Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.

Abstract: A computer-implemented method, system and computer program product for providing high quality speech recognition. A first speech-to-text model is selected to perform speech recognition of a customer's spoken words and a second speech-to-text model is selected to perform speech recognition of the agent's spoken words during a call. The combined results of the speech-to-text models used to process the customer's and agent's spoken words are then analyzed to generate a reference speech-to-text result. The customer speech data that was processed by the first speech-to-text model is reprocessed by multiple other speech-to-text models. A similarity analysis is performed on the results of these speech-to-text models with respect to the reference speech-to-text result resulting in similarity scores being assigned to these speech-to-text models.

Abstract: A preparation method of the microcapsules for low-temperature well cementation to be used to control cement hydration heat includes: (S1) a shell material, and added into deionized water, then the resultant mixture being stirred in a thermostat water bath so as to completely dissolve it into a homogeneous and stable shell material solution; (S2) a core material and an emulsifier being put into a three-necked flask and stirred in a thermostat water bath so as to uniformly emulsify and disperse them, forming a stable oil-in-water core material emulsion, while adjusting the pH value of the emulsion with a pH adjuster; (S3) the three-necked flask containing the core material emulsion being transferred to a water bath, and then the shell material solution being dropwise added into it with stirring, after reacting, a solid-liquid mixture being poured out so as to naturally cool it to room temperature.

Abstract: A solid electrolyte three-electrode electrochemical test device comprises a housing, a working electrode, a counter electrode, a reference electrode, a first conductive structure, a second conductive structure, a third conductive structure, and a solid electrolyte layer. The housing comprises a groove and a first through hole located at a bottom of the groove. The reference electrode is insulated from the counter electrode. The first conductive structure and the working electrode are stacked with each other, and the working electrode and at least a part of the first conductive structure are located in the first through hole. The solid electrolyte layer, the counter electrode, the reference electrode, the second conductive structure and the third conductive structure are located in the groove, and the first conductive structure, the working electrode, the solid electrolyte layer, the counter electrode, and the second conductive structure are sequentially stacked and located coaxially with each other.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ; forming a passivation layer around the MTJ; forming a second SOT layer on the first SOT layer and the passivation layer; and patterning the second SOT layer and the passivation layer.

Abstract: A method for healing surface irregularities in a weld joint includes generating a healing energy beam by a focused energy device, where the healing energy beam includes a predefined energy density. The method also includes scanning the healing energy beam along at least a portion of a periphery of the weld joint, where the weld joint includes at least an upper layer and a lower layer. The method also includes melting less than half a thickness of the upper layer of the weld joint. The predefined energy density of the healing energy beam is based on the thickness of the upper layer of the weld joint.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

Abstract: The present disclosure is directed to surfactants (in particular olefin sulfonates), surfactant packages, compositions derived thereof, and uses thereof in hydrocarbon recovery. Methods of making olefin sulfonate surfactants are also described.

Abstract: A urinary catheter conveying device includes a sleeve member, a conveying assembly and a controller. The sleeve member is for sleeving onto a glans of a penis and has a guiding hole to be registered with an external urethral orifice of the glans. The conveying assembly includes a casing removably mounted to the sleeve member, and a conveying mechanism for advancing the urinary catheter to the guiding hole such that the urinary catheter is inserted into the external urethral orifice. The controller controls the conveying mechanism to advance the urinary catheter to the guiding hole. A urinary catheterization system and a method of using the urinary catheterization system are also disclosed.

Abstract: Interconnect devices, packaged semiconductor devices and methods are disclosed herein that are directed towards embedding a local silicon interconnect (LSI) device and through substrate vias (TSVs) into system on integrated substrate (SoIS) technology with a compact package structure. The LSI device may be embedded into SoIS technology with through substrate via integration to provide die-to-die FL connection arrangement for super large integrated Fan-Out (InFO) for SBT technology in a SoIS device. Furthermore, the TSV connection layer may be formed using lithographic or photoresist-defined vias to provide eLSI P/G out to a ball-grid-array (BGA) connection interface.

Abstract: Techniques are disclosed for milling an iron-containing raw material in the presence of a nitrogen source to generate anisotropically shaped particles that include iron nitride and have an aspect ratio of at least 1.4. Techniques for nitridizing an anisotropic particle including iron, and annealing an anisotropic particle including iron nitride to form at least one ??-Fe16N2 phase domain within the anisotropic particle including iron nitride also are disclosed. In addition, techniques for aligning and joining anisotropic particles to form a bulk material including iron nitride, such as a bulk permanent magnet including at least one ??-Fe16N2 phase domain, are described. Milling apparatuses utilizing elongated bars, an electric field, and a magnetic field also are disclosed.

Abstract: The present disclosure is directed to surfactants (in particular olefin sulfonates), surfactant packages, compositions derived thereof, and uses thereof in hydrocarbon recovery. Methods of making olefin sulfonate surfactants are also described.

Abstract: This invention relates to humanized antibodies that selectively bind the 31.1 epitope on the A33 protein differentially expressed in cancers including, lung cancer, ovarian cancer, pancreas cancer, breast cancer, and colon cancer, and diagnostic and therapeutic usages.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.

Abstract: In various embodiments, the present disclosure includes a nitrogen-polar (N-polar) nanowire that includes an indium gallium nitride (InGaN) quantum well formed by selective area growth. It is noted that the N-polar nanowire is operable for emitting light.

Abstract: The present disclosure is directed to surfactants (in particular olefin sulfonates), surfactant packages, compositions derived thereof, and uses thereof in hydrocarbon recovery. Methods of making olefin sulfonate surfactants are also described.

Abstract: Apparatuses, systems, and methods for a wireless device to perform methods to implement mechanisms for a UE to request a beam quality measurement procedure. A user equipment device may be configured to perform a method including performing transmitting a request to perform a beam quality measurement procedure for downlink receptions (e.g., a P3 procedure) to a base station/network entity, receiving instructions to perform the beam quality measurement procedure from the base station, and transmitting results of the beam quality measurement procedure to the base station. In some embodiments, transmission of the request may be response to at least one trigger condition and/or detection of a condition at the UE. The request may include an indication of a preferred timing offset. The instructions to perform the beam quality measurement procedure may include a schedule for the beam quality measurement.

Abstract: Devices and methods of providing joint scheduling in a full-duplex LTE system are generally described. The UE measures intra-cell interference at the UE caused by a UL transmission from each intra-cell UE, calculates a ratio of the intra-cell interference over an average inter-cell interference, determines whether the intra-cell UE is an aggressor or non-aggressor based on whether the ratio exceeds a threshold, transmits at least some of the determinations to the eNB as feedback, and communicates with the eNB based on a schedule that is dependent on the feedback such that the UE is neither an aggressor nor is subject to interference from aggressors. The schedule may also be based on wideband CQI feedback based on a ratio of an average overall DL interference plus noise over the average inter-cell interference plus noise and/or subband. CQI feedback based on SINR measurements.

Abstract: A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.

Abstract: A faucet is provided, and the faucet includes a faucet body, an electrically controllable valve, a contact sensing unit, a motion sensing unit, and a control unit. The control unit determines an operation mode of the faucet based on a signal of the contact sensing unit and a signal of the motion sensing unit, and controls an on-off state of the electrically controllable valve.