Abstract: A method for fabricating a MOS transistor is disclosed. First, a semiconductor substrate having a gate thereon is provided. A spacer is then formed on the sidewall of the gate, and two recesses are formed adjacent to the spacer and within the semiconductor substrate. Next, the spacer is thinned, and epitaxial layer is grown in each of the two recesses. By thinning the spacer before the epitaxial layer is formed, the present invention could stop the epitaxial layer to grow against the sidewall of the spacer, thereby preventing problem such as Ion degradation.

Abstract: A system and method for positioning an electronic device. The electronic device communicates with one or more monitoring electronic devices via a location server and a plurality of base stations. The system and method receives a standard command message, determines whether information in a received message is the same as information in the standard command message, and obtains position information of the electronic device if the information in the received message is the same as the information in the user-defined standard command message. The system and method further transmit a reply message, which comprises the position information and time for acquiring the position information of the electronic device, to a corresponding monitoring electronic device.

Abstract: Dual operation centrifugal fan apparatus and methods of operating same that may be used, for example, to cool the internal heat-generating components of an information handling system or other device. The dual operation centrifugal fan apparatus may be implemented in one embodiment as a self-cleaning blower apparatus that is operated in a first normal cooling direction to dissipate heat from internal components of an information handling system, and operated in second cleaning direction to reverse airflow and expel accumulated dust from the interior of the information handling system.

Abstract: A method for fabricating a MOS transistor is disclosed. First, a semiconductor substrate having a gate thereon is provided. A spacer is then formed on the sidewall of the gate, and two recesses are formed adjacent to the spacer and within the semiconductor substrate. Next, the spacer is thinned, and epitaxial layer is grown in each of the two recesses. By thinning the spacer before the epitaxial layer is formed, the present invention could stop the epitaxial layer to grow against the sidewall of the spacer, thereby preventing problem such as Ion degradation.

Abstract: A method for selective formation of trenches is disclosed. First, a substrate is provided. The substrate includes a first semiconductor element and a second semiconductor element. The first semiconductor element has a dopant. Second, a wet etching procedure is carried out to selectively form a pair of trenches in the substrate around the second semiconductor element, a first source/drain ion implantation is selectively carried out on the first semiconductor element, or a second source/drain ion implantation is selectively carried out on the second semiconductor element.

Abstract: A method of making a package substrate includes providing a cladding sheet comprising a first metal layer, a second metal layer and an intermediate layer between the first and second metal layers; etching away a portion of the first metal layer to expose a portion of the intermediate layer thereby forming a metal island body; laminating a first copper clad on the cladding sheet comprising a first copper foil and a first insulating layer; patterning the first copper foil to form a first circuit trace; patterning the second metal layer to form a second circuit trace; removing the metal island body to form a cavity in the first insulating layer; and removing the intermediate layer from bottom of the cavity.

Abstract: A droplet ejection device for a highly viscous liquid includes a micro flow channel filled with a highly viscous liquid and having an inlet and an outlet channel; at least a branch channel communicated with the outlet channel; a highly-viscous-liquid supply device connected to the inlet so as to supply the highly viscous liquid to the micro flow channel; a gas supply device connected to the branch channel so as to supply a gas to the outlet channel by way of the branch channel; and at least a control valve mounted between the branch channel and the gas supply device so as to control an intermittent supply of the gas from the branch channel to the outlet channel to interrupt the highly-viscous-liquid flow in the outlet channel and to prompt the highly viscous fluid to form a droplet to be ejected out of the micro flow channel.

Abstract: A X-structure of a key and a manufacturing method thereof are disclosed. The X-structure comprises a first frame and a second frame. The first frame comprises a bar. The first frame is connected and pivoted to the second frame via a fold located on the bar. The key comprises a keycap, a base and the X-structure installed between the keycap and the base. The manufacturing method of the X-structure comprises: providing the X-structure and pressing the bar to generate a fold until the first engaging portions are connected and pivoted to the second engaging portions.

Abstract: A method for selective formation of trenches is disclosed. First, a substrate is provided. The substrate includes a first semiconductor element and a second semiconductor element. The first semiconductor element has a dopant. Second, a wet etching procedure is carried out to selectively form a pair of trenches in the substrate around the second semiconductor element, a first source/drain ion implantation is selectively carried out on the first semiconductor element, or a second source/drain ion implantation is selectively carried out on the second semiconductor element.

Abstract: A X-structure of a key and a manufacturing method thereof are disclosed. The X-structure comprises a first frame and a second frame. The first frame comprises a bar. The first frame is connected and pivoted to the second frame via a fold located on the bar. The key comprises a keycap, a base and the X-structure installed between the keycap and the base. The manufacturing method of the X-structure comprises: providing the X-structure and pressing the bar to generate a fold until the first engaging portions are connected and pivoted to the second engaging portions.

Abstract: A X-structure of a key and a manufacturing method thereof are disclosed. The X-structure comprises a first frame and a second frame. The first frame comprises a bar. The first frame is connected and pivoted to the second frame via a fold located on the bar. The key comprises a keycap, a base and the X-structure installed between the keycap and the base. The manufacturing method of the X-structure comprises: providing the X-structure and pressing the bar to generate a fold until the first engaging portions are connected and pivoted to the second engaging portions.

Abstract: A method of making a package substrate includes providing a cladding sheet comprising a first metal layer, a second metal layer and an intermediate layer between the first and second metal layers; etching away a portion of the first metal layer to expose a portion of the intermediate layer thereby forming a metal island body; laminating a first copper clad on the cladding sheet comprising a first copper foil and a first insulating layer; patterning the first copper foil to form a first circuit trace; patterning the second metal layer to form a second circuit trace; removing the metal island body to form a cavity in the first insulating layer; and removing the intermediate layer from bottom of the cavity.

Abstract: A package substrate structure includes a substrate with a first side and a second side opposite to the first side, a via connecting the first side and the second side, a cavity in the substrate and on the first side, and a patterned conductive layer disposed on at least one of the first side and the second side, filling the cavity and the via, and including a first conductive layer, a second conductive layer and a third conductive layer. The second conductive layer is different from at least one of the first conductive layer and the third conductive layer.

Abstract: An anti-tilt apparatus is provided in the present invention, in which a frame of a vehicle is locked or released for tilt by a locking mechanism controlled according to the vehicle moving status. In addition, the present invention further provides a frame structure of a tilt vehicle wherein the anti-tilt apparatus and an independent suspended wheel set with a tiltable frame are combined together for maintaining certain comfort, good tracking capability and driving safety while the vehicle is moving and swerving. The anti-tilt apparatus of the present invention functions to lock the tiltable frame while the vehicle is operated in low speed or stop and functions to make wheels simultaneously inwardly incline for providing a tilt capability while the vehicle is swerving in high speed so as to increase higher stability and anti-turnover capability of the vehicle.

Abstract: A system and method for positioning an electronic device. The electronic device communicates with one or more monitoring electronic devices via a location server and a plurality of base stations. The system and method receives a standard command message, determines whether information in a received message is the same as information in the standard command message, and obtains position information of the electronic device if the information in the received message is the same as the information in the user-defined standard command message. The system and method further transmit a reply message, which comprises the position information and time for acquiring the position information of the electronic device, to a corresponding monitoring electronic device.

Abstract: A computer has a plurality of sleeping modes to be switch directly. The power supply assemblies provide a plurality of power supplies to elements in the computer. The storage module is used to store executing data corresponding to each sleeping mode. The power management module is used to set the number of the power supply assemblies which need to be switched on in each sleeping mode. The control module determines the sleeping mode which is switched to according to a received trigger event and sends a first switching signal to the storage module to make the storage module store the executing data and a second switching signal to the power management module to make the power management module set the number of the power supply assemblies and switches the sleeping mode of the computer directly.

Abstract: A method for fabricating a MOS transistor is disclosed. First, a semiconductor substrate having a gate thereon is provided. A spacer is then formed on the sidewall of the gate, and two recesses are formed adjacent to the spacer and within the semiconductor substrate. Next, the spacer is thinned, and epitaxial layer is grown in each of the two recesses. By thinning the spacer before the epitaxial layer is formed, the present invention could stop the epitaxial layer to grow against the sidewall of the spacer, thereby preventing problem such as Ion degradation.

Abstract: A droplet ejection device for a highly viscous liquid includes a micro flow channel filled with a highly viscous liquid and having an inlet and an outlet channel; at least a branch channel communicated with the outlet channel; a highly-viscous-liquid supply device connected to the inlet so as to supply the highly viscous liquid to the micro flow channel; a gas supply device connected to the branch channel so as to supply a gas to the outlet channel by way of the branch channel; and at least a control valve mounted between the branch channel and the gas supply device so as to control an intermittent supply of the gas from the branch channel to the outlet channel to interrupt the highly-viscous-liquid flow in the outlet channel and to prompt the highly viscous fluid to form a droplet to be ejected out of the micro flow channel.

Abstract: A semiconductor device including a gate structure, two doped regions, and two buffer layers is provided. The gate structure is disposed on a substrate. The two doped regions are made of boron doped silicon germanium (SiGeB) and are disposed in the substrate at both sides of the gate structure. The two buffer layers are made of carbon doped silicon germanium (SiGeC) and are respectively disposed between the two doped regions and the substrate.

Abstract: An anti-tilt apparatus is provided in the present invention, in which a frame of a vehicle is locked or released for tilt by a locking mechanism controlled according to the vehicle moving status. In addition, the present invention further provides a frame structure of a tilt vehicle wherein the anti-tilt apparatus and an independent suspended wheel set with a tiltable frame are combined together for maintaining certain comfort, good tracking capability and driving safety while the vehicle is moving and swerving. The anti-tilt apparatus of the present invention functions to lock the tiltable frame while the vehicle is operated in low speed or stop and functions to make wheels simultaneously inwardly incline for providing a tilt capability while the vehicle is swerving in high speed so as to increase higher stability and anti-turnover capability of the vehicle.