Patents by Inventor Philippe Soussan

Philippe Soussan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8440504
    Abstract: The present invention is related to a method for aligning and bonding a first element (1) and a second element (2), comprising: obtaining a first element (1) having at least one protrusion, the protrusion having a base portion (12) made of a first material and an upper portion (13) made of a second, deformable material, different from the first material; obtaining a second element (2) having a first main surface and second main surface (8) and at least one through-hole between the first and second main surface; placing the first and second element onto each other; receiving in the through-hole of the second element (2) the protrusion of the first element (1), the protrusion being arranged and constructed so as to extend from an opening of the through-hole in the first main surface to a position beyond an opening of the through-hole in the second main surface (8); deforming the deformable portion (13) of the protrusion, such that the deformed portion mechanically fixes the second element (2) on the first el
    Type: Grant
    Filed: December 29, 2008
    Date of Patent: May 14, 2013
    Assignee: IMEC
    Inventors: Philippe Soussan, Wouter Ruythooren, Eric Beyne, Koen De Munck
  • Publication number: 20120279837
    Abstract: An electrostatically actuatable micro electromechanical device is provided with enhanced reliability and lifetime. The electrostatically actuatable micro electromechanical device comprises: a substrate, a first conductor fixed to the top layer of the substrate, forming a fixed electrode, a second conductor fixed to the top layer of the substrate, and a substrate area. The second conductor is electrically isolated from the first conductor and comprises a moveable portion, suspended at a predetermined distance above the first conductor, the moveable portion forming a moveable electrode which approaches the fixed electrode upon applying an actuation voltage between the first and second conductors. The selected substrate surface area is defined as the orthogonal projection of the moveable portion on the substrate between the first and second conductors. In the substrate surface area at least one recess is provided in at least the top layer of the substrate.
    Type: Application
    Filed: March 31, 2009
    Publication date: November 8, 2012
    Applicants: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Ingrid De Wolf, Xavier Rottenberg, Piotr Czarnecki, Philippe Soussan
  • Patent number: 8294976
    Abstract: An electrostatically actuatable micro electromechanical device is provided with enhanced reliability and lifetime. The electrostatically actuatable micro electromechanical device comprises: a substrate, a first conductor fixed to the top layer of the substrate, forming a fixed electrode, a second conductor fixed to the top layer of the substrate, and a substrate area. The second conductor is electrically isolated from the first conductor and comprises a moveable portion, suspended at a predetermined distance above the first conductor, the moveable portion forming a moveable electrode which approaches the fixed electrode upon applying an actuation voltage between the first and second conductors. The selected substrate surface area is defined as the orthogonal projection of the moveable portion on the substrate between the first and second conductors. In the substrate surface area at least one recess is provided in at least the top layer of the substrate.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: October 23, 2012
    Assignees: IMEC, Katholieke Universiteit Leuven, K.U. Leuven R&D
    Inventors: Ingrid De Wolf, Xavier Rottenberg, Piotr Czarnecki, Philippe Soussan
  • Publication number: 20120209100
    Abstract: A method is disclosed for packaging a device, e.g., for bio-medical applications. In one aspect, the method includes obtaining a component on a substrate and separating the component and a first part of the substrate from a second part of the substrate using at least one physical process inducing at least one sloped side wall on the first part of the substrate. The method also includes providing an encapsulation for the chip. The resulting packaged chip advantageously has a good step coverage resulting in a good hermeticity, less sharp edges resulting in a reduced risk of damaging or infection after implantation and has a relatively small packaged volume compared to conventional big box packaging techniques.
    Type: Application
    Filed: December 21, 2011
    Publication date: August 16, 2012
    Applicant: IMEC
    Inventors: Maria OP DE BEECK, Eric Beyne, Philippe Soussan
  • Publication number: 20120126391
    Abstract: Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.
    Type: Application
    Filed: November 9, 2011
    Publication date: May 24, 2012
    Applicant: IMEC
    Inventors: Alain Phommahaxay, Lieve Bogaerts, Philippe Soussan
  • Publication number: 20110086507
    Abstract: A method for providing an oxide layer on a semiconductor substrate is disclosed. In one aspect, the method includes obtaining a semiconductor substrate. The substrate may have a three-dimensional structure, which may comprise at least one hole. The method may also include forming an oxide layer on the substrate, for example, on the three-dimensional structure, by anodizing the substrate in an acidic electrolyte solution.
    Type: Application
    Filed: October 18, 2010
    Publication date: April 14, 2011
    Applicant: IMEC
    Inventors: Philippe Soussan, Eric Beyne, Philippe Muller
  • Publication number: 20110006431
    Abstract: The present invention is related to a method for aligning and bonding a first element (1) and a second element (2), comprising: obtaining a first element (1) having at least one protrusion, the protrusion having a base portion (12) made of a first material and an upper portion (13) made of a second, deformable material, different from the first material; obtaining a second element (2) having a first main surface and second main surface (8) and at least one through-hole between the first and second main surface; placing the first and second element onto each other; receiving in the through-hole of the second element (2) the protrusion of the first element (1), the protrusion being arranged and constructed so as to extend from an opening of the through-hole in the first main surface to a position beyond an opening of the through-hole in the second main surface (8); deforming the deformable portion (13) of the protrusion, such that the deformed portion mechanically fixes the second element (2) on the first el
    Type: Application
    Filed: December 29, 2008
    Publication date: January 13, 2011
    Applicant: IMEC
    Inventor: Philippe Soussan
  • Publication number: 20100264538
    Abstract: A method for the fabrication of electrical interconnects in a substrate is disclosed. In one aspect, the method includes providing a substrate having a first main surface. The method may further include producing a ring structure in the substrate from the first main surface, which surrounds an inner pillar structure and has a bottom surface. The method may further include filling the ring structure with a dielectric material. The method may further include providing a conductive inner pillar structure, thereby forming an interconnect structure, which forms an electrical path from the bottom surface up until the first main surface. This conductive inner pillar structure can for example be provided by removing the inner pillar structure leaving a pillar vacancy and partially filling the vacancy with a conductive material. The dielectric material may be applied in liquid phase.
    Type: Application
    Filed: April 14, 2010
    Publication date: October 21, 2010
    Applicant: IMEC
    Inventors: Bart Swinnen, Philippe Soussan, Deniz Sabuncuoglu Tezcan, Piet De Moor
  • Publication number: 20070071900
    Abstract: Methods for protecting metal surfaces against oxidation are provided. The methods can comprise a plasma treatment, a sintering treatment or a combination of the plasma and sintering treatment. Also provided is a method for bonding a wire on a metal bond pad using the methods for protecting a metal surface.
    Type: Application
    Filed: September 25, 2006
    Publication date: March 29, 2007
    Inventors: Philippe Soussan, Serguei Stoukatch, Eric Beyne