Abstract: Provided are a data current generation circuit, a driving method therefor, a driver chip, and a display panel, where a threshold capture module of the data current generation circuit is connected between a gate and a second electrode of a first transistor and is configured to capture a threshold voltage of the first transistor, a data voltage generation module is configured to generate a data voltage, a data voltage transmission module is connected between the data voltage generation module and a threshold voltage acquisition and superposition module and is configured to transmit the data voltage generated by the data voltage generation module to the threshold voltage acquisition and superposition module when the data voltage transmission module is turned on, and the threshold voltage acquisition and superposition module is configured to acquire the threshold voltage of the first transistor.

Abstract: A display apparatus includes a first circuit board and a plurality of first light emitting display units. The first circuit board has a first surface and a first board edge connected to the first surface. The first light emitting display units are disposed on the first surface. Each of the first light emitting display units has a plurality of first pixel areas and includes a first driving circuit layer electrically bonded to the first circuit board and a plurality of first light emitting devices. The first light emitting devices are disposed on one side of the first driving circuit layer away from the first circuit board and are electrically bonded to the first driving circuit layer. At least one of the first light emitting display units has a first side edge parallel to the first board edge. The first board edge is drawn back from the first side edge.

Abstract: A memory structure including a substrate, a bit line structure, a contact structure, a stop layer, and a capacitor structure is provided. The substrate includes a memory array region. The bit line structure is located in the memory array region and located on the substrate. The contact structure is located in the memory array region and located on the substrate on one side of the bit line structure. The stop layer is located in the memory array region and located above the bit line structure. The capacitor structure is located in the memory array region. The capacitor structure passes through the stop layer and is electrically connected to the contact structure. A bottom surface of the capacitor structure is lower than a bottom surface of the stop layer.

Abstract: A fan frame with an improved heat dissipation performance includes a frame body, a plurality of stationary blades, and a central base. The frame body defines a flow channel, the central base is arranged within the flow channel and divides the flow channel into flowing zones. Each of the flowing zone includes a high-pressure zone and a low-pressure zone. The central base defines first slot, second slot and receiving groove between the first slot and the second slot, the first slot communicates the high-pressure zone and the receiving groove, the second slot communicates the low-pressure zone and the receiving groove.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.

Abstract: A switchable floating image display device, including a light-emitting stack layer, a light-emitting pattern stack layer, a transparent barrier layer, an optical imaging module, and a power supply module, is provided. The light-emitting stack layer is configured to generate a first pattern beam. The light-emitting pattern stack layer is configured to generate a second pattern beam. The transparent barrier layer is disposed between the light-emitting stack layer and the light-emitting pattern stack layer. The optical imaging module is configured to enable the first pattern beam to form a first floating image, and enable the second pattern beam to form a second floating image. The power supply module is electrically connected to the light-emitting stack layer and the light-emitting pattern stack layer, and configured determine whether to generate the first or second floating image by switching between the light-emitting stack layer and the light-emitting pattern stack layer to emit light.

Abstract: A method of fabricating a solid-state image sensor, including steps of forming a second type doped semiconductor layer and a semiconductor material layer sequentially on a first type doped semiconductor substrate to constitute a photoelectric conversion portion, forming a multilayer structure on the semiconductor material layer, wherein a refractive index of the multilayer structure gradually decreases from a bottom layer to a top layer of the multilayer structure and is smaller than a refractive index of the semiconductor material layer, and performing a photolithography process to the multiplayer structure and the photoelectric conversion portion to form multiple micro pillars, wherein the micro pillars protrude from the semiconductor material layer and are isolated by recesses extending into the photoelectric conversion portion.

Abstract: A fan module including a first body, a second body, a first fan assembly, a power module, and a second fan assembly is provided. The second body is slidably disposed at the first body to form a circulation space together. The first fan assembly is rotatably disposed at the first body and has sliding grooves. The power module is disposed in the first body and connected to the first fan assembly. The second fan assembly is rotatably disposed at the second body and has sliding portions, respectively and slidably disposed in corresponding sliding grooves. The power module is adapted to drive the first and second fan assemblies to rotate relative to the first body. A link module is adapted to drive the first and second bodies to relatively slide along an axial direction, so that the first and second fan assemblies are relatively separated or overlapped along the axial direction.

Abstract: A method according to the present disclosure includes receiving a workpiece that includes a gate structure, a first gate spacer feature, a second gate spacer feature, a gate-top dielectric feature over the gate structure, the first gate spacer feature and the second gate spacer feature, a first source/drain feature over a first source/drain region, a second source/drain feature over a second source/drain region, a first dielectric layer over the first source/drain feature, and a second dielectric layer over the second source/drain feature. The method further includes replacing a top portion of the first dielectric layer with a first hard mask layer, forming a second hard mask layer over the first hard mask layer while the second dielectric layer is exposed, etching the second dielectric layer to form a source/drain contact opening and to expose the second source/drain feature, and forming a source/drain contact over the second source/drain feature.

Abstract: The UE allocates a slot group including a number of consecutive slots based on an operating subcarrier spacing. The UE receives a configuration allocating blind detections over non-overlapping CCEs in the slot group among a group of component carriers of the UE using the operating subcarrier spacing. The UE performs, in the slot group, a next set of blind detections over a next set of non-overlapping CCEs on a given component carrier of the group of component carriers in accordance with the configuration, when (a) a total number of blind detections that would have been performed in the slot group by the UE does not exceed a limit of total blind detections and (b) a total number of non-overlapping CCEs that would have been monitored in the slot group by the UE does not exceed a limit of total non-overlapping CCEs.

Abstract: A method for performing PDCCH monitoring of component carriers (CCs) in a carrier aggregation scheme that aggregates a first CC and a second CC. In some embodiments, the method includes: calculating a first monitoring occasion start time for a monitoring occasion of the first CC, wherein the first monitoring occasion start time is expressed as a first symbol-index value; calculating a second monitoring occasion start time for a monitoring occasion of the second CC, wherein the second monitoring occasion start time is expressed as a second symbol-index value; and generating a schedule for the monitoring occasion of the first CC and the monitoring occasion of the second CC based on an ascending order of the first monitoring occasion start time and the second monitoring occasion start time.

Abstract: A contact lens product includes a multifocal contact lens and a buffer solution. The multifocal contact lens includes a central region and at least one annular region. The annular region concentrically surrounds the central region. A diopter of the annular region is different from a diopter of the central region. The multifocal contact lens is immersed in the buffer solution, and the buffer solution includes a cycloplegic agent.

Abstract: A solid dosage component detection method for a solid dosage component measurement device comprises generating a transmitting electromagnetic wave with a terahertz frequency and emitting to a solid dosage component; detecting a receiving electromagnetic wave with a terahertz frequency through the solid dosage component; comparing the transmitting electromagnetic wave incident on the solid dosage component with the receiving electromagnetic wave received from the solid dosage component to detect a plurality of signal characteristics differences between the transmitting and receiving electromagnetic waves; and discriminating polymorphism of a testing pharmaceutical in the solid dosage component, calculating a concentration of the testing pharmaceutical in the solid dosage component, and analyzing a coating layer thickness and a porosity of the solid dosage component based on the plurality of signal characteristics differences.

Abstract: A method includes forming a gate stack, growing a source/drain region on a side of the gate stack through epitaxy, depositing a contact etch stop layer (CESL) over the source/drain region, depositing an inter-layer dielectric over the CESL, etching the inter-layer dielectric and the CESL to form a contact opening, and etching the source/drain region so that the contact opening extends into the source/drain region. The method further includes depositing a metal layer extending into the contact opening. Horizontal portions, vertical portions, and corner portions of the metal layer have a substantially uniform thickness. An annealing process is performed to react the metal layer with the source/drain region to form a source/drain silicide region. The contact opening is filled to form a source/drain contact plug.

Abstract: A three-bladed impeller providing a cooling airflow in air, with increased heat-dissipating efficiency and reduced noise includes a hub and three blades, the blades are arranged around the hub. Each blade is arched along its axial length from the front of fan to the back and also arched radially from the hub end of each blade to the outside tip. The back edge of each blade includes first and second slots, arranged alternately, the width of each first slot is ?1, the width of each of each second slot is ?2, the comparative sizes between ?2 and ?1 are in a ratio range of 1.6:1 to 1.8:1 (?2:?1).

Abstract: A key module includes a bracket, a circuit film assembly, a keycap, and a connecting structure. The bracket includes a bottom plate and a bracket pivotal portion protruding from the bottom plate. The circuit film assembly is disposed on the bracket and includes a plurality of film layers and a supporting portion formed by at least one of the film layers. The supporting portion is located beside the bracket pivotal portion. The keycap is disposed above the bracket and the circuit film assembly and includes a keycap pivotal portion. The connecting structure is disposed between the bracket and the keycap and includes a first pivot pivotally disposed at the bracket pivotal portion and a second pivot pivotally disposed at the keycap pivotal portion. The supporting portion beside the bracket pivotal portion supports the first pivot, such that the first pivot continuously contacts the bracket pivotal portion.

Abstract: Disclosed are an isolation structure of a photoresist stripper, a TFT array, and preparation methods thereof. The isolation structure includes a protective layer and a hardened layer arranged on the protective layer. The hardened layer is formed by plasma bombarding the protective layer with gas(es) and is configured to insulate the photoresist stripper. By forming the hardened layer on the surface of the protective layer including the organic planar layer, the hardened layer can prevent chemical agents (such as photoresist stripper) adopted in the subsequent process from getting into the protective layer, so as to keep the photoresist stripper from the protective layer, protecting the protective layer.

Abstract: An immersive multimedia system, an immersive interactive method and a movable interactive unit are provided in the disclosure. The immersive multimedia system includes multiple movable interactive units, an imaging apparatus, and a computer device. The multiple movable interactive units are disposed on at least one of the wall and the ground. The imaging apparatus is adapted to display an image screen on at least one of the wall and the ground. The computer device is connected to the multiple movable interactive units and the imaging apparatus. The computer device is adapted to control the multiple movable interactive units and the imaging apparatus. The multiple movable interactive units each include a touch sensing unit, and the image screen provided by the imaging apparatus changes in response to the touch sensing unit of at least one of the multiple movable interactive units sensing being touched.

Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.

Abstract: A solid-state image sensor with pixels each including a photoelectric conversion portion made of a second type doped semiconductor layer and a semiconductor material layer, and the second type doped semiconductor layer contacts a first type doped semiconductor substrate. An anti-reflective portion is provided with multiple micro pillars on the semiconductor material layer, wherein micro pillars are isolated by recesses extending into the photoelectric conversion portion, and the refractive index of the micro pillar gradually decreases from bottom to top and is smaller than the refractive index of the light-receiving portion of the semiconductor material layer.