Abstract: The present invention relates to a process for treating protein-rich seeds, these seeds being selected from at least one of the following seeds: fava beans, peas, white lupin, blue lupin, yellow lupin. characterized in that it comprises in particular the following successive steps: a) use of seeds of at least one of the abovementioned plant species, provided that these seeds have a protein content, and/or a starch content, and/or a fat content, of a value greater than or equal to a predetermined value, and, at least one of the compounds from the following group: antinutritional factor (ANF), crude cellulose, neutral detergent fiber (NDF), in a content below a predetermined level; b) pressurizing the seeds from step a) for more than 10 seconds at a minimum pressure of 10 bars until a temperature of more than 80° C. is reached.

Abstract: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.

Abstract: The present invention relates to a process for treating protein-rich seeds, these seeds being selected from at least one of the following seeds: fava beans, peas, white lupin, blue lupin, yellow lupin. characterized in that it comprises in particular the following successive steps: a) use of seeds of at least one of the abovementioned plant species, provided that these seeds have a protein content, and/or a starch content, and/or a fat content, of a value greater than or equal to a predetermined value, and, at least one of the compounds from the following group: antinutritional factor (ANF), crude cellulose, neutral detergent fiber (NDF), in a content below a predetermined level; b) pressurizing the seeds from step a) for more than 10 seconds at a minimum pressure of 10 bars until a temperature of more than 80° C. is reached.

Abstract: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.

Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.

Abstract: A method for reducing methane production in a ruminant animal comprising the step of administering to said ruminant animal an effective amount of at least one strain of bacterium of the genus Propionibacterium.

Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.

Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

Abstract: A register including: a plurality of volatile memory cells each having a first input and an output, the volatile memory cells being coupled in series with each other via their first inputs and outputs; a non-volatile memory comprising a plurality of non-volatile memory cells; and one or more serial connections adapted to perform at least one of: serially supply data to be written to the non-volatile memory from a last or another of the volatile memory cells to the non-volatile memory during a back-up operation of data stored by the volatile memory cells; and serially supply data read from the non-volatile memory to a first of the volatile memory cells during a restoration operation of the data stored by the volatile memory cells.

Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

Abstract: A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.

Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

Abstract: A method for reducing methane production in a ruminant animal comprising the step of administering to said ruminant animal an effective amount of at least one strain of bacterium of the genus Propionibacterium.

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract: Magnetic element with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, comprising: a reference magnetic layer having a fixed direction magnetization; a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer; a tunnel barrier, provided between the reference layer and the storage layer; wherein the magnetic reference layer, and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element. The magnetic element disclosed herein has a voltage gain of typically 10 to 50% compared to conventional magnetic elements and shows a reduction of the stress induced during a writing operation as well as a reduction of the aging.