Abstract: The present invention relates to semiconductor crystal growth equipments. A vapor controlled czochralski (VCZ) single crystal growth apparatus comprises a single crystal furnace, a heating unit, a mechanical transmission unit, and a gaseous adjustment unit. A hot-wall sealed container is mounted in the single crystal furnace, and a crucible is mounted within the hot-wall sealed container. The hot-wall sealed container includes an upper container part and a lower container part. A sealing connection device is provided between the upper and lower container parts. A crucible-transmitting shaft and a seed shaft are inserted into the hot-wall sealed container through respective sealing devices.

Abstract: A housing structure used for a display device. A transparent substrate is provided with a completed luminescent device. The rim of the transparent substrate is bonded to the rim of a sealing cap to form an airtight space. A sealing structure with a first sealing layer and a second sealing layer is provided on the bonding rim between the sealing cap and the transparent substrate. The materials used to form the first sealing layer and the second sealing layer are different.

Abstract: A housing structure used for a display device. A transparent substrate is provided with a completed luminescent device. The rim of the transparent substrate is bonded to the rim of a sealing cap to form an airtight space. A sealing structure with a first sealing layer and a second sealing layer is provided on the bonding rim between the sealing cap and the transparent substrate. The materials used to form the first sealing layer and the second sealing layer are different.

Abstract: A genetic transformation system via the pollen tube pathway is presented, plasmid DNA prepared with each of 4 different methods was applied to the surface of an ovary wound site after removal of the style of florets following pollination. Movement of the plasmid DNA indicated plasmid DNA reached the ovules of decapitated florets within about 24 hours after its application to the surface of remaining styles or ovary wound site after pollination. Based on the result of PCR analyses of genomic DNA, 12% to 15% of the plants tested had the 282 bp fragment, the specific portion of the luciferase gene construct into the genome. Southern blotting of genomic DNA from PCR positive plants indicated that the firefly luciferase gene construct may have been incorporated into the genomic DNA of the plants.

Abstract: A packaging structure for an OLED/PLED device. The packaging structure has a glass substrate on which a luminescent element is completed, and a sealing cap bonded to the rim of the glass substrate so as to seal the luminescent element within an airtight space. Also, a sealing agent is disposed between the rims of the sealing cap and the glass substrate, wherein the sealing agent is an alloy with a low eutectic point about 100˜300° C.

Abstract: A Service Control Point (SCP) has a call list associated with the main telephone number of a called party. When a calling party attempts to contact the called party by calling the main number, but cannot reach the main number, a Service Switching Point (SSP) fires a trigger. One trigger is a T_No_Answer trigger, which is fired in response to a call to the main number that is not answered within a predefined number of rings. Another trigger is a T_Busy trigger that is fired in response to a call to the main number that is made when the main number is busy. Each trigger causes the SCP to access the call list and to cause the SSP to ring an alternative telephone number associated with the main telephone number. If this attempt to reach the called party also fails, then the SSP again fires the trigger and an attempt is made to connect the calling party to the next number on the call list.

Abstract: The present invention relates to semiconductor crystal growth equipments. A vapor controlled czochralski (VCZ) single crystal growth apparatus comprises a single crystal furnace, a heating unit, a mechanical transmission unit, and a gaseous adjustment unit. A hot-wall sealed container is mounted in the single crystal furnace, and a crucible is mounted within the hot-wall sealed container. The hot-wall sealed container includes an upper container part and a lower container part. A sealing connection device is provided between the upper and lower container parts. A crucible-transmitting shaft and a seed shaft are inserted into the hot-wall sealed container through respective sealing devices.

Abstract: A method is to form a thin film light emitting device. The method includes providing a transparent substrate. A transparent anode layer, a light emitting layer, a metal cathode layer are sequentially formed on the transparent substrate. A sealant layer is formed to at least cover the light emitting layer and the metal cathode layer. A covering layer having a covering surface is provided. An evaporation process is performed to form an active absorption layer on the covering surface of the covering layer. The covering surface of the covering layer covers on a portion of the sealant layer above the metal cathode layer. The covering layer can have a recess region that is to be formed the active absorption layer thereon. Alternatively, the active absorption cab be evaporated before the sealant is formed. Moreover, the active absorption layer can be replaced with an insulating layer.

Abstract: A stop-check valve includes inside a valve body a swing check valve disc and a contacting projection. A vertically mounted valve rod provided with a handwheel and having at the lower end a structure of a cylindrical contact portion is further included. The contact portion is vertically movable in coupling arrangement with the valve rod and capable of contacting with the contacting projection on the valve disc.