Abstract: A cable arrangement mechanism is provided, which is disposed inside the housing of an electronic device. The cable arrangement mechanism includes a first tube, a second tube, and a plurality of first resilient elements. The first tube includes a first base, a first extension connected to the first base and extending from a first inner surface, and a first extrusion connected to the first base and extending from a first outer surface. The second tube includes a second base, a second extension connected to the second base and extending from a second inner surface, and a second extrusion connected to the second base and extending from a second outer surface. The first resilient elements respectively connect the first extrusion and the second extrusion to the housing, so that the first tube and the second tube are rotatably connected to the housing.

Abstract: A connector includes a housing, a circuit board inserted into the housing and having a plurality of first terminals located on a pair of opposite sides of the circuit board at a rear end of the circuit board, a plurality of wires including a plurality of connecting terminals that are each electrically connected to one of the first terminals, and a fixing mechanism mounted in the housing and fixing the wires on the circuit board. The connecting terminals and the first terminals are exposed outside the fixing mechanism.

Abstract: A cable arrangement mechanism is provided, which is disposed inside the housing of an electronic device. The cable arrangement mechanism includes a first tube, a second tube, and a plurality of first resilient elements. The first tube includes a first base, a first extension connected to the first base and extending from a first inner surface, and a first extrusion connected to the first base and extending from a first outer surface. The second tube includes a second base, a second extension connected to the second base and extending from a second inner surface, and a second extrusion connected to the second base and extending from a second outer surface. The first resilient elements respectively connect the first extrusion and the second extrusion to the housing, so that the first tube and the second tube are rotatably connected to the housing.

Abstract: An employee data replication system receives a request to replicate employee data hosted by a host system. At least one of: a live date corresponding to when the employee data is to be live on the enterprise system or a selection of one or more applications to be used on the enterprise system is identified. A cutoff date for the employee data is calculated based on one or more of the live date and the selection of one or more applications, the cutoff date indicating an oldest date for which the employee data is to be replicated to the enterprise system. Employee data is replicated from the host system to the enterprise system based on the cutoff date, and an indication is provided that the replication has completed.

Abstract: A semiconductor structure includes a semiconductor substrate, a metal gate structure disposed over the semiconductor substrate, an ILD structure over the semiconductor substrate and surrounding the metal gate structure, and a protecting layer over the ILD structure. A top surface of the protecting layer is aligned with a top surface of the metal gate structure. The protecting layer is separated from the metal gate structure.

Abstract: Disclosed herein are various embodiments for an employee data replication system. An embodiment operates by receiving a request to replicate employee data hosted by a host system. At least one of: a live date corresponding to when the employee data is to be live on the enterprise system or a selection of one or more applications to be used on the enterprise system is identified. A cutoff date for the employee data is calculated based on one or more of the live date and the selection of one or more applications, the cutoff date indicating an oldest date for which the employee data is to be replicated to the enterprise system. Employee data is replicated from the host system to the enterprise system based on the cutoff date, and an indication is provided that the replication has completed.

Abstract: A circuit board assembly includes a circuit board, a plurality of cables soldered to a side of the circuit board, a protective member covering a plurality of solder joints of the cables on the circuit board, and a retainer provided on the side of the circuit board. The retainer fixes the protective member on the circuit board.

Abstract: One or more methods of forming shallow trench isolation (STI) and resulting semiconductor arraignments are provided. A method of forming STI includes forming a nitride liner in a first opening and second opening and recessing the nitride liner in the first opening and second opening while forming an oxide structure in the first opening and second opening, thus forming a first STI region in the first opening and a second STI region in the second opening. A semiconductor arraignment includes a first STI region in an active area and a second STI region in an isolation area, where a first recessed nitride layer height in the first STI region is different than a second recessed nitride layer height in the second STI region.

Abstract: Providing for single and multi-bit error correction of electronic memory is described herein. As an example, error correction can be accomplished by establishing a suspect region between bit level distributions of a set of analyzed memory cells. The suspect region can define potential error bits for the distributions. If a bit error is detected for the distributions, error correction can first be applied to the potential error bits in the suspect region. By identifying suspected error bits and limiting initial error correction to such identified bits, complexities involved in applying error correction to all bits of the distributions can be mitigated or avoided, improving efficiency of bit error corrections for electronic memory.

Abstract: One or more methods of forming shallow trench isolation (STI) and resulting semiconductor arraignments are provided. A method of forming STI includes forming a nitride liner in a first opening and second opening and recessing the nitride liner in the first opening and second opening while forming an oxide structure in the first opening and second opening, thus forming a first STI region in the first opening and a second STI region in the second opening. A semiconductor arraignment includes a first STI region in an active area and a second STI region in an isolation area, where a first recessed nitride layer height in the first STI region is different than a second recessed nitride layer height in the second STI region.

Abstract: Providing for single and multi-bit error correction of electronic memory is described herein. As an example, error correction can be accomplished by establishing a suspect region between bit level distributions of a set of analyzed memory cells. The suspect region can define potential error bits for the distributions. If a bit error is detected for the distributions, error correction can first be applied to the potential error bits in the suspect region. By identifying suspected error bits and limiting initial error correction to such identified bits, complexities involved in applying error correction to all bits of the distributions can be mitigated or avoided, improving efficiency of bit error corrections for electronic memory.

Abstract: An accumulative repeat encoder facilitates encoding data written to memory, such that parity data is generated in accordance with a low-density parity-check (LDPC) code. The original data and associated parity data is stored in memory. During a read operation, a decoder component utilizes the parity data based on the LDPC code to facilitate decoding the data being read from memory. The decoder component is iterative and provides one or more decoding results based on probabilities that symbols or bits comprising the data have correct values. The decoder component analyzes a decoding result and references a parity-check matrix structured in accordance with the LDPC code to determine the accuracy of the decoding result. If the decoding result attains a desired accuracy, the decoding result is determined to represent the original data and is provided as an output.

Abstract: Providing for single and multi-bit error correction of electronic memory is described herein. As an example, error correction can be accomplished by establishing a suspect region between bit level distributions of a set of analyzed memory cells. The suspect region can define potential error bits for the distributions. If a bit error is detected for the distributions, error correction can first be applied to the potential error bits in the suspect region. By identifying suspected error bits and limiting initial error correction to such identified bits, complexities involved in applying error correction to all bits of the distributions can be mitigated or avoided, improving efficiency of bit error corrections for electronic memory.

Abstract: A device, system and method in which data in a write cache, that must at some point be written to non-volatile memory, is written to non-volatile memory after expiration of a threshold time period during which no new host commands are received. If either the last dirty entry is written back or a host command is received during the write-back process, the time threshold time period and auto-flush process is restarted.

Abstract: Systems and methods for improving the performance and reliability of flash memory solid state drive devices are described herein. A flash memory array component stores data. A memory hierarchy component transfers data between the host and the flash memory array component. The memory hierarchy component includes a level one (“L1”) cache coupled to a merge buffer, the flash memory array component, and the host. The merge buffer is coupled to the flash memory array component. The L1 cache and merge buffer include volatile memory, and the host is coupled to the merge buffer and flash memory array component. The memory hierarchy component includes a write component and a read component. The write component writes data to at least one of the L1 cache, merge buffer, or flash memory array component. The read component reads data from at least one of the L1 cache, merge buffer, or flash memory array component.

Abstract: Systems and methods for identifying error bits in encoded data are disclosed. As a part of identifying error bits, encoded data that is provided from a data source and that includes data and parity check portions is accessed. Based on the encoded data, syndromes are calculated, and based on the calculated syndromes, an equation is determined. The roots of the equation are determined and based on the determined roots of the equation, one or more error bits are identified. The error bits are identified using a circuit that presents a binary representation of the roots. The error bits are corrected based on the error bits that are identified.

Abstract: A LED system and driving device with error detection and an error detection module thereof is disclosed. In which, through the detection of the error detection module, the errors associated with the LED module and the driving circuit may be detected. If the errors are detected, the error detection module may output a determination signal to the control unit so that the LED system could be protected from damages.

Abstract: A lighting assembly is adapted to be connected to at least one conductive connection hole of an illumination device. The lighting assembly comprises at least one lighting cell and connection mechanism, wherein the lighting cell comprises a base, at least one electrical connector and a lighting unit. The electrical connector and the lighting unit are connected to the base, and electrically connected with each other. The lighting unit has a plurality of lighting circuits linearly arranged thereon, and one end of the connection mechanism is electrically connected to the electrical connector. When the lighting assembly only comprises one lighting cell, the other end of the connection mechanism is connected to the electrode connection hole; while when the lighting assembly comprises a plurality of said lighting cells, the other end of the connection mechanism is selectively connected to the conductive connection hole and the other electrical connector of the neighbor lighting cell.

Abstract: A device, system and method in which data in a write cache, that must at some point be written to non-volatile memory, is written to non-volatile memory after expiration of a threshold time period during which no new host commands are received. If either the last dirty entry is written back or a host command is received during the write-back process, the time threshold time period and auto-flush process is restarted.

Abstract: A superconducting article is provided that includes a substrate, an anti-epitaxial film over the substrate, a buffer film having biaxial crystal texture over the anti-epitaxial film, and a superconductor layer over the second buffer film. Also provided is a superconducting article as a tape, in a power cable, and a power transformer.