Abstract: The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.

Abstract: This invention relates to a method and process which dynamically monitors data from an on-going randomized clinical trial associated with a drug, device, or treatment. In one embodiment, the present invention automatically and continuously unblinds the study data without human involvement. In one embodiment, a complete trace of statistical parameters such as treatment effect, trend ratio, maximum trend ratio, mean trend ratio, minimum sample size ratio, confidence interval and conditional power are calculated continuously at all points along the information time. In one embodiment, the invention discloses a graphical user interface-based method and system to early conclude a decision, i.e., futile, promising, sample size re-estimate, for an on-going clinical trial. In one embodiment, exact type I error rate control, median unbiased estimate of treatment effect, and exact two-sided confidence interval can be continuously calculated.

Abstract: A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Abstract: Disclosed are an aluminum nitride-reinforced aluminum matrix composite (AMC) and a preparation method thereof, relating to the technical field of metal matrix composites (MMCs). The aluminum nitride-reinforced AMC includes the following components: Si, Mg, Nb, Zr, Mo, Zn, Ta, Mn, Cu, Co, In, B, Ge, Ir, a rare earth element, Sn, nano-titanium carbide, nano-chromium nitride, an aluminum nitride nanofiber, nano-aluminum nitride, Al, meso-tetramethyl-tetra-(p-aminophenyl) calix[4] pyrrole, sodium silicate, and 1,3,5-triglycidyl-S-triazinetrione.

Abstract: Methods are provided for producing a biaxially oriented nanoporous UHMWPE membrane. The method can include combining a petroleum jelly, an ultra-high-molecular-weight polyethylene (UHMWPE), and an antioxidant, forming a suspension, feeding the suspension into an extruder to produce a gel filament, pressing the gel filament to form a gel film, subjecting the gel film to an annealing temperature, and extracting the petroleum jelly from the gel film.

Abstract: A photolithography method includes: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked, on a photolithography substrate; performing photolithography on the first photoresist layer to obtain a first photolithography structure; etching the reflective auxiliary imaging film layer with the first photolithography structure as a masking layer; on the pattern of the reflective auxiliary imaging film layer, sequentially preparing a second photoresist layer and a transmissive auxiliary imaging film layer which stacked; performing surface plasmon photolithography with the pattern of the reflective auxiliary imaging film layer as a mask, removing the transmissive auxiliary imaging film layer, and then developing the second photoresist layer, to obtain a second photolithography structure; and etching the functional film layer, with the second photolithography structure as a masking layer, to obtain a third photolithography structure.

Abstract: Provided is the use of OXCT1 protein as succinyltransferase. It has been found that the OXCT1 protein serving as succinyltransferase can promote the growth of cancer cells by modulating succinylation modification of protein. Therefore, the design of related enzyme inhibitors can inhibit the activity of succinyltransferase, thereby inhibiting the occurrence and progression of cancer, thereby providing a new concept for targeted therapy.

Abstract: A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: A method for preparing a metal-dielectric strip array based super-resolution lens includes: performing lithography on a first material layer on a first substrate to obtain a grating structure; alternately depositing second and third material layers until the grating structure is filled up, to obtain a first transition structure, one of the second and third material layers being of metal, and the other one being of dielectric; performing planarization on the first transition structure at least reach the top of the grating structure, to obtain a second transition structure; adhering an upper surface of the second transition structure to a second substrate; removing the first substrate, and performing overturning to make the second transition structure be on the second substrate to obtain a third transition structure; and performing planarization again to at least reach the top of finally deposited second or third material layer, to obtain the super-resolution lens.

Abstract: A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Abstract: A photoresist composition is provided, including a chemical amplification matrix, wherein the chemical amplification matrix includes a polymer resin, a photoacid generator and a solvent; and a dissolution inhibitor, which is a small molecular material containing a diazo naphthoquinone structure. A method for using the photoresist composition is further provided.

Abstract: A method for preparing a super-resolution lens based on a metal-dielectric strip array, the method comprising: performing lithography on a first material layer (3) on a first substrate (1) to obtain a grating structure (S1); alternately depositing a second material layer (5) and a third material layer (6) until the grating structure is filled up and becomes even, so as to obtain a first transition structure, wherein one of the second material layer (5) and the third material layer (6) is metal, and the other one is dielectrics (S2); performing planarization on the first transition structure, wherein the planarization depth at least reaches the top of the grating structure, so as to obtain a second transition structure (S3); curing an upper surface of the second transition structure and a second substrate (9) (S4); removing the first substrate (1), so as to transfer the second transition structure onto the second substrate (9) to obtain a third transition structure (S5); and performing planarization again, whe

Abstract: A photolithography method includes: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked, on a photolithography substrate; performing photolithography on the first photoresist layer to obtain a first photolithography structure; etching the reflective auxiliary imaging film layer with the first photolithography structure as a masking layer; on the pattern of the reflective auxiliary imaging film layer, sequentially preparing a second photoresist layer and a transmissive auxiliary imaging film layer which stacked; performing surface plasmon photolithography with the pattern of the reflective auxiliary imaging film layer as a mask, removing the transmissive auxiliary imaging film layer, and then developing the second photoresist layer, to obtain a second photolithography structure; and etching the functional film layer, with the second photolithography structure as a masking layer, to obtain a third photolithography structure.

Abstract: The present disclosure provides a mask topology optimization method for surface plasmon near-field photolithography, comprising: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: An all-solid-state battery system having a solid-state electrolyte composite is provided. The solid-state electrolyte composite includes a porous framework providing support and mechanical strength for the solid-state electrolyte composite and a plurality of ionic conductors filling voids of the porous framework for maximizing ionic conductance of the solid-state electrolyte composite. The porous framework may be made of ultra-high-molecular-weight polyethylene (UHMWPE) polymers and the plurality of ionic conductors may be made of poly(ethylene oxide)-LiN(SO2CF3)2 (PEO-LiTFSI) polymers. The all-solid-state battery system includes battery cells each including a cathode current collector, a cathode disposed beneath and connected to the cathode current collector, the solid-state electrolyte composite disposed beneath and connected to the cathode, an anode disposed beneath and connected to the solid-state electrolyte composite, and an anode current collector disposed beneath and connected to the anode.

Abstract: A superconducting integrated circuit design method based on placement and routing by different-layer JTLs comprises: cutting a bias line at a cell data interface of a cell library, and reserving a position of a via; placing and arranging cells on a logic cell layer according to a schematic circuit logic diagram; connecting clock lines of each of the cells by using a JTL and a splitter of the logic cell layer; and performing data connection on each of the cells by using JTLs of a transverse JTL routing layer and a longitudinal JTL routing layer which are not in the same layer as the logic cell layer, wherein the JTL of the transverse JTL routing layer is used as a transverse routing cell for data between the cells, the JTL of the longitudinal JTL routing layer is used as a longitudinal routing cell for data between the cells.

Abstract: Provided is a multifunctional lithography device, including: a vacuum substrate-carrying stage configured to place a substrate and adsorb the substrate on the vacuum substrate-carrying stage by controlling an airflow, so as to control a gap between the substrate and the mask plate; a mask frame arranged above the vacuum substrate-carrying stage and configured to fix the mask plate; a substrate-carrying stage motion system arranged below the vacuum substrate-carrying stage and configured to adjust a position of the vacuum substrate-carrying stage, so that a distance between the substrate and the mask plate satisfies a preset condition; an ultraviolet light source system arranged above the mask plate and configured to generate an ultraviolet light for lithography; and a three-axis alignment optical path system configured to align the ultraviolet light with the mask plate.

Abstract: In particles removal with extremely high filtration efficiency and the ability to block submicron airborne particles by a sieving mechanism is provided. This novel nanoporous filter advantageously combines extremely high transmittance for visible light and ultraviolet light, reusability after cleaning or disinfection by ultraviolet irradiation or simple washing, a customizable sieving pore size ranging from a few nanometers to 500 nanometers, and the ability to carry bactericidal, virucidal or other reagents or particles on the nano or micro scale.

Abstract: A composite material and methods for making a foldable material are provided. The composite material includes ultra-high molecular weight polyethylene (UHMWPE) and a hard coating material, a portion of the hard coating material being infiltrated into the UHMWPE. The UHMWPE has a highly porous structure of polyethylene and the hard coating material is in a liquid form. The UHMWPE can be formed as a layer on which another portion of the hard coating material is disposed. The layer of UHMWPE has a thickness smaller than 2 ?m, a tensile strength greater than 500 MPa, and the composite has a thickness smaller than 5 ?m, a tensile strength greater than 100 MPa. And the whole composite is crease free after more than 200,000 cycles of folding.

Abstract: Provided is an intelligent correction device control system for a super-resolution lithography precision mask, including: a sixteen-way pneumatic fine-tuning mask deformation control subsystem configured to deform a mask, detect a force value of a mask deformation, compare the force value of the mask deformation with an output force set value, and generate a first control feedback quantity to adjust a force deforming the mask, so as to control a deformation quantity of the mask; and an alignment subsystem configured to acquire images of the mask and a substrate, and adjust a position between the mask and the substrate according to the images, so as to align the mask with the substrate.