Abstract: Semiconductor devices include a semiconductor substrate containing a source region and a drain region, a gate structure supported by the semiconductor substrate between the source region and the drain region, a composite drift region in the semiconductor substrate, the composite drift region extending laterally from the drain region to at least an edge of the gate structure, the composite drift region including dopant having a first conductivity type, wherein at least a portion of the dopant is buried beneath the drain region at a depth exceeding an ion implantation range, and a well region in the semiconductor substrate. The well region has a second conductivity type and is configured to form a channel therein under the gate structure during operation. Methods for the fabrication of semiconductor devices are described.

Abstract: A preferred frequency is identified, being usable to stimulate a neurological target within a mammalian body using at least one microelectrode positioned at or near the target. To establish efficient and effective stimulation, an impedance analyzer is provided for measuring electrical impedance values indicative of a microelectrode-tissue interface across a range of different frequencies. A preferred one of the measured electrical impedance values is identified as being closest to a pure resistance. The neurological target can then be stimulated at or near the frequency associated with the preferred impedance value (peak resistance frequency), thereby promoting desirable traits, such as optimum charge transfer, minimum signal distortion, increased stimulation efficiency, and prevention of microelectrode corrosion. The peak resistance frequency can be used to determine an preferred pulse shape.

Abstract: An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the second layer. The third layer has a third bandgap that is different from the second bandgap, resulting in a 2DHG in a contact region between the second layer and the third layer. A transistor of a first conductivity type includes the 2DHG, the relatively thick portion of the second layer, and the third layer, and a transistor of a second conductivity type includes the 2DEG and the relatively thin portion of the second layer.

Abstract: A preferred frequency is identified, being usable to stimulate a neurological target within a mammalian body using at least one microelectrode positioned at or near the target. To establish efficient and effective stimulation, an impedance analyzer is provided for measuring electrical impedance values indicative of a microelectrode-tissue interface across a range of different frequencies. A preferred one of the measured electrical impedance values is identified as being closest to a pure resistance. The neurological target can then be stimulated at or near the frequency associated with the preferred impedance value (peak resistance frequency), thereby promoting desirable traits, such as optimum charge transfer, minimum signal distortion, increased stimulation efficiency, and prevention of microelectrode corrosion. The peak resistance frequency can be used to determine an preferred pulse shape.

Abstract: The invention relates to a contact lens for use in the treatment of ocular inflammatory pathologies. The contact lens comprises a soft porous material coupled, in certain embodiments, with detoxifying agents. Said material and/or agents contact and neutralize inflammatory mediators present in the tear fluid of ocular pathologies patients. The nature and architecture of the soft porous material allows a greater contact area between the material itself and/or detoxifying agents with inflammatory mediators, in view of the reversible compression of the soft material that allows greater lachrymal fluid turnover and fluid exchange within the contact lens upon e.g. blinking.

Abstract: An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the second layer. The third layer has a third bandgap that is different from the second bandgap, resulting in a 2DHG in a contact region between the second layer and the third layer. A transistor of a first conductivity type includes the 2DHG, the relatively thick portion of the second layer, and the third layer, and a transistor of a second conductivity type includes the 2DEG and the relatively thin portion of the second layer.

Abstract: The invention concerns an observation device such as cell culture wells comprising an optical element such as a lens or a filter, or even combinations thereof, for compensating an optical effect induced on a sample contained in the observation device and illuminated by a light beam traversing a meniscus. The interaction of a light beam with a meniscus interposed between said light beam and a sample to be visualized, alters the image readout of the sample so that the image thereof results negatively affected. By aligning the optical axis of the optical element with that of the meniscus, an optical effect such as non-uniform light distribution of illumination of the sample can be conveniently compensated. The invention further discloses the optical elements, characterising the observation device, per se.

Abstract: The invention relates to a scaffold material comprising a plurality of particles of a highly porous polymeric material, characterized in that said scaffold material becomes a shapeable paste once hydrated. The specific features of the particle material impart a special behavior to the scaffold, which can be easily shaped and even highly reversibly compressed, so that in certain aspects it can, if needed, be injected, said capacity to be shaped being maintained over a high range of hydration conditions. A particular aspect of the invention relates, therefore, to the use of such scaffold material for the manufacturing of shapeable body implants, such as breast implants, to the shapeable body implants themselves as well as to non-invasive methods for using thereof in creating or reconstructing a three-dimensional volume in a subject's body part.

Abstract: Microfluidic system comprising a space for containing a liquid and at least one lateral chamber in communication with said space, said lateral chamber containing a metal electrode. The lateral chamber and the space are designed to be filled by the same or different liquid when the system is active.

Abstract: An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the second layer. The third layer has a third bandgap that is different from the second bandgap, resulting in a 2DHG in a contact region between the second layer and the third layer. A transistor of a first conductivity type includes the 2DHG, the relatively thick portion of the second layer, and the third layer, and a transistor of a second conductivity type includes the 2DEG and the relatively thin portion of the second layer.

Abstract: The present invention relates to a pipette tip comprising a thin holed membrane at its distal end, which is designed to be adapted with a system comprising at least an impedance analyser and a fluidic actuator to perform the dispensing and analysis of particles comprised within a conductive medium by exploiting the Coulter counter principle. The pipette tip can comprise attached or floating electrodes at its internal or external side for creating an electrical circuit. Also disclosed therein is a dispensing and analysis system, methods of using thereof and pipette tip's manufacturing methods.

Abstract: Disclosed is an austenitic stainless steel alloy that includes, by weight, about 22% to about 28% chromium, about 3.5% to about 6.5% nickel, about 1% to about 6% manganese, about 0.5% to about 2.5% silicon, about 0.5% to about 1.5% tungsten, about 0.2% to about 0.8% molybdenum, about 0.2% to about 0.8% niobium, about 0.3% to about 0.6% carbon, about 0.2% to about 0.8% nitrogen, and a balance of iron. The alloy is suitable for use in turbocharger turbine housing applications for temperature up to about 1020° C.

Abstract: A vertical power transistor device comprises: a substrate formed from a III-V semiconductor material and a multi-layer stack at least partially accommodated in the substrate. The multi-layer stack comprises: a semi-insulating layer disposed adjacent the substrate and a first layer formed from a first III-V semiconductor material and disposed adjacent the semi-insulating layer. The multi-layer stack also comprises a second layer formed from a second III-V semiconductor material disposed adjacent the first layer and a heterojunction is formed at an interface of the first and second layers.

Abstract: An over-current protection circuit including, a current supply switch with a first terminal coupled to a supply current input and with a second terminal coupled to a supply current output. The current supply switch is switchable at least between an on-state, in which the current supply switch provides a conductive connection between the first terminal and the second terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first terminal and the second terminal. The over-current protection circuit receives a supply current via the supply current input and provides the supply current via the supply current output if the switch is in the on-state. The current supply switch includes a High Electron Mobility Transistor.

Abstract: Semiconductor devices include a semiconductor substrate containing a source region and a drain region, a gate structure supported by the semiconductor substrate between the source region and the drain region, a composite drift region in the semiconductor substrate, the composite drift region extending laterally from the drain region to at least an edge of the gate structure, the composite drift region including dopant having a first conductivity type, wherein at least a portion of the dopant is buried beneath the drain region at a depth exceeding an ion implantation range, and a well region in the semiconductor substrate. The well region has a second conductivity type and is configured to form a channel therein under the gate structure during operation. Methods for the fabrication of semiconductor devices are described.

Abstract: A holographic projection apparatus and a method for magnifying a virtual visibility region, for observing a reconstructed scene with at least one light modulation device and with at least one light source having sufficiently coherent light for generating a wavefront of a scene that is coded in the light modulation device. By means of imaging the wavefront into a viewer plane, it is possible to generate the virtual visibility region for observing the reconstructed scene. The virtual visibility region has at least two virtual viewer windows. In this case, the virtual viewer windows are dimensioned such that the reconstructed scene can always be observed without tracking of the viewer windows upon movement of a viewer in the viewer plane.

Abstract: Described herein are microelectrode array devices, and methods of fabrication and use of the same, to provide highly localized and efficient electrical stimulation of a neurological target. The device includes multiple microelectrode elements arranged along an supportive backing layer. The microelectrode elements are dimensioned and shaped so as to target individual neurons, groups of neurons, and neural tissue as may be located in an animal nervous system, such as along a region of a cortex of a human brain. Beneficially, the neurological probe can be used to facilitate location of the neurological target and remain implanted for long-term monitoring and/or stimulation.

Abstract: Described herein are microelectrode array devices, and methods of fabrication, assembly and use of the same, to provide highly localized neural recording and/or neural stimulation to a neurological target. The device includes multiple microelectrode elements arranged protruding shafts. The protruding shafts are enclosed within an elongated probe shaft, and can be expanded from their enclosure. The microelectrode elements, and elongated probe shafts, are dimensioned in order to target small volumes of neurons located within the nervous system, such as in the deep brain region. Beneficially, the probe can be used to quickly identify the location of a neurological target, and remain implanted for long-term monitoring and/or stimulation.

Abstract: Described herein are microelectrode array devices, and methods of fabrication, assembly and use of the same, to provide highly localized neural recording and/or neural stimulation to a neurological target. The device includes multiple microelectrode elements arranged protruding shafts. The protruding shafts are enclosed within an elongated probe shaft, and can be expanded from their enclosure. The microelectrode elements, and elongated probe shafts, are dimensioned in order to target small volumes of neurons located within the nervous system, such as in the deep brain region. Beneficially, the probe can be used to quickly identify the location of a neurological target, and remain implanted for long-term monitoring and/or stimulation.

Abstract: Disclosed is an austenitic stainless steel alloy that includes, by weight, about 22% to about 28% chromium, about 3.5% to about 6.5% nickel, about 1% to about 6% manganese, about 0.5% to about 2.5% silicon, about 0.3% to about 0.6% carbon, about 0.2% to about 0.8% niobium, about 0.2% to about 0.8% nitrogen, and a balance of iron. Molybdenum and tungsten are excluded. The alloy is suitable for use in turbocharger turbine housing applications for temperature up to about 980° C.