Patents by Inventor Ping Cai
Ping Cai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250235842Abstract: A gas-phase process for producing a polypropylene random copolymer in a fluidized bed reactor is provided. The process comprises feeding a fluidizing medium into a reactor vessel containing a bed of catalytically active polyolefin particles. In one embodiment, the fluidizing medium comprises propylene gas, C2 and/or C4-C8 ?-olefin comonomers, hydrogen, and an inert gas. The momentum flux of the fluidizing medium, defined as is 7.0 N/m2 or greater and the condensing level of the reactor cycle gas when entering the reactor is less than 25 wt. %. In the above equation, ?g is the density of the fluidizing medium and SGV is the superficial gas velocity of the fluidizing medium.Type: ApplicationFiled: October 6, 2021Publication date: July 24, 2025Applicant: W.R. Grace & Co.-CONNInventors: Dongsheng LI, Ping CAI, David M. ERDELT, Andrej HORAK
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Patent number: 12364749Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.Type: GrantFiled: March 29, 2023Date of Patent: July 22, 2025Assignee: Pfizer Inc.Inventors: Ye Che, Philip Ralph Dormitzer, Alexey Vyacheslavovich Gribenko, Luke David Handke, Avvari Krishna Prasad, Xiayang Qiu, Mark Edward Ruppen, Xi Song, Kena Anne Swanson, Srinivas Kodali, Xin Xu, Kariann Sweeney Efferen, Ping Cai, Kristin Rachael Tompkins, Lorna Del Pilar Nunez
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Publication number: 20240343840Abstract: A process for increasing a settled bulk density of a granular polyolefin polymer includes feeding a catalyst stream into a gas phase polymerization reactor, the catalyst stream comprising catalyst particles, optionally in slurry form by suspending in a mineral oil and/or other hydrocarbon liquid, contained in a carrier fluid; feeding a support gas into the gas phase polymerization reactor together with the catalyst stream entering the reactor, the support gas being fed into the gas phase reactor at a velocity; forming polyolefin particles in the gas phase polymerization reactor through contact with the catalyst particles and a monomer and optionally one or more comonomers; and determining a settled bulk density of the granular polyolefin particles, and, based on the settled bulk density, selectively increasing or decreasing the velocity of the support gas in order to maintain the settled bulk density above a preset limit.Type: ApplicationFiled: August 8, 2022Publication date: October 17, 2024Applicant: W.R. Grace & Co.-Conn.Inventors: Ping CAI, David M. ERDELT, John Dealon STANLEY
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Publication number: 20240309133Abstract: A propylene terpolymer is constructed that is particularly well suited for use in heat seal applications. The propylene terpolymer, for instance, can be used to form a heat seal layer on a multilayer film. The heat seal layer can be used to bond two opposing layers of film together for forming packages and other articles. The propylene terpolymer is formed with an increased random ethylene distribution that results in reduced polymer crystallinity, reduced melting temperature, and lower heat seal temperature.Type: ApplicationFiled: June 30, 2022Publication date: September 19, 2024Applicant: W.R. Grace & Co.-Conn.Inventors: Zhiru MA, Jose Manuel REGO, Jonathan REEDS, Ping CAI
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Publication number: 20240025950Abstract: The invention relates to a purification method of a recombinantly-produced RSV F protein in trimeric form. According to the invention, the method sequentially comprises an anion exchange chromatography step, a cHA chromatography step and a HIC step. The invention is also directed to a pharmaceutical product including an RSV F protein purified by such a method.Type: ApplicationFiled: July 22, 2021Publication date: January 25, 2024Inventors: Ping Cai, Eun Hee Koh, Eugene Joseph Vidunas, Michele L. Weaver, Xinhao Ye, Yonghui Yuan, Jay Zhixing Zhao
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Publication number: 20230352349Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Applicant: Applied Materials, Inc.Inventors: Mandar B. Pandit, Man-Ping Cai, Wenhui Li, Michael Wenyoung Tsiang, Praket Prakash Jha, Jingmin Leng
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Publication number: 20230330136Abstract: Brain-targeted (BT) and ROS-activable nanoconstructs (NC) comprising a metal oxide nanoparticle embedded in a matrix of lipid and a brain targeted polymer (BTP)/platform configured to facilitate blood brain barrier (BBB) penetration and accumulation in a disease area of the central nervous system (CNS), as well as compositions having the BT and ROS-activable NC and methods of using the BT and ROS-activable NC to treat and diagnose a CNS disease or condition.Type: ApplicationFiled: September 29, 2021Publication date: October 19, 2023Applicant: THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTOInventors: Xiaoyu WU, Chunsheng HE, Azhar ABBASI, Taksim AHMED, Jeffrey HENDERSON, Ping CAI
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Publication number: 20230218738Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.Type: ApplicationFiled: March 29, 2023Publication date: July 13, 2023Inventors: Ye Che, Philip Ralph Dormitzer, Alexey Vyacheslavovich Gribenko, Luke David Handke, Avvari Krishna Prasad, Xiayang Qiu, Mark Edward Ruppen, Xi Song, Kena Anne Swanson, Srinivas Kodali, Xin Xu, KariAnn Sweeney Efferen, Ping Cai, Kristin Rachael Tompkins, Lorna del Pilar Nunez
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Patent number: 11699623Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.Type: GrantFiled: October 14, 2020Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Mandar B. Pandit, Man-Ping Cai, Wenhui Li, Michael Wenyoung Tsiang, Praket Prakash Jha, Jingmin Leng
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Publication number: 20230031044Abstract: The present disclosure provides a service processing method, a user device and a computer-readable storage medium. The user device includes a first subscriber identity module and a second subscriber identity module. The first subscriber identity module is associated with a first subscriber identity, and the second subscriber identity module is associated with a second subscriber identity. The method includes: accessing a mobile network based on the first subscriber identity; and performing a wireless local area network voice VoWiFi service of the second subscriber identity based on a network port corresponding to the mobile network.Type: ApplicationFiled: October 12, 2022Publication date: February 2, 2023Inventors: Yuanze MAO, Jinzhao LIN, Yanbing WANG, Ping CAI, Yu JIANG
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Publication number: 20220375747Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.Type: ApplicationFiled: May 20, 2021Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Wenhui Li, Praket P. Jha, Mandar B. Pandit, Man-Ping Cai, Jingmei Liang, Michael Wenyoung Tsiang
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Publication number: 20220115275Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.Type: ApplicationFiled: October 14, 2020Publication date: April 14, 2022Applicant: Applied Materials, Inc.Inventors: Mandar B. Pandit, Man-Ping Cai, Wenhui Li, Michael Wenyoung Tsiang, Praket Prakash Jha, Jingmin Leng
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Patent number: 11180577Abstract: Embodiments of the present disclosure are directed towards methods for rating polymerization processes based upon a first cracking index value and a second cracking index value.Type: GrantFiled: December 6, 2017Date of Patent: November 23, 2021Assignee: Univation Technologies, LLCInventors: Ping Cai, Francois Alexandre, Mark G. Goode
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Patent number: 11155664Abstract: Synthesis and characterization of starch based pH-responsive nanoparticles for controlled drug delivery are described. Polymethacrylic acid grafted starch (PMAA-g-St) nanoparticles with various molar ratio of starch to MAA were synthesized by a new one-pot method that enabled simultaneous grafting of PMAA and nanoparticle formation in an aqueous medium. NMR data showed that polysorbate 80 was polymerized into the graft polymer. Nanoparticles were relatively spherical with narrow size distribution and porous surface morphology and exhibited pH-dependent swelling in physiological pH range. The particle size and magnitude of volume phase transition were dependent on PMAA content and formulation parameters such as surfactant levels, cross-linker amount, and total monomer concentration. The results showed that the new pH-responsive nanoparticles possessed useful properties for controlled drug delivery.Type: GrantFiled: December 21, 2018Date of Patent: October 26, 2021Assignee: THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTOInventors: Xiao Yu Wu, Alireza Shalviri, Ping Cai
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Publication number: 20210023200Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.Type: ApplicationFiled: October 1, 2020Publication date: January 28, 2021Applicant: Pfizer Inc.Inventors: Ye Che, Philip Ralph Dormitzer, Alexey Vyacheslavovich Gribenko, Luke David Handke, Avvari Krishna Prasad, Xiayang Qiu, Mark Edward Ruppen, Xi Song, Kena Anne Swanson, Srinivas Kodali, Xin Xu, KariAnn Sweeney Efferen, Ping Cai, Kristin Rachael Tompkins, Lorna del Pilar Nunez
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Patent number: 10821171Abstract: The present disclosure relates to RSV F protein mutants, nucleic acids or vectors encoding a RSV F protein mutant, compositions comprising a RSV F protein mutant or nucleic acid, and uses of the RSV F protein mutants, nucleic acids or vectors, and compositions.Type: GrantFiled: January 8, 2019Date of Patent: November 3, 2020Assignee: Pfizer Inc.Inventors: Ye Che, Philip Ralph Dormitzer, Alexey Vyacheslavovich Gribenko, Luke David Handke, Avvari Krishna Prasad, Xiayang Qiu, Mark Edward Ruppen, Xi Song, Kena Anne Swanson, Srinivas Kodali, Xin Xu, KariAnn Sweeney Efferen, Ping Cai, Kristin Rachael Tompkins, Lorna del Pilar Nunez
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Patent number: 10676589Abstract: Catalyst systems and methods for making and using the same are provided. The catalyst system can include a catalyst support, wherein the catalyst support has an average particle size of about 2 microns to about 200 microns. Nanoparticles are adhered to the catalyst support, wherein the nanoparticles have an average particle size of about 2 to about 200 nanometers. A catalyst is supported on the catalyst support.Type: GrantFiled: March 19, 2019Date of Patent: June 9, 2020Assignee: Univation Technologies, LLCInventors: Yuanqiao Rao, Ping Cai, Kevin J. Cann, F. David Hussein, Wesley R. Mariott, Phuong A. Cao
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Patent number: 10676588Abstract: Catalyst systems and methods for making and using the same are provided. The catalyst system can include a catalyst support, wherein the catalyst support has an average particle size of about 2 microns to about 200 microns. Nanoparticles are adhered to the catalyst support, wherein the nanoparticles have an average particle size of about 2 to about 200 nanometers. A catalyst is supported on the catalyst support.Type: GrantFiled: March 19, 2019Date of Patent: June 9, 2020Assignee: Univation Technologies, LLCInventors: Yuanqiao Rao, Ping Cai, Kevin J. Cann, F. David Hussein, Wesley R. Mariott, Phuong A. Cao
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Patent number: 10647790Abstract: The present invention relates to an improvement for gas-phase olefin polymerization process having relatively high bed bulk density. The improvement involves the use of mixed external electron donors when polymerizing propylene in a gas-phase reactor having a polymer bed with a bulk density greater than 128 kg/m3, optionally with one or more comonomers, wherein the mixed electron donor system comprises at least a first external electron donor and a second external electron donor, and wherein the first external electron donor is a carboxylate compound.Type: GrantFiled: June 30, 2011Date of Patent: May 12, 2020Assignee: W. R. Grace & Co.-Conn.Inventors: Ping Cai, Jan W. Van Egmond, Matthew J. Fedec, Jeffrey D. Goad, Robert C. Brady, III, Linfeng Chen
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Patent number: 10643963Abstract: A semiconductor structure and its fabrication method are provided. The fabrication method includes: providing a base substrate including a wiring region and an isolation region. A patterned layer is formed on the isolation region of the base substrate and the patterned layer exposes the wiring region of the base substrate. After forming the patterned layer, a redistribution layer is formed on the wiring region of the based substrate exposed by the patterned layer. A protective layer is formed on the redistribution layer, and after forming the protective layer, the patterned layer is removed.Type: GrantFiled: June 20, 2018Date of Patent: May 5, 2020Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventor: Feng Ping Cai