Abstract: A microelectronic device includes a semiconductor base structure, word lines, digit line contacts, digit lines, and storage node contacts. The semiconductor base structure includes pillar structures horizontally separated from one another by filled isolation trenches. The word lines horizontally extend through the pillar structures and the filled isolation trenches in a first direction. The digit line contacts include conductively doped semiconductor material vertically extending into digit line contact sections of the pillar structures. The digit lines are over and in contact with the digit line contacts and horizontally extend in a second direction orthogonal to the first direction. The digit lines have a different material composition than the digit line contacts. The storage node contacts include additional conductively doped semiconductor material vertically extending into storage node contact sections of the pillar structures. Methods, memory devices, and electronic systems are also described.

Abstract: A memory cell with a recessed gate includes a semiconductor substrate, a shallow trench isolation, an active region, a gate electrode, a halogen-doped dielectric layer and at least a capacitor. The shallow trench isolation is disposed in the semiconductor substrate in order to define the active region. A source region and a drain region are respectively disposed on each end of the active region along a first direction. A gate trench is formed in the semiconductor substrate between the source region and the drain region, wherein the gate trench includes a sidewall portion and a curved-bottom surface. The curved-bottom surface has a convex profile when viewed from a cross-sectional view taken along a second direction perpendicular to the first direction. The gate electrode is disposed in the gate trench and the halogen-doped dielectric layer is disposed between the gate electrode and the semiconductor substrate.

Abstract: A memory cell with a recessed gate includes a semiconductor substrate, a shallow trench isolation, an active region, a gate electrode, a halogen-doped dielectric layer and at least a capacitor. The shallow trench isolation is disposed in the semiconductor substrate in order to define the active region. A source region and a drain region are respectively disposed on each end of the active region along a first direction. A gate trench is formed in the semiconductor substrate between the source region and the drain region, wherein the gate trench includes a sidewall portion and a curved-bottom surface. The curved-bottom surface has a convex profile when viewed from a cross-sectional view taken along a second direction perpendicular to the first direction. The gate electrode is disposed in the gate trench and the halogen-doped dielectric layer is disposed between the gate electrode and the semiconductor substrate.

Abstract: A computer system may manage orders for goods from a plurality of purchasers. The computer system may receive the orders, calculate an approximate volume that the goods which are the subject of each order would collectively occupy during shipment, and compare each calculated approximate volume to a pre-determine maximum allowed volume that the purchaser of the order is permitted. The computer system may accept each order whose approximate volume does not exceed the maximum allowed volume for the purchaser of the order, or reject each order whose approximate volume exceeds this maximum allowed volume.

Abstract: A computer system may manage orders for goods from a plurality of purchasers. The computer system may receive the orders, calculate an approximate volume that the goods which are the subject of each order would collectively occupy during shipment, and compare each calculated approximate volume to a pre-determine maximum allowed volume that the purchaser of the order is permitted. The computer system may accept each order whose approximate volume does not exceed the maximum allowed volume for the purchaser of the order, or reject each order whose approximate volume exceeds this maximum allowed volume.