Abstract: A semiconductor integrated circuit device includes: an active bridge; a first chiplet and a second chiplet mounted onto the active bridge; and a short-to-long converter circuit (SLCC) that has analog and digital portions. The active bridge includes at least the analog portion of the SLCC, which is electrically connected to at least the first chiplet; and a short-reach physical layer that electrically connects the first chiplet and the second chiplet. The first chiplet includes a first logic core; a first chiplet interface that is electrically connected between the first logic core and the SLCC; and a second chiplet interface that is electrically connected between the first logic core and the second chiplet. The second chiplet includes a second logic core; and a third chiplet interface that is electrically connected between the second logic core and the second chiplet interface. The active bridge also can include a built-in-self-test (BIST) circuit.

Abstract: The present invention features compositions and methods featuring ALT-803, a complex of an interleukin-15 (IL-15) superagonist mutant and a dimeric IL-15 receptor ?/Fc fusion protein useful for enhancing an immune response against a neoplasia (e.g., multiple myeloma, melanoma, lymphoma) or a viral infection (e.g., human immunodeficiency virus).

Abstract: A structure including alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A structure including horizontally aligned alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A method including forming alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode.

Abstract: A laser machining device includes a pulsed laser generator, an accommodation chamber, a bandwidth broadening unit and a pulse compression unit. The pulsed laser generator is configured to emit a pulsed laser. The accommodation chamber has a gas inlet. The bandwidth broadening unit is disposed in the accommodation chamber, and is configured to broaden a frequency bandwidth of the pulsed laser to obtain a broad bandwidth pulsed laser. The pulse compression unit is disposed in the accommodation chamber. The bandwidth broadening unit and the pulse compression unit are arranged in order along a laser propagation path, and the pulse compression unit is configured to compress a pulse duration of the broad bandwidth pulsed laser.

Abstract: A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.

Abstract: A phase change memory cell for a semiconductor device that includes a heater element on a first conductive layer with a spacer surrounding sides of the heater element. The phase change memory cell includes a first dielectric layer on the conductive layer and on a bottom portion of the spacer surrounding the heater element and a second dielectric layer on the first dielectric layer surrounding a top portion of the heater element. The phase change memory cell includes a phase change material on a top surface of the heater element and on the second dielectric material.

Abstract: A rehabilitation device includes a base unit, a circuit unit, a rolling unit, and a holding unit. The circuit unit includes a distance measuring element, which is partially exposed on a bottom surface of the base unit and can measure the moving distance of the base unit after the base unit contacts a plane. The rolling unit includes a plurality of rollers partially protruding from the base unit, a driving member, and at least one auxiliary wheel driven by the driving member. The rollers are continuously in contact with the plane, and the auxiliary wheel is driven to contact the plane. The rollers can make the base unit slide, allowing the user to stretch their upper limbs by themselves. When the user moves to his own limit position, the auxiliary wheel can be driven to gradually increase the moving distance of the base unit, so that the upper limb can be continuously stretched, and the limit of the extension distance and joint movement angle of the upper limb can be gradually increased.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.

Abstract: Memory cells and methods of forming the same include forming a hole in an interlayer dielectric to expose an end of a conductive top electrode. A phase change material is conformally deposited on surfaces of the hole. A remaining portion of the hole is filled with a dielectric material after conformally depositing the phase change material.

Abstract: A vacuum arc thruster with multi-layer insulation includes a housing, an anode unit and a cathode unit spaced apart from each other in the housing, and an insulator disposed between the anode unit and the cathode unit. The insulator includes a plurality of fuel layers and a plurality of insulating layers. Each insulating layer is located between every two adjacent fuel layers. Accordingly, a multiple-layer design is formed by arranging the fuel layers and the insulating layers which are made of different materials in an alternating manner, thereby attaining the maximum field emission effect, increasing the stability and efficacy of operating the vacuum arc thruster, and prolonging the service life of the thruster.

Abstract: Disclosed herein are conditional siRNAs activatable by CBF?-MYH11 oncogenic gene and use thereof for treating conditions such as acute myeloid leukemia (AML). The conditional siRNAs target MCL-1 or HDAC8.

Abstract: The present invention features compositions and methods featuring ALT-803, a complex of an interleukin-15 (IL-15) superagonist mutant and a dimeric IL-15 receptor ?/Fc fusion protein useful for enhancing an immune response against a neoplasia (e.g., multiple myeloma, melanoma, lymphoma) or a viral infection (e.g., human immunodeficiency virus).

Abstract: The disclosure describes methods for measuring the potency of anti-Respiratory Syncytial Virus (RSV) antibody against respiratory syncytial virus in a cell culture system using an RSV reporter virus. The disclosure also describes respiratory syncytial viruses that carry a reporter gene, and expression vectors for producing an infectious recombinant respiratory syncytial virus (RSV) that carry a reporter gene.

Abstract: A structure comprising a top electrode and a bottom electrode. The structure further comprises a multilayer stack disposed between the top electrode and the bottom electrode, where the multilayer stack comprises alternating confinement layers and phase-change material layers, and where at least two of the phase-change material layers have different doping concentrations of at least one dopant.

Abstract: A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode. A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode, where the inner electrode and the outer electrode are on the same horizontal plane. A method including forming an inner electrode and an outer electrode simultaneously on a substrate, forming a phase change material layer above both the inner electrode and the outer electrode.

Abstract: A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.

Abstract: The instant invention provides soluble fusion protein complexes and IL-15 variants that have therapeutic and diagnostic use, and methods for making the proteins. The instant invention additionally provides methods of stimulating or suppressing immune responses in a mammal using the fusion protein complexes and IL-15 variants of the invention.

Abstract: A sensor adjustment method includes obtaining a folding status parameter, where the folding status parameter is used to describe a folding extent of a foldable device, and where a component of the foldable device in a folded state causes interference to a first sensor of the foldable device compared with a non-folded state; invoking a sensor adjustment corresponding to the folding status parameter; and adjusting a sensor operating parameter of the first sensor according to the sensor adjustment and/or performing data preprocessing on first sensor data collected by the first sensor.

Abstract: A video encoding apparatus includes a content activity analyzer circuit and a video encoder circuit. The content activity analyzer circuit applies a content activity analysis process to consecutive frames, to generate content activity analysis results. The consecutive frames are derived from input frames of the video encoding apparatus. The content activity analysis process includes: deriving a first content activity analysis result according to a first frame and a second frame in the consecutive frames, wherein the first content activity analysis result includes a processed frame distinct from the second frame; and deriving a second content activity analysis result according to a third frame included in the consecutive frames and the processed frame. The video encoder circuit performs a video encoding process to generate a bitstream output of the video encoding apparatus, wherein information derived from the content activity analysis results is referenced by the video encoding process.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.