Abstract: This application provides a foldable screen control method and an electronic device, and relates to the field of electronic technologies. The method includes: receiving a folding operation performed on a foldable screen, and sending first prompt information in response to a folding sequence anomaly of the foldable screen in response to the folding operation. The foldable screen includes a first screen, a second screen, a third screen, a first folding axis, and a second folding axis. The first folding axis is located between the first screen and the second screen and is configured to allow the first screen to be folded or unfolded relative to the second screen. The second folding axis is located between the second screen and the third screen and is configured to allow the third screen to be folded or unfolded relative to the second screen.

Abstract: A method for making an alloy thin film, includes: providing a reaction chamber, wherein a spraying device and a supporting platform are disposed in the reaction chamber; disposing a pre-processed structure on a surface of the supporting platform; forming an alloy thin film with a characteristic atomic ratio of a first element to an M-th element on a surface of the pre-processed structure, wherein the spraying device is set to have a characteristic temperature, a characteristic distance is set between the spraying device and the supporting platform, a flow-stabilizing device is set to have a characteristic flow, a first precursor to an M-th precursor are introduced into the reaction chamber, and M is an integer greater than or equal to 2; and adjusting the characteristic atomic ratio by adjusting any one or more selected from the group consisting of the characteristic temperature, the characteristic distance, and the characteristic flow.

Abstract: The present disclosure provides an in vitro cell-based potency assay to determine the relative potency of a composition, including a pharmaceutical composition, comprising ActRIIA-Fc fusion protein as compared to a reference sample.

Abstract: An electronic device includes a time of flight (ToF) sensor, a proximity sensor, and an ambient light sensor. The ToF sensor, the proximity sensor, and the ambient light sensor are located on a same side of the electronic device. When the ToF sensor is turned on, a light sensor (for example, the proximity sensor and/or the ambient light sensor) may be controlled to be turned off, and when the ToF sensor is turned off, the light sensor may be controlled to be turned on. Alternatively, when the ToF sensor is turned on, data measured by a light sensor is discarded, and when the ToF sensor is turned off, a corresponding function is implemented based on data measured by the light sensor.

Abstract: A sensor adjustment method includes obtaining a folding status parameter, where the folding status parameter is used to describe a folding extent of a foldable device, and where a component of the foldable device in a folded state causes interference to a first sensor of the foldable device compared with a non-folded state; invoking a sensor adjustment corresponding to the folding status parameter; and adjusting a sensor operating parameter of the first sensor according to the sensor adjustment and/or performing data preprocessing on first sensor data collected by the first sensor.

Abstract: The disclosure describes methods for measuring the potency of anti-Respiratory Syncytial Virus (RSV) antibody against respiratory syncytial virus in a cell culture system using an RSV reporter virus. The disclosure also describes respiratory syncytial viruses that carry a reporter gene, and expression vectors for producing an infectious recombinant respiratory syncytial virus (RSV) that carry a reporter gene.

Abstract: A sensor adjustment method includes obtaining a folding status parameter, where the folding status parameter is used to describe a folding extent of a foldable device, and where a component of the foldable device in a folded state causes interference to a first sensor of the foldable device compared with a non-folded state; invoking a sensor adjustment corresponding to the folding status parameter; and adjusting a sensor operating parameter of the first sensor according to the sensor adjustment and/or performing data preprocessing on first sensor data collected by the first sensor.

Abstract: An electronic device includes a time of flight (ToF) sensor, a proximity sensor, and an ambient light sensor. The ToF sensor, the proximity sensor, and the ambient light sensor are located on a same side of the electronic device. When the ToF sensor is turned on, a light sensor (for example, the proximity sensor and/or the ambient light sensor) may be controlled to be turned off, and when the ToF sensor is turned off, the light sensor may be controlled to be turned on. Alternatively, when the ToF sensor is turned on, data measured by a light sensor is discarded, and when the ToF sensor is turned off, a corresponding function is implemented based on data measured by the light sensor.

Abstract: A method for preparing a GaN substrate material includes: performing in-situ epitaxy on a Ga2O3 thin film and a GaN thin film in a multifunctional HVPE growth system. First, the Ga2O3 thin film is grown on a substrate such as sapphire by an HVPE-like method, and the Ga2O3 is nitrided in an ammonia gas atmosphere to form a GaN/Ga2O3 composite thin film. Then, a GaN thick film is grown on the GaN/Ga2O3 composite thin film by HVPE to obtain a high-quality GaN thick film material. The Ga2O3 layer is removed by chemical etching to obtain a self-supporting GaN substrate material. Or, the conventional laser lift-off method is used to separate the GaN thick film from the heterogeneous substrate such as the sapphire to obtain a GaN self-supporting substrate material.

Abstract: The present invention provides a method for removing burrs of battery electrode plates using inductively coupled plasma (ICP) dry etching, in which an induction coil is used for ionizing reaction gas. A DC bias is applied to accelerate the ionized reaction gas to bombard the burrs of electrode plate, removing burrs that formed in machining processes using physical bombardment. The equipment used in the present invention is an ICP etch system. The method according to the present invention can completely remove the burrs of electrode plate, thereby effectively preventing short circuits caused by burrs penetrating the membrane separator in the battery.

Abstract: An electronic device includes a housing defining a hole and a button structure. The button structure includes a button cap passing through the hole and an elastic member. The elastic member includes a first connection part, a second connection part, and a body. The first connection part and the second connection part are connected via the body, the first connection part is connected to the housing, and the second connection part is connected to the button cap.

Abstract: The present invention provides a method for removing burrs of battery electrode plates using inductively coupled plasma (ICP) dry etching, in which an induction coil is used for ionizing reaction gas. A DC bias is applied to accelerate the ionized reaction gas to bombard the burrs of electrode plate, removing burrs that formed in machining processes using physical bombardment. The equipment used in the present invention is an ICP etch system. The method according to the present invention can completely remove the burrs of electrode plate, thereby effectively preventing short circuits caused by burrs penetrating the membrane separator in the battery.

Abstract: An electronic device includes a first housing defining a first hole, a second housing, a camera, and a camera shelter. The second housing includes a receiving part and a fixing part. The camera is fixed to the second housing. The camera shelter includes a body, an operation part, and a connection part. The body and the operation part are received in the receiving part. The connection part engages the fixing part to connect the camera shelter to the second housing. The body is sandwiched between the first housing and the second housing. When the operation part positions in a first position, the first hole defined in the first housing overlaps a second hole defined on the body to expose the camera. When the operation part is moved to a second position, the body of the camera shelter shelters the camera.

Abstract: An electronic device includes a first housing defining a first hole, a second housing, a camera, and a camera shelter. The second housing includes a receiving part and a fixing part. The camera is fixed to the second housing. The camera shelter includes a body, an operation part, and a connection part. The body and the operation part are received in the receiving part. The connection part engages the fixing part to connect the camera shelter to the second housing. The body is sandwiched between the first housing and the second housing. When the operation part positions in a first position, the first hole defined in the first housing overlaps a second hole defined on the body to expose the camera. When the operation part is moved to a second position, the body of the camera shelter shelters the camera.

Abstract: An electronic device includes a housing defining a hole and a button structure. The button structure includes a button cap passing through the hole and an elastic member. The elastic member includes a first connection part, a second connection part, and a body. The first connection part and the second connection part are connected via the body, the first connection part is connected to the housing, and the second connection part is connected to the button cap.

Abstract: A kind of growth method of Fe3Nin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films are obtained.

Abstract: The electronic device includes a body, a strap, and a strap connecting member. The strap connecting member further includes a pin, a torsion spring one end of which is connected to the pin, a receiving chamber accommodating the pin and defining an opening notch passing through the sidewall thereof, and a cover connected with the torsion spring and engaging with the receiving chamber. The strap is double-layered. The double-layered strap forms a folded end and an open end, the folded end is connected with the pin and is wrapped around the pin, and the open end is separated into two portions which pass at the opening notch and are respectively connected to the body. When the torsion spring is elastically deformed and generates a torsion force, the pin is rotated and the strap automatically shrinks in the receiving chamber under the torsion force.

Abstract: The electronic device includes a body, a strap, and a strap connecting member. The strap connecting member further includes a pin, a torsion spring one end of which is connected to the pin, a receiving chamber accommodating the pin and defining an opening notch passing through the sidewall thereof, and a cover connected with the torsion spring and engaging with the receiving chamber. The strap is double-layered. The double-layered strap forms a folded end and an open end, the folded end is connected with the pin and is wrapped around the pin, and the open end is separated into two portions which pass at the opening notch and are respectively connected to the body. When the torsion spring is elastically deformed and generates a torsion force, the pin is rotated and the strap automatically shrinks in the receiving chamber under the torsion force.

Abstract: A wearable device includes a housing, a circuit board, a strap, and two antennas. The housing defines a receiving space. The receiving space includes two sidewalls each defining a through hole. The circuit board is received in the receiving space. The strap defines two slots respectively adjacent to the sidewalls. The antennas extend from the circuit board and are electrically connected to the circuit board. Each of the antennas is received in a corresponding slot.

Abstract: A kind of growth method of Fe3N, and the growth is in the MOCVD system, including following process: 1). the surface nitridation of sapphire substrate would be made; 2). pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3). the temperature would be raised and grow the GaN supporting layer; 4). pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films could be obtained. The invention realizes growing high quality Fe3N film. According to the problem of growing material with difficulty, the problems are solved by controlling and adjusting the conditions for the flux of organic gallium source and iron source, growth temperature, growth time, the flux of ammonia, and mole ratio of N and Ga. In the invention, the method is easy, the growth process could be controlled, and thus the growth method and the process control of growth technology have advancement.