Abstract: A highly efficient vacuum ultraviolet circular dichroism spectrometer is provided; the spectrometer suitable for laboratory use or for integration into a beam line at a synchrotron radiation facility. In one embodiment, a spectroscopic circular dichroism instrument is provided; the instrument configured so as to enable circular dichroism data to be simultaneously obtained for multiple wavelengths of light. The instrument may be further configured to operate in at least a portion of the vacuum ultraviolet wavelength region.

Abstract: An optical metrology apparatus for measuring nanoimprint structures using Vacuum Ultra-Violet (VUV) light is described.

Abstract: A method and apparatus for providing multiple wavelength reflectance magnitude and phase for a sample is disclosed. In one embodiment, at least one of magnitude and/or phase is determined for at least some vacuum ultra-violet (VUV) wavelengths. One embodiment of the method utilizes a broadband referencing reflectometer to obtain an interference signal between reference and sample arms, in addition to the reflected intensities from each arm separately. Combined with a calibration of absolute reflectance magnitude and phase using one or more known calibration standards, the intensity and interference data can be used to obtain reflectance and phase for an unknown sample. In some embodiments, one or more properties of the calibration samples can be determined during the calibration procedure, even when the calibration samples are not stable under operating conditions, or with respect to the manufacture of the calibration samples.

Abstract: A calibration pad having multiple calibration sites is provided. A particular calibration site may be utilized until that particular site has been determined to have become unacceptable for further use, for example from contamination, in which case the calibration processes may then move to use a different calibration site(s) on the calibration pad(s). A variety of techniques may be utilized to provide the determination that a site is no longer acceptable for use. Movement may thus occur over time from site to site for use in a calibration process. A variety of criteria may be established to determine when to move to another site. Though the designation of a site as “bad” may be based upon measured reflectance data, other criteria may also be used. For example, the number of times a site has been exposed to light may be the criteria for designating a site as bad. Alternatively the cumulative exposure of a site may be the criteria.

Abstract: An optical metrology apparatus for measuring periodic structures using multiple incident azimuthal (phi) and polar (theta) incident angles is described. One embodiment provides the enhanced calculation speed for the special case of phi=90 incidence for 1-D (line and space) structures, which has the incident plane parallel to the grating lines, as opposed to the phi=0 classical mounting, which has incident plane perpendicular to the grating lines. The enhancement reduces the computation time of the phi=90 case to the same order as the corresponding phi=0 case, and in some cases the phi=90 case can be significantly faster. One advantageous configuration consists of two measurements for each sample structure, one perpendicular to the grating lines and one parallel. This provides additional information about the structure, equivalent to two simultaneous angles of incidence, without excessive increase in computation time.

Abstract: A method and apparatus is disclosed for measuring properties of an unknown sample. A reflectometer and one or more reference pieces is provided. A set of data is collected from the unknown sample and a combination of the reference pieces. A combination of the sample and reference piece data independent of incident intensity is used to determine a property of the unknown sample without calibrating incident reflectometer intensity. The method and apparatus disclosed can measure properties of thin films or scattering structures on semiconductor work pieces. In one embodiment the reflectometer utilizes vacuum ultraviolet (VUV) wavelength reflectometry. Multiple relative reflectance measurements are used to overcome effects of the inevitable contamination buildup that occurs when using optical systems in the VUV region.

Abstract: A calibration pad having multiple calibration sites is provided. A particular calibration site may be utilized until that particular site has been determined to have become unacceptable for further use, for example from contamination, in which case the calibration processes may then move to use a different calibration site(s) on the calibration pad(s). A variety of techniques may be utilized to provide the determination that a site is no longer acceptable for use. Movement may thus occur over time from site to site for use in a calibration process. A variety of criteria may be established to determine when to move to another site. Though the designation of a site as “bad” may be based upon measured reflectance data, other criteria may also be used. For example, the number of times a site has been exposed to light may be the criteria for designating a site as bad. Alternatively the cumulative exposure of a site may be the criteria.

Abstract: A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r-? stage to further reduce the footprint.

Abstract: A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r-? stage to further reduce the footprint.

Abstract: An optical metrology apparatus for measuring periodic structures using multiple incident azimuthal (phi) and polar (theta) incident angles is described. One embodiment provides the enhanced calculation speed for the special case of phi=90 incidence for 1-D (line and space) structures, which has the incident plane parallel to the grating lines, as opposed to the phi=0 classical mounting, which has incident plane perpendicular to the grating lines. The enhancement reduces the computation time of the phi=90 case to the same order as the corresponding phi=0 case, and in some cases the phi=90 case can be significantly faster. One advantageous configuration consists of two measurements for each sample structure, one perpendicular to the grating lines and one parallel. This provides additional information about the structure, equivalent to two simultaneous angles of incidence, without excessive increase in computation time.

Abstract: A method and apparatus is disclosed for measuring properties of an unknown sample. A reflectometer and one or more reference pieces is provided. A set of data is collected from the unknown sample and a combination of the reference pieces. A combination of the sample and reference piece data independent of incident intensity is used to determine a property of the unknown sample without calibrating incident reflectometer intensity. The method and apparatus disclosed can measure properties of thin films or scattering structures on semiconductor work pieces. In one embodiment the reflectometer utilizes vacuum ultraviolet (VUV) wavelength reflectometry. Multiple relative reflectance measurements are used to overcome effects of the inevitable contamination buildup that occurs when using optical systems in the VUV region.

Abstract: A reflectometer calibration technique is provided that may include the use of two calibration samples in the calibration process. Further, the technique allows for calibration even in the presence of variations between the actual and assumed properties of at least one or more of the calibration samples. In addition, the technique utilizes a ratio of the measurements from the first and second calibration samples to determine the actual properties of at least one of the calibration samples. The ratio may be a ratio of the intensity reflected from the first and second calibration samples. The samples may exhibit relatively different reflective properties at the desired wavelengths. In such a technique the reflectance data of each sample may then be considered relatively decoupled from the other and actual properties of one or more of the calibration samples may be calculated. The determined actual properties may then be utilized to assist calibration of the reflectometer.

Abstract: A method and apparatus is disclosed for measuring properties of an unknown sample. A reflectometer and one or more reference pieces is provided. A set of data is collected from the unknown sample and a combination of the reference pieces. A combination of the sample and reference piece data independent of incident intensity is used to determine a property of the unknown sample without calibrating incident reflectometer intensity. The method and apparatus disclosed can measure properties of thin films or scattering structures on semiconductor work pieces. In one embodiment the reflectometer utilizes vacuum ultraviolet (VUV) wavelength reflectometry. Multiple relative reflectance measurements are used to overcome effects of the inevitable contamination buildup that occurs when using optical systems in the VUV region.

Abstract: A reflectometer calibration technique is provided that may include the use of two calibration samples in the calibration process. Further, the technique allows for calibration even in the presence of variations between the actual and assumed properties of at least one or more of the calibration samples. In addition, the technique utilizes a ratio of the measurements from the first and second calibration samples to determine the actual properties of at least one of the calibration samples. The ratio may be a ratio of the intensity reflected from the first and second calibration samples. The samples may exhibit relatively different reflective properties at the desired wavelengths. In such a technique the reflectance data of each sample may then be considered relatively decoupled from the other and actual properties of one or more of the calibration samples may be calculated. The determined actual properties may then be utilized to assist calibration of the reflectometer.

Abstract: A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r?? stage to further reduce the footprint.

Abstract: An optical metrology apparatus for measuring periodic structures using multiple incident azimuthal (phi) and polar (theta) incident angles is described. One embodiment provides the enhanced calculation speed for the special case of phi=90 incidence for 1-D (line and space) structures, which has the incident plane parallel to the grating lines, as opposed to the phi=0 classical mounting, which has incident plane perpendicular to the grating lines. The enhancement reduces the computation time of the phi=90 case to the same order as the corresponding phi=0 case, and in some cases the phi=90 case can be significantly faster. One advantageous configuration consists of two measurements for each sample structure, one perpendicular to the grating lines and one parallel. This provides additional information about the structure, equivalent to two simultaneous angles of incidence, without excessive increase in computation time.

Abstract: An apparatus and method for examining features of a sample with a broadband beam of light obtained from a long-wavelength source that may include two distinct emitters that emit a long-wavelength radiation and a short-wavelength source that emits a short-wavelength radiation. A passage is positioned between the sources and a reflective beam combining optics is provided for shaping the long-wavelength radiation to enter the short-wavelength source via the passage and also for shaping the short-wavelength radiation that exits through the passage and propagates toward the long-wavelength source. The reflective beam combining optics shape the short-wavelength radiation such that it re-enters the short-wavelength source via the passage and is combined with the long-wavelength radiation into the broadband beam that exits the short-wavelength source.

Abstract: A reflectometer calibration technique is provided that may include the use of two calibration samples in the calibration process. Further, the technique allows for calibration even in the presence of variations between the actual and assumed properties of at least one or more of the calibration samples. In addition, the technique utilizes a ratio of the measurements from the first and second calibration samples to determine the actual properties of at least one of the calibration samples. The ratio may be a ratio of the intensity reflected from the first and second calibration samples. The samples may exhibit relatively different reflective properties at the desired wavelengths. In such a technique the reflectance data of each sample may then be considered relatively decoupled from the other and actual properties of one or more of the calibration samples may be calculated. The determined actual properties may then be utilized to assist calibration of the reflectometer.

Abstract: A reflectometer calibration technique is provided that may include the use of two calibration samples in the calibration process. Further, the technique allows for calibration even in the presence of variations between the actual and assumed properties of at least one or more of the calibration samples. In addition, the technique utilizes a ratio of the measurements from the first and second calibration samples to determine the actual properties of at least one of the calibration samples. The ratio may be a ratio of the intensity reflected from the first and second calibration samples. The samples may exhibit relatively different reflective properties at the desired wavelengths. In such a technique the reflectance data of each sample may then be considered relatively decoupled from the other and actual properties of one or more of the calibration samples may be calculated. The determined actual properties may then be utilized to assist calibration of the reflectometer.

Abstract: A reflectometer calibration technique is provided that may include the use of two calibration samples in the calibration process. Further, the technique allows for calibration even in the presence of variations between the actual and assumed properties of at least one or more of the calibration samples. In addition, the technique utilizes a ratio of the measurements from the first and second calibration samples to determine the actual properties of at least one of the calibration samples. The ratio may be a ratio of the intensity reflected from the first and second calibration samples. The samples may exhibit relatively different reflective properties at the desired wavelengths. In such a technique the reflectance data of each sample may then be considered relatively decoupled from the other and actual properties of one or more of the calibration samples may be calculated. The determined actual properties may then be utilized to assist calibration of the reflectometer.