in suspension comprising a support with at least one micro-cavity (2) containing or able to contain said suspension in direct contact with the object on which the cells are to be transplanted. The device is intended for application to human tissue or human or animal body, such as the eye, the gingiva, skin, a wound or a burn.
    Type: Application
    Filed: January 28, 2013
    Publication date: February 5, 2015
    Inventors: Yann Barrandon, Hubert Van Den Bergh, Philippe Renaud, Thomas Braschler, Julien Graber, Maia Caillier
  • Patent number: 8928084
    Abstract: An ESD protection device, which is arranged to be active at a triggering voltage (Vt1) for providing ESD protection, comprises a first region of the first conductivity type formed in a semiconductor layer of the first conductivity type, the first region extending from a surface of the semiconductor layer and being coupled to a first current electrode (C) of the semiconductor device, a well region of a second conductivity type formed in the semiconductor layer extending from the surface of the semiconductor layer, and a second region of the second conductivity type formed in the well region, the second region being coupled to a second current electrode (B). The ESD protection device further comprises a floating region of the second conductivity type formed in the semiconductor layer between the first current electrode (C) and the well region and extending from the surface of the semiconductor layer a predetermined depth.
    Type: Grant
    Filed: May 4, 2007
    Date of Patent: January 6, 2015
    Assignees: Freescale Semiconductor, Inc., Le Centre National de la Recherché Scientifique (CNRS)
    Inventors: Philippe Renaud, Patrice Besse, Amaury Gendron, Nicolas Nolhier
  • Publication number: 20140334053
    Abstract: An over-current protection circuit including, a current supply switch with a first terminal coupled to a supply current input and with a second terminal coupled to a supply current output. The current supply switch is switchable at least between an on-state, in which the current supply switch provides a conductive connection between the first terminal and the second terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first terminal and the second terminal. The over-current protection circuit receives a supply current via the supply current input and provides the supply current via the supply current output if the switch is in the on-state. The current supply switch includes High Electron Mobility Transistor.
    Type: Application
    Filed: January 20, 2012
    Publication date: November 13, 2014
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Philippe Renaud, Philippe Dupuy
  • Publication number: 20140309714
    Abstract: A preferred frequency is identified, being usable to stimulate a neurological target within a mammalian body using at least one microelectrode positioned at or near the target. To establish efficient and effective stimulation, an impedance analyzer is provided for measuring electrical impedance values indicative of a microelectrode-tissue interface across a range of different frequencies. A preferred one of the measured electrical impedance values is identified as being closest to a pure resistance. The neurological target can then be stimulated at or near the frequency associated with the preferred impedance value (peak resistance frequency), thereby promoting desirable traits, such as optimum charge transfer, minimum signal distortion, increased stimulation efficiency, and prevention of microelectrode corrosion. The peak resistance frequency can be used to determine an preferred pulse shape.
    Type: Application
    Filed: June 26, 2014
    Publication date: October 16, 2014
    Inventors: Andre MERCANZINI, Philippe RENAUD
  • Publication number: 20140303703
    Abstract: Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an elongated probe shaft. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as deep within a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Inventors: Andre MERCANZINI, Philippe RENAUD
  • Publication number: 20140277258
    Abstract: Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an supportive backing layer. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as along a region of a cortex of a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation.
    Type: Application
    Filed: May 27, 2014
    Publication date: September 18, 2014
    Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
    Inventors: André MERCANZINI, Philippe RENAUD
  • Patent number: 8788064
    Abstract: Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an elongated probe shaft. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as deep within a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: July 22, 2014
    Assignee: Ecole Polytechnique Federale de Lausanne
    Inventors: Andre Mercanzini, Philippe Renaud
  • Patent number: 8788042
    Abstract: A preferred frequency is identified, being usable to stimulate a neurological target within a mammalian body using at least one microelectrode positioned at or near the target. To establish efficient and effective stimulation, an impedance analyzer is provided for measuring electrical impedance values indicative of a microelectrode-tissue interface across a range of different frequencies. A preferred one of the measured electrical impedance values is identified as being closest to a pure resistance. The neurological target can then be stimulated at or near the frequency associated with the preferred impedance value (peak resistance frequency), thereby promoting desirable traits, such as optimum charge transfer, minimum signal distortion, increased stimulation efficiency, and prevention of microelectrode corrosion. The peak resistance frequency can be used to determine an preferred pulse shape.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: July 22, 2014
    Assignee: Ecole Polytechnique Federale de Lausanne (EPFL)
    Inventors: Andre Mercanzini, Philippe Renaud
  • Patent number: 8774937
    Abstract: Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an supportive backing layer. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as along a region of a cortex of a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: July 8, 2014
    Assignee: Ecole Polytechnique Federale de Lausanne
    Inventors: André Mercanzini, Philippe Renaud
  • Patent number: 8667794
    Abstract: An assembly can include a valve seat for an exhaust bypass valve of a serial turbocharger system where the valve seat includes a base portion and a wall portion that extends axially away from the base portion; and a gasket that includes a planar portion that defines a perimeter and a socket disposed interior to the perimeter, where the socket includes a valve seat surface axially recessed from the planar portion and configured to position the seat. In various examples, the valve seat is positioned in the socket of the gasket and fixed to the gasket. Various other examples of devices, assemblies, systems, methods, etc., are also disclosed.
    Type: Grant
    Filed: June 1, 2011
    Date of Patent: March 11, 2014
    Assignee: Honeywell International Inc.
    Inventors: Jean-Luc Perrin, Marylene Ruffinoni, Philippe Renaud, Patrick Masson
  • Patent number: 8593710
    Abstract: A holographic projection device comprises for the reconstruction of scenes at least one light source which emits sufficiently coherent light for the generation of a wave front. Further, the projection device comprises at least one light modulator device containing modulation element, said projection device being of a two-dimensional design. The light modulator device and a scanning element are combined such that the light emitted by the scanning element only scans one one-dimensional arrangement of modulation elements of the two-dimensional light modulator device at a time.
    Type: Grant
    Filed: May 16, 2007
    Date of Patent: November 26, 2013
    Assignee: Seereal Technologies S.A.
    Inventor: Philippe Renaud-Goud
  • Publication number: 20130175671
    Abstract: A semiconductor wafer, comprising multiple active areas suitable for providing semiconductor devices or circuits. Inactive areas separate the active areas from each other. The wafer has a stressed layer with a first surface, and another layer which is in contact with the stressed layer along a second surface of the stressed layer, opposite to the first surface. Multiple trench lines, extend in parallel to the first surface of the stressed layer in an inactive area and have a depth less than the thickness of the semiconductor wafer.
    Type: Application
    Filed: September 30, 2010
    Publication date: July 11, 2013
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Philippe Renaud, Roland Serrano
  • Patent number: 8461626
    Abstract: A hetero-structure field effect transistor (HFET). The HFET may include a first contact and a second contact and a hetero-junction structure. The hetero-junction structure may include a first layer made from a first semiconductor material and a second layer made from a second semiconductor material. An interface at which the first layer and the second layer are in contact with each other may be provided, along which a two dimensional electron gas (2DEG) is formed in a part of the first layer directly adjacent to the interface, for propagating of electrical signals from the first contact to the second contact or vice versa. The transistor may further include a gate structure for controlling a conductance of the channel; a substrate layer made from a substrate semiconductor material, and a dielectric layer separating the first layer from the substrate layer. The second contact may include an electrical connection between the substrate layer and the first layer.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: June 11, 2013
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Philippe Renaud