Abstract: Diodes for ESD protection devices are described. The diodes have low capacitance. In an example, a semiconductor device includes a substrate, an n-type epitaxial layer on the n-type substrate in a first region of the n-type substrate, and a p-type epitaxial layer on the n-type epitaxial layer with an interface between the n-type and p-type epitaxial layers. The p-type epitaxial layer has a first concentration of p-type dopants throughout the p-type epitaxial layer. Also, the semiconductor device includes a p-type dopant distribution straddling across the interface, the p-type dopant distribution having a first peak concentration of p-type dopants greater than the first concentration, and an n-type dopant distribution straddling across the interface, the n-type dopant distribution having a second peak concentration of n-type dopants. The second peak concentration is substantially same as the first peak concentration.

Abstract: A method for preparing a thin-walled composite pipe is provided, in which an AlN particle/zinc-aluminum 27 (AlNp/ZA27) composite billet is subjected to multi-pass reciprocating extrusion at 250-350° C., and then loaded into a pipe extrusion die. The composite billet is heated with the temperature being in an ascending gradient distribution (within a range of 250-350° C.) along an extrusion direction from the billet to an outlet of the die, then kept a preset temperature for a period of time, and finally extruded at a rate of 0.1-0.5 mm/s to obtain the thin-walled composite pipe. A thin-walled composite pipe prepared by this method is also provided, including an AlN particle and a ZA27 alloy.

Abstract: A method for preparing a Zn—Mg—Ca—Sr alloy, in which an as-cast Zn—Mg—Ca—Sr alloy is subjected to homogenization, and a boron nitride lubricant is sprayed on a surface of the as-cast Zn—Mg—Ca—Sr alloy and an inner cavity surface of a die. The as-cast Zn—Mg—Ca—Sr alloy is put into the die, and subjected to heating and 8-pass reciprocating extrusion to obtain the desired Zn—Mg—Ca—Sr alloy with high strength and high toughness, where the extrusion speed is stagewise controlled to realize stagewise variable-extrusion speed reciprocating extrusion. This application also provides a biodegradable medical implant material including a Zn—Mg—Ca—Sr alloy prepared by such method.

Abstract: A method of preparing biodegradable Zn—Mg—Bi zinc alloy includes: melting magnesium under an inert atmosphere to obtain a magnesium melt; adding bismuth particles to the magnesium melt followed by reaction under stirring and heat preservation treatment to obtain a Mg—Bi alloy melt; allowing the Mg—Bi alloy melt to stand in a furnace; subjecting the Mg—Bi alloy melt to refining, slagging-off, casting and demoulding to obtain Mg-50 wt. % Bi alloy ingot; melting zinc to obtain a zinc melt; adding the Mg-50 wt. % Bi alloy ingot and pure magnesium or pure bismuth followed by heating to a preset temperature, stirring and heat preservation to obtain a Zn—Mg—Bi alloy melt; allowing the Zn—Mg—Bi alloy melt to stand in a furnace followed by refining, slagging-off, casting and demoulding to obtain the biodegradable Zn—Mg—Bi zinc alloy.

Abstract: A method of preparing a high-aluminum boron-containing die steel for severe plastic deformation of zinc alloys at elevated temperature, in which a cast ingot is obtained by sand casting, and then subjected to homogenization, austenitization, hot-die forging and cooling to obtain a heat-treated piece. The heat-treated piece is quenched and tempered to obtain a forged piece, which is subjected to finish machining to obtain the high-aluminum boron-containing die steel. A high-aluminum boron-containing die steel prepared by such method is further provided.

Abstract: A method for preparing a biodegradable zinc alloy semi-solid billet is provided, in which a biodegradable Zn—Mg—Bi—Ca—Sr zinc alloy ingot is subjected to homogenization annealing and three-directional compression deformation to obtain a uniformly-deformed three-directional upset billet. The three-directional upset billet is subjected to semi-solid isothermal heat treatment to obtain the semi-solid billet. A biodegradable zinc alloy semi-solid billet prepared by such method is also provided.

Abstract: A door assembly for a refrigeration appliance includes: an inner door which is provided with a first door frame that is enclosed to form an inner door cavity; a first door seal that is assembled on a rear side of the first door frame; and an outer door that is pivotably arranged on a front side of the inner door. The outer door has a thermal insulation glass module which includes at least two glass sheets that are spaced apart from each other. A sealing portion is arranged between the adjacent glass sheets. The sealing portion has a first sealing section, and, when viewed in a direction parallel to a main extension plane of the door assembly, the first sealing section is located on an outer side of the first door seal.

Abstract: The present disclosure provides a trench field effect transistor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate (100), forming an epitaxial layer (101), forming a device trench (102) in the epitaxial layer, and forming a shielding dielectric layer (107), a shielding gate layer (105), a first isolation dielectric layer (108), a gate dielectric layer (109), a gate layer (110), a second isolation dielectric layer (112), a body region (114), a source (115), a source contact hole (118), a source electrode structure (122), and a drain electrode structure (123). During manufacturing of a trench field effect transistor structure, a self-alignment process is adopted in a manufacturing process, so that a cell pitch is not limited by an exposure capability and alignment accuracy of a lithography machine, to further reduce the cell pitch of the device, improve a cell density, and reduce a device channel resistance.

Abstract: A method of preparing biodegradable Zn—Mg—Bi zinc alloy includes: melting magnesium under an inert atmosphere to obtain a magnesium melt; adding bismuth particles to the magnesium melt followed by reaction under stirring and heat preservation treatment to obtain a Mg—Bi alloy melt; allowing the Mg—Bi alloy melt to stand in a furnace; subjecting the Mg—Bi alloy melt to refining, slagging-off, casting and demoulding to obtain Mg-50 wt. % Bi alloy ingot; melting zinc to obtain a zinc melt; adding the Mg-50 wt. % Bi alloy ingot and pure magnesium or pure bismuth followed by heating to a preset temperature, stirring and heat preservation to obtain a Zn—Mg—Bi alloy melt; allowing the Zn—Mg—Bi alloy melt to stand in a furnace followed by refining, slagging-off, casting and demoulding to obtain the biodegradable Zn—Mg—Bi zinc alloy.

Abstract: A method of forming an integrated circuit includes forming a plurality of openings in a resist layer over a semiconductor substrate and removing portions of a semiconductor surface layer exposed by the openings, thereby forming a plurality of deep trenches. Removing the portions includes performing a first etch loop for a first plurality of repetitions, the first etch loop including a deposition process executed for a first deposition time and an etch process executed for a first etch time. The removing further includes performing a second etch loop for a second plurality of repetitions, the second etch loop including the deposition process executed for a second deposition time and an etch process executed for a second etch time. The second deposition time is at least 10% greater than the first deposition time, and the second etch time is at least 10% greater than the first etch time.

Abstract: A device for preparing ultra-high purity zinc based on intelligently-controlled zone melting, including a slide platform connected with a screw through a servo control system to control movement of a heating-cooling device. A quartz tube is provided inside an induction heater to protect a melting zone. An infrared thermometer is connected to the heater, and configured to monitor temperature within the melting zone, and control power of the heater. A ring magnetic stirrer with non-contact circumferential rotation cooperates with coil to stir zinc melt. A water-cooling copper jacket is connected to two ends of the heater to cool a zinc bar, and its water inlet and outlet are connected with a water chiller. The infrared thermometer monitors temperature of the zinc bar and controls water flow of the cooling system. A lifting device is connected with a base cabinet to change inclined angle of the zinc bar.

Abstract: A refrigeration appliance includes: a body, where the body is configured to define at least one storage compartment; a first door connected to the body through a first hinge, where the first door is configured to open to enable access and close to inhibit access to one of the at least one storage compartment; and a second door connected to a front of the first door through a second hinge. The refrigeration appliance further includes a connection accommodating portion. A first wire harness located in the first door and a second wire harness located in the second door are electrically connected to each other in the connection accommodating portion. The connection accommodating portion is located on the second hinge. Ideally, a structural layout on the first door can be optimized.

Abstract: A device for preparing ultra-high purity zinc based on intelligently-controlled zone melting, including a slide platform connected with a screw through a servo control system to control movement of a heating-cooling device. A quartz tube is provided inside an induction heater to protect a melting zone. An infrared thermometer is connected to the heater, and configured to monitor temperature within the melting zone, and control power of the heater. A ring magnetic stirrer with non-contact circumferential rotation cooperates with coil to stir zinc melt. A water-cooling copper jacket is connected to two ends of the heater to cool a zinc bar, and its water inlet and outlet are connected with a water chiller. The infrared thermometer monitors temperature of the zinc bar and controls water flow of the cooling system. A lifting device is connected with a base cabinet to change inclined angle of the zinc bar.

Abstract: A high-thermal conductivity composite material is AlNp/ZA27 composite material, including 2%, 4%, 6%, or 8% by volume of aluminum nitride (AlN) ceramic particles and zinc-aluminium-27 (ZA27) alloy. The ZA27 alloy includes 70.52-71.08% by weight of Zn, 25.58˜27.65% by weight of Al, 1.27˜3.45% by weight of Cu, and 0.50% or less by weight of Mg. In the preparation of the high-thermal conductivity composite material, an as-cast AlNp/ZA27 composite material is subjected to homogenizing annealing and reciprocating extrusion.

Abstract: A beam adjustment assembly includes a phase shifter and a connecting plate. The phase shifter includes a circuit board and main dielectric slabs configured to shift a phase. The circuit board is provided with a first strip and a second strip that are spaced. The first strip and the second strip are configured to respectively connect to radiating elements of an antenna. The connecting plate is slidably assembled on the circuit board and is configured to control an electrical connection between the first strip and the second strip. When sliding, the main dielectric slab can push the connecting plate to slide to control a quantity of radiating elements in the antenna system. The sliding of the main dielectric slab in the phase shifter is used as a driving mechanism of the connecting plate.

Abstract: Disclosed are a high-boron high-vanadium high-speed steel and a method for preparing the same. Pig iron, scrap steel, ferrochromium, ferromanganese, ferroboron, ferrovanadium, industrial pure iron, ferromolybdenum, ferrotungsten, ferrosilicon and ferrotitanium are subjected to smelting at 1580-1600° C. and refining to obtain a liquid steel. The liquid steel is subjected to superheating, and directional solidification at a casting temperature of 1420-1430° C., and cooled to room temperature to obtain the directionally solidified high-speed steel.

Abstract: A refrigeration device has a first door with an opening and a second door for closing the opening in the first door. A first hinge member has a first connection portion fixed on a main body of the refrigeration device and a first hinged portion connected to the first door. A second hinge member has a second connection portion fixed on the first door and a second hinged portion connected to the second door. The second hinge member includes a columnar portion that is hinged to the first hinged portion. One of the columnar portion and the first hinged portion has a first shaft hole, and the other one has a first hinge shaft that extends into the first shaft hole. The novel device prevents a door body of the refrigeration device from being damaged at a hinged position and the reliability of the refrigeration device is improved.

Abstract: The present disclosure provides a trench field effect transistor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate (100), forming an epitaxial layer (101), forming a device trench (102) in the epitaxial layer, and forming a shielding dielectric layer (107), a shielding gate layer (105), a first isolation dielectric layer (108), a gate dielectric layer (109), a gate layer (110), a second isolation dielectric layer (112), a body region (114), a source (115), a source contact hole (118), a source electrode structure (122), and a drain electrode structure (123). During manufacturing of a trench field effect transistor structure, a self-alignment process is adopted in a manufacturing process, so that a cell pitch is not limited by an exposure capability and alignment accuracy of a lithography machine, to further reduce the cell pitch of the device, improve a cell density, and reduce a device channel resistance.

Abstract: A beam adjustment assembly is provided. The assembly includes a phase shifter and a connecting plate. The phase shifter includes a circuit board and main dielectric slabs configured to shift a phase. The circuit board is provided with a first strip and a second strip that are spaced. The first strip and the second strip are configured to respectively connect to radiating elements of an antenna. The connecting plate is slidably assembled on the circuit board and is configured to control an electrical connection between the first strip and the second strip. When sliding, the main dielectric slab can push the connecting plate to slide, to control a quantity of radiating elements in the antenna system. It can be learned from the foregoing description that, in this application, the sliding of the main dielectric slab in the phase shifter is used as a driving mechanism of the connecting plate.

Abstract: A biodegradable Zn—Mg—Bi zinc alloy and a preparation method thereof. The method including: melting magnesium under an inert atmosphere to obtain a magnesium melt; adding bismuth particles to the magnesium melt followed by reaction under stirring and heat preservation treatment to obtain a Mg—Bi alloy melt; allowing the Mg—Bi alloy melt to stand in a furnace; subjecting the Mg—Bi alloy melt to refining, slagging-off, casting and demoulding to obtain Mg-50 wt. % Bi alloy ingot; melting zinc to obtain a zinc melt; adding the Mg-50 wt. % Bi alloy ingot and pure magnesium or pure bismuth followed by heating to a preset temperature, stirring and heat preservation to obtain a Zn—Mg—Bi alloy melt; allowing the Zn—Mg—Bi alloy melt to stand in a furnace followed by refining, slagging-off, casting and demoulding to obtain the biodegradable Zn—Mg—Bi zinc alloy.