Abstract: A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.

Abstract: A shift register unit, a shift register circuit, an array substrate and a display device are provided. The present disclosure relates to the field of display device manufacture, and can prevent an OLED device from flickering while writing display data. A shift register comprises a first pull-up unit, connected with a high level end, a first clock signal end and a first control node (A); a first pull-down unit, connected with a low level end, a second clock signal end, an input signal end, the first pull-up unit, a first output end and the first control node (A); a pull-down switch unit, connected with the high level end, the low level end, the first clock signal end, the second clock signal end and a second control node (B); a second pull-down unit, connected with the low level end, the second control node (B) and a second output end; and a second pull-up unit, connected with the high level end, the first control node (A) and the second output end.

Abstract: Disclosed are an electroluminescent element, a display device and a method for preparing the electroluminescent element. The electroluminescent element comprises a substrate (101) and an anode layer (102), a light-emitting layer (103) and a cathode layer (104) that are disposed in sequence on the substrate (101). At least one insertion layer (105) for adjusting electron mobility is disposed within the light-emitting layer (103). By disposing an insertion layer (105) in the light-emitting layer (103), the effect of a voltage on the recombination of electrons and holes in the light-emitting layer (103) can be reduced, the level of the recombination of carriers such as electrons and holes in the light-emitting layer (103) can be increased, and the ratio of electrons and holes that are combined can be increased.

Abstract: Embodiments of the invention provide a thin film transistor, an array substrate and a manufacturing method thereof, and a display panel. The thin film transistor comprises: an active layer pattern, a source electrode, a drain electrode and a gate electrode. The gate electrode is positioned above the active layer pattern, the source electrode is connected with the active layer pattern, the drain electrode is connected with the active layer pattern, and the source electrode and the drain electrode are disposed in an adjacent layer of the active layer pattern.

Abstract: A light-emitting control circuit, a light-emitting control method and a shift register. The light-emitting control circuit comprises an inputting terminal (Input), an input sampling unit (11), an outputting unit (12), a resetting unit (13), an output pulling-down unit (14) and an outputting terminal for a light-emitting control signal (EM[n]). The input sampling unit (11) samples an input signal under a control of a first clock signal (CK1); the outputting unit (12) generates a light-emitting control signal under a control of a second clock signal (CK2) after the input sampling unit (11) samples the input signal; the resetting unit (13) resets the light-emitting control signal through the output pulling-down unit (14) under a control of a third clock signal (13).

Abstract: An array substrate row driving unit, an array substrate row driving circuit and a display device. The array substrate row driving unit comprises an emission control module (12) and an gate driving module (11) for generating an gate driving signal. The emission control module (12), connected to the output for the gate driving signal of the gate driving module (11), for generating an emission control signal for controlling the switching of OLED under control of the gate driving signal. The gate driving signal having an opposite phase to that of the emission control signal.

Abstract: The disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which can manufacture a thin film transistor with lower contents of impurity at a low temperature. The thin film transistor comprises: a substrate, and an active layer disposed on the substrate, the active layer comprising a source region, a drain region and a channel region, wherein the active layer is formed by depositing an inducing metal on an amorphous silicon layer on the substrate by an atomic layer deposition (ALD) method and then conducting heat treatment on the amorphous silicon layer deposited with the inducing metal so that metal induction crystallization and metal induction lateral crystallization take place in the amorphous silicon layer.

Abstract: Embodiments of the invention provide a thin film transistor, an array substrate and a manufacturing method thereof, and a display panel. The thin film transistor comprises: an active layer pattern, a source electrode, a drain electrode and a gate electrode. The gate electrode is positioned above the active layer pattern, the source electrode is connected with the active layer pattern, the drain electrode is connected with the active layer pattern, and the source electrode and the drain electrode are disposed in an adjacent layer of the active layer pattern.

Abstract: An encapsulated structure of a light-emitting device, an encapsulating process thereof, and a display device comprising said encapsulated structure. The encapsulated structure of the light-emitting device comprises: a light-emitting device; and a protective layer of a quaternary ammonium salt formed on a top electrode of the light-emitting device, the quaternary ammonium salt having the following structure: wherein the anion X? is Cl?, Br?, I? or NO3?; and the substituents R1, R2, and R3 are the same or different.

Abstract: A light-emitting control circuit, a light-emitting control method and a shift register. The light-emitting control circuit comprises an inputting terminal (Input), an input sampling unit (11), an outputting unit (12), a resetting unit (13), an output pulling-down unit (14) and an outputting terminal for a light-emitting control signal (EM[n]). The input sampling unit (11) samples an input signal under a control of a first clock signal (CK1); the outputting unit (12) generates a light-emitting control signal under a control of a second clock signal (CK2) after the input sampling unit (11) samples the input signal; the resetting unit (13) resets the light-emitting control signal through the output pulling-down unit (14) under a control of a third clock signal (13).

Abstract: A shift register unit, a shift register circuit, an array substrate and a display device are provided. The present disclosure relates to the field of display device manufacture, and can prevent an OLED device from flickering while writing display data. A shift register comprises a first pull-up unit, connected with a high level end, a first clock signal end and a first control node (A); a first pull-down unit, connected with a low level end, a second clock signal end, an input signal end, the first pull-up unit, a first output end and the first control node (A); a pull-down switch unit, connected with the high level end, the low level end, the first clock signal end, the second clock signal end and a second control node (B); a second pull-down unit, connected with the low level end, the second control node (B) and a second output end; and a second pull-up unit, connected with the high level end, the first control node (A) and the second output end.

Abstract: The disclosed technology is in connection with an array substrate of a thin film transistor liquid crystal display (TFT-LCD) and a method for manufacturing the same, and the array substrate comprises: a base substrate; a gate line and a data line forming on the base substrate and defining a pixel region, a pixel electrode, a thin film transistor and a common electrode are formed in the pixel region; a black matrix made of conductive thin film material, the black matrix is electrically connected with the common electrode.

Abstract: An encapsulated structure of a light-emitting device, an encapsulating process thereof, and a display device comprising said encapsulated structure. The encapsulated structure of the light-emitting device comprises: a light-emitting device; and a protective layer of a quaternary ammonium salt formed on a top electrode of the light-emitting device, the quaternary ammonium salt having the following structure: wherein the anion X? is Cl?, Br?, I? or NO3?; and the substituents R1, R2, and R3 are the same or different.

Abstract: An array substrate row driving unit, an array substrate row driving circuit and a display device. The array substrate row driving unit comprises an emission control module (12) and an gate driving module (11) for generating an gate driving signal. The emission control module (12), connected to the output for the gate driving signal of the gate driving module (11), for generating an emission control signal for controlling the switching of OLED under control of the gate driving signal. The gate driving signal having an opposite phase to that of the emission control signal.

Abstract: The disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which can manufacture a thin film transistor with lower contents of impurity at a low temperature. The thin film transistor comprises: a substrate, and an active layer disposed on the substrate, the active layer comprising a source region, a drain region and a channel region, wherein the active layer is formed by depositing an inducing metal on an amorphous silicon layer on the substrate by an atomic layer deposition (ALD) method and then conducting heat treatment on the amorphous silicon layer deposited with the inducing metal so that metal induction crystallization and metal induction lateral crystallization take place in the amorphous silicon layer.

Abstract: Disclosed are an electroluminescent element, a display device and a method for preparing the electroluminescent element. The electroluminescent element comprises a substrate (101) and an anode layer (102), a light-emitting layer (103) and a cathode layer (104) that are disposed in sequence on the substrate (101). At least one insertion layer (105) for adjusting electron mobility is disposed within the light-emitting layer (103). By disposing an insertion layer (105) in the light-emitting layer (103), the effect of a voltage on the recombination of electrons and holes in the light-emitting layer (103) can be reduced, the level of the recombination of carriers such as electrons and holes in the light-emitting layer (103) can be increased, and the ratio of electrons and holes that are combined can be increased.

Abstract: The disclosed technology is in connection with an array substrate of a thin film transistor liquid crystal display (TFT-LCD) and a method for manufacturing the same, and the array substrate comprises: a base substrate; a gate line and a data line forming on the base substrate and defining a pixel region, a pixel electrode, a thin film transistor and a common electrode are formed in the pixel region; a black matrix made of conductive thin film material, the black matrix is electrically connected with the common electrode.

Abstract: A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the source electrode and the drain electrode; edges of the active layer are aligned with outer edges of the source electrode and the drain electrode, the outer edge of the source electrode is an edge of the source electrode opposite to the drain electrode, and the outer edge of the drain electrode is an edge of the drain electrode opposite to the source electrode. Also, a method of manufacturing a thin film transistor is provided.

Abstract: The disclosed technology is in connection with an array substrate of a thin film transistor liquid crystal display (TFT-LCD) and a method for manufacturing the same, and the array substrate comprises: a base substrate; a gate line and a data line forming on the base substrate and defining a pixel region, a pixel electrode, a thin film transistor and a common electrode are formed in the pixel region; a black matrix made of conductive thin film material, the black matrix is electrically connected with the common electrode.

Abstract: An array substrate comprises gate lines and data lines for defining pixel regions. A thin film transistor, a common electrode, and a pixel electrode with strip electrodes are formed in each pixel region, the common electrode is formed on a second insulating layer which covers the data line, the pixel electrode is formed on a third insulating layer which covers the common electrode. Thus, the area of the display region can be increased, and aperture ratio can be effectively improved.