Abstract: The invention relates to a magnetic memory written in a thermally assisted manner, each memory point (40) consisting of a magnetic tunnel junction, and the cross-section of the memory parallel to the plane of the layers forming the tunnel junction being circular or essentially circular. Said tunnel junction comprises at least one trapped layer (44) with a fixed magnetisation direction, a free layer (42) with a variable magnetisation direction, and an insulating layer (43) arranged between the free layer (42) and the trapped layer (44). According to the invention, the free layer (42) is formed from at least one soft magnetic layer and a trapped layer (41), said two layers being magnetically coupled by contact, and the operating temperature of the reading memory or resting memory is selected in such a way that it is lower than the blocking temperature of the respectively free and trapped layers.

Abstract: The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

Abstract: The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

Abstract: The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.

Abstract: A magneto-optical read head for detecting magnetic transitions representing data stored in a magnetic recording medium as a sense layer having an optical property that is magnetic field-dependent, two magnetic shield layers respectively disposed on opposite sides of the sense layer and allowing magnetic flux from substantially only one of the magnetic transitions to interact with the sense layer at a time, with one of the magnetic shield layers being transparent at a wavelength allowing light at that wavelength to enter into and exit from the sense layer.

Abstract: A matrix array of recording heads, wherein each head is independent from another both in terms of its magnetic circuit and excitation conductors. Each individual head has a planar magnetic circuit and an helical coil wrapped around the lower part of the magnetic circuit. The matrix array is collectively fabricated using full thin film technology on non-magnetic substrates. Preferably, the heads are aligned in an oblique lattice with the write gaps aligned along rows and offset by a constant value along columns. Each individual head is connected to the control electronics through interconnects to the backside of the wafer, allowing independent control of the write parameters. The die forming the device is shaped on its edges and top surface to optimize head/medium positioning and minimize wear.

Abstract: A magneto-optical read head for detecting magnetic transitions representing data stored in a magnetic recording medium as a sense layer having an optical property that is magnetic field-dependent, two magnetic shield layers respectively disposed on opposite sides of the sense layer and allowing magnetic flux from substantially only one of the magnetic transitions to interact with the sense layer at a time, with one of the magnetic shield layers being transparent at a wavelength allowing light at that wavelength to enter into and exit from the sense layer.

Abstract: A matrix array of recording heads, wherein each head is independent from another both in terms of its magnetic circuit and excitation conductors. Each individual head has a planar magnetic circuit and an helical coil wrapped around the lower part of the magnetic circuit. The matrix array is collectively fabricated using full thin film technology on nonmagnetic substrates. Preferably, the heads are aligned in an oblique lattice with the write gaps aligned along rows and offset by a constant value along columns. Each individual head is connected to the control electronics through interconnects to the backside of the wafer, allowing independent control of the write parameters. The die forming the device is shaped on its edges and top surface to optimize head/medium positioning and minimize wear.

Abstract: A magnetoresistive read sensor based on the spin valve effect and having a multilayered, dual spin valve structure is described. The sensor read element includes first, second and third layers of ferromagnetic material separated from each other by layers of non-magnetic metallic material. The first and third layers of ferromagnetic material, i.e., the outer layers of the structure, have their magnetization orientation fixed, while the second, intermediate ferromagnetic layer is magnetically soft and has its magnetization oriented perpendicular to that of both the outer ferromagnetic layers in the absence of an applied magnetic field. In one preferred embodiment, the two outer ferromagnetic layers have their magnetizations fixed parallel to each other by exchange coupling with adjacent antiferromagnetic layers.