Abstract: A processing method for a semiconductor structure is described. First, a substrate is provided. The substrate has a pad region and a fuse region. The substrate has a bond pad already formed in the pad region and a fuse structure already formed in the fuse region. Then, a first testing operation is carried out. Thereafter, a first protection layer is formed on the substrate to cover the pad region and the fuse region. After that, the first protection layer on the bond pad is removed to form a pad opening. Then, a second testing operation is performed.

Abstract: A multi-layer crack stop structure is described, disposed entirely in a die, entirely in a scribe line region outside the die, or partially in the die and partially in the scribe line region. The multi-layer crack stop structure is formed by stacking multiple layers of hollow crack stop units. The multi-layer crack stop structure can effectively prevent some damages like chipping, delamination or peeling-off from occurring to the active circuit region when the wafer is being sawn or when the die is subject to thermal cycles for testing, so that a better die can be obtained and the reliability of the packaged die can be significantly improved.

Abstract: A multi-layer crack stop ring structure disposed between a die seal ring and a scribe line or disposed between a dual die seal ring is provided. The multi-layer crack stop ring structure does not occupy the space of the scribe line. In addition, the multi-layer crack stop ring structure is formed by stacking a plurality of crack stop rings having the same material or by interleavedly stacking multiple layers of the crack stop rings. The multi-layer crack stop ring structure can effectively prevent the damages such as chipping, delamination, or peeling from happening on the scribe line when performing the sawing process, such that a better die can be provided and the reliability of the packed object can be significantly improved.