Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, and a source structure. The memory stack is over a substrate and includes interleaved a plurality of conductor layers and a plurality of insulating layers. The source structure includes a plurality of source contacts, and two adjacent ones of the plurality of source contacts are conductively connected to one another by a connection layer. A pair of first portions of the connection layer are over the two adjacent ones of the plurality of source contacts and a second portion of the connection layer being between the two adjacent ones of the plurality of source contacts. Top surfaces of the pair of first portions of the connection are coplanar with a top surface of the second portion.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack over a substrate, a plurality of channel structures, and a source structure. The memory stack includes interleaved a plurality of conductor layers and a plurality of insulating layers. The plurality of channel structures extend vertically in the memory stack. The source structure extend in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure. At least two of the plurality of source contacts are in contact with and conductively connected to one another.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a stack structure and at least one source structure extending vertically and laterally and dividing the stack structure into a plurality of block regions. The stack structure may include a plurality of conductor layers and a plurality of insulating layers interleaved over a substrate. The at least one source structure includes at least one support structure extending along the vertical direction to the substrate, the at least one support structure being in contact with at least a sidewall of the respective source structure.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the 3D memory device includes a memory stack having interleaved a plurality of conductor layers and a plurality of insulating layers extending laterally in the memory stack. The 3D memory device also includes a plurality of channel structures extending vertically through the memory stack into the substrate. The 3D memory device further includes at least one slit structure extending vertically and laterally in the memory stack and dividing a plurality of memory cells into at least one memory block, the at least one slit structure each including a plurality of slit openings and a support structure between adjacent slit openings. The support structure may be in contact with adjacent memory blocks and contacting the substrate.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, a slit structure, and a source structure. The memory stack may be over a substrate and may include interleaved a plurality of conductor layers and a plurality of insulating layers extending laterally in the memory stack. The plurality of channel structures may extend vertically through the memory stack into the substrate. The slit structure may extend vertically and laterally in the memory stack and divide the plurality of memory cells into at least one memory block. The slit structure may include a plurality of protruding portions and a plurality of recessed portions arranged vertically along a sidewall of the slit structure.

Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the 3D memory device includes a stack structure. The stack structure includes a plurality of conductor layers and a plurality of insulating layers interleaved over a substrate. The plurality of conductor layers include a pair of top select conductor layers divided by a first top select structure and a pair of bottom select conductor layers divided by a bottom select structure. The first top select structure and the bottom select structure extend along a horizontal direction and are aligned along a vertical direction. A plurality of channel structures extend along a vertical direction and into the substrate and are distributed on both sides of the top select structure and the bottom select structure.

Abstract: A method for forming a gate structure of a 3D memory device is provided. The method comprises: forming, on a substrate, an alternating dielectric stack including a plurality of dielectric layer pairs, each of the plurality of dielectric layer pairs comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer; forming a slit penetrating vertically through the alternating dielectric stack and extending in a horizontal direction; removing the plurality of second dielectric layers in the alternating dielectric stack through the slit to form a plurality of horizontal trenches; forming a gate structure in each of the plurality of horizontal trenches; forming a spacer layer on sidewalls of the slit to cover the gate structures, wherein the spacer layer has a laminated structure; and forming a conductive wall in the slit, wherein the conductive wall is insulated from the gate structures by the spacer layer.

Abstract: A porous chiral material of formula [M(L)1.5(A)]+X? wherein M is a metal ion; L is a nitrogen-containing bidentate ligand; A is the anion of mandelic acid or a related acid; and X? is an anion.

Abstract: Disclosed are tethered chromophore compositions comprising a membrane-spanning tether. The compounds can include covalently tethered fluorophore-quencher combinations useful for measuring action potentials and other fast electrical events in cells and tissues.

Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.

Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.

Abstract: Among other things, embodiments of the present disclosure help identify anomalous web browser session behavior. Other embodiments may be described and/or claimed.

Abstract: An LED light apparatus includes a back cover, a surrounding wall, a light source and a surface ring. The back cover has a top side and a back cover inner side. The surrounding wall is connected to the back cover. The light source is fixed to an inner wall side of the surrounding wall. The surface ring has a surface ring inner side connected to the surrounding wall. The surface ring inner side, the inner wall side and the back cover inner side form a light movement space. The back cover inner side has a three-dimension curve surface for reflecting light to the light opening of the surface ring.

Abstract: An LED light apparatus includes a back cover, a surrounding wall, a light source and a surface ring. The back cover has a top side and a back cover inner side. The surrounding wall is connected to the back cover. The light source is fixed to an inner wall side of the surrounding wall. The surface ring has a surface ring inner side connected to the surrounding wall. The surface ring inner side, the inner wall side and the back cover inner side form a light movement space. The back cover inner side has a three-dimension curve surface for reflecting light to the light opening of the surface ring.

Abstract: Embodiments of a three-dimensional (3D) memory device with a corrosion-resistant composite spacer and method for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack disposed on the substrate and including a plurality of conductor/dielectric layer pairs, a plurality of memory strings each extending vertically through the memory stack, a slit contact disposed laterally between the plurality of memory strings, and a composite spacer disposed laterally between the slit contact and at least one of the memory strings. The composite spacer includes a first silicon oxide film, a second silicon oxide film, and a dielectric film disposed laterally between the first silicon oxide film and the second silicon oxide film.

Abstract: A porous chiral material of formula [M(L)1.

Abstract: Architectures and techniques for in-app behavior detection. A behavior detection agent within an application running on a hardware computing device captures events within the application. The events are inputs received from one or more sources external to the application. The behavior detection agent generates an event stream from the captured events. The behavior detection agent analyzes the event stream for significant feature frequencies and associations corresponding to one or more attack profiles. The behavior detection agent initiates an attack response in response to finding one or more significant feature frequencies and associations. The attack response comprises at least changing an operational configuration of the application.

Abstract: One example method for navigating a scrollable user interface includes outputting to a display device the scrollable user interface, the scrollable user interface including a scroll-control target. The method further includes receiving a pointer input, and moving a position of a virtual pointer on the scrollable user interface responsive to the pointer input. Responsive to the virtual pointer being within a first region of the scroll-control target, the scrollable user interface is scrolled at a first speed. Responsive to the virtual pointer being within a second region of the scroll-control target, the scrollable user interface is scrolled at a second speed, faster than the first speed.

Abstract: Threat detection in a multi-organizational environment. Attribute data corresponding to accesses to a multi-organizational environment and entity data corresponding to accesses to the multi-organizational environment are maintained. A graph based on the attribute data and the entity data where graph edges represent a relationship between an attribute and an entity is generated. Subsequent access are compared to the graph to determine if the subsequent access corresponds to a new relationship. The subsequent access is allowed if the subsequent access does not correspond to a new relationship. The subsequent access further analyzed if the subsequent access corresponds to a new, unexpected relationship.

Abstract: Disclosed are an image acquisition compound lens and application thereof. The image acquisition compound lens includes a camera lens and two or more convex mirrors having a same shape, wherein, the camera lens has a predetermined front field of view; the two or more convex mirrors having the same shape are symmetrically disposed with respect to an optical axis (c) of the camera lens within the predetermined front field of view of the camera lens, and configured to reflect partial views beside and behind the camera lens to the camera lens respectively; a mirror gap is formed between the convex mirrors symmetrically disposed, allowing the mirror lens to directly acquire views within a first front field of view right in front of the mirror lens.