Abstract: Embodiments of present invention provide a magnetic tunnel junction (MTJ) structure. The MTJ structure includes a MTJ stack, the MTJ stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, wherein the free layer includes multiple sub free layers, the multiple sub free layers being multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the multiple ferromagnetic strips having respective first ends connected to a first electrode and respective second ends connected to a second electrode. A method of forming the MTJ structure is also provided.

Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.

Abstract: The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

Abstract: An integrated circuit includes a field effect transistor (FET) and a phase change memory (PCM) cell. The PCM cell includes a heater, wherein a bottom surface of the heater is at or below a top surface of the FET.

Abstract: A method for power saving and encryption during analysis of media captured by an information capture device using a partitioned neural network includes replicating, by an information capture device, an artificial neural network (ANN) from a computer server to the information capture device. The ANN on the computer server and a replicated ANN, both, include M layers. The method further includes, in response to captured data being input to be processed, partially processing, by the information capture device, the captured data by executing a first k layers using the replicated ANN, wherein only the k layers are selected to execute on the information capture device. The method further includes transmitting, by the information capture device, an output of the k-th layer to the computer server, which partially processes the captured data by executing the remainder of the M layers using the ANN and the output of the k-th layer.

Abstract: A semiconductor integrated circuit device includes: an active bridge; a first chiplet and a second chiplet mounted onto the active bridge; and a short-to-long converter circuit (SLCC) that has analog and digital portions. The active bridge includes at least the analog portion of the SLCC, which is electrically connected to at least the first chiplet; and a short-reach physical layer that electrically connects the first chiplet and the second chiplet. The first chiplet includes a first logic core; a first chiplet interface that is electrically connected between the first logic core and the SLCC; and a second chiplet interface that is electrically connected between the first logic core and the second chiplet. The second chiplet includes a second logic core; and a third chiplet interface that is electrically connected between the second logic core and the second chiplet interface. The active bridge also can include a built-in-self-test (BIST) circuit.

Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Abstract: A method for producing a cannabinoid precursor by contacting a substrate and geranyl pyrophosphate or farnesyl pyrophosphate with an NphB orthologue. The NphB orthologue is from an organism other than Cannabis sativa, and the substrate can be 2,4-dihydroxy-6-pentylbenzoic acid or 2,4-dihydroxy-6-propylbenzoic acid. Also disclosed is a recombinant cell of Yarrowia lipolytica, carrying in its genome a nucleic acid encoding an NphB orthologue from an organism other than Cannabis sativa such that the NphB orthologue is expressed in the recombinant cell.

Abstract: Disclosed is a prediction method for tool remaining life of a numerical control machine tool based on a hybrid neural model, including: constructing a hybrid neural network model, specifically including the following steps: constructing sample data according to the sampling frequency of tool data; obtaining a first feature vector representing the tool life by utilizing a convolutional neural network and a long short-term memory network; generating working condition signals of sampling points into a second feature vector representing the tool life by utilizing an NFM neural network; and inputting a current working time of a tool and the acquired feature vectors into a multi-layer perceptron for fusion to predict the tool life.

Abstract: The present invention features compositions and methods featuring ALT-803, a complex of an interleukin-15 (IL-15) superagonist mutant and a dimeric IL-15 receptor ?/Fc fusion protein useful for enhancing an immune response against a neoplasia (e.g., multiple myeloma, melanoma, lymphoma) or a viral infection (e.g., human immunodeficiency virus).

Abstract: A structure including alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A structure including horizontally aligned alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A method including forming alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate and separated from the first sub gate structure. The first sub gate structure and the first insulation structure are disposed on the first drift region. The first spacer structure is disposed on a sidewall of the gate structure. The second spacer structure is disposed on a sidewall of the first sub gate structure. At least a part of the first insulation structure is located between the first spacer structure and the second spacer structure. The first insulation structure is directly connected with the first drift region located between the first spacer structure and the second spacer structure.

Abstract: A laser machining device includes a pulsed laser generator, an accommodation chamber, a bandwidth broadening unit and a pulse compression unit. The pulsed laser generator is configured to emit a pulsed laser. The accommodation chamber has a gas inlet. The bandwidth broadening unit is disposed in the accommodation chamber, and is configured to broaden a frequency bandwidth of the pulsed laser to obtain a broad bandwidth pulsed laser. The pulse compression unit is disposed in the accommodation chamber. The bandwidth broadening unit and the pulse compression unit are arranged in order along a laser propagation path, and the pulse compression unit is configured to compress a pulse duration of the broad bandwidth pulsed laser.

Abstract: A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.

Abstract: A phase change memory cell for a semiconductor device that includes a heater element on a first conductive layer with a spacer surrounding sides of the heater element. The phase change memory cell includes a first dielectric layer on the conductive layer and on a bottom portion of the spacer surrounding the heater element and a second dielectric layer on the first dielectric layer surrounding a top portion of the heater element. The phase change memory cell includes a phase change material on a top surface of the heater element and on the second dielectric material.

Abstract: A rehabilitation device includes a base unit, a circuit unit, a rolling unit, and a holding unit. The circuit unit includes a distance measuring element, which is partially exposed on a bottom surface of the base unit and can measure the moving distance of the base unit after the base unit contacts a plane. The rolling unit includes a plurality of rollers partially protruding from the base unit, a driving member, and at least one auxiliary wheel driven by the driving member. The rollers are continuously in contact with the plane, and the auxiliary wheel is driven to contact the plane. The rollers can make the base unit slide, allowing the user to stretch their upper limbs by themselves. When the user moves to his own limit position, the auxiliary wheel can be driven to gradually increase the moving distance of the base unit, so that the upper limb can be continuously stretched, and the limit of the extension distance and joint movement angle of the upper limb can be gradually increased.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.

Abstract: Memory cells and methods of forming the same include forming a hole in an interlayer dielectric to expose an end of a conductive top electrode. A phase change material is conformally deposited on surfaces of the hole. A remaining portion of the hole is filled with a dielectric material after conformally depositing the phase change material.

Abstract: A vacuum arc thruster with multi-layer insulation includes a housing, an anode unit and a cathode unit spaced apart from each other in the housing, and an insulator disposed between the anode unit and the cathode unit. The insulator includes a plurality of fuel layers and a plurality of insulating layers. Each insulating layer is located between every two adjacent fuel layers. Accordingly, a multiple-layer design is formed by arranging the fuel layers and the insulating layers which are made of different materials in an alternating manner, thereby attaining the maximum field emission effect, increasing the stability and efficacy of operating the vacuum arc thruster, and prolonging the service life of the thruster.