Abstract: A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.

Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC.

Abstract: A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other.

Abstract: A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer.

Abstract: A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.

Abstract: The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.

Abstract: The present disclosure provides various methods for removing an anti-stiction layer. An exemplary method includes forming an anti-stiction layer over a substrate, including over a first substrate region of a first material and a second substrate region of a second material, wherein the second material is different than the first material; and selectively removing the anti-stiction layer from the second substrate region of the second material without using a mask.

Abstract: The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.

Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

Abstract: A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.

Abstract: The processing chamber comprises an energy wave source and a curved spherical surface, wherein the curved spherical surface of the chamber is composed of at least a Fresnel reflector for reflecting the energy wave discharged from the energy wave source and projecting the same onto a platform as the energy wave source is operating in coordination with the curved spherical surface. In addition, the energy wave source can be a microwave source or a light source. It is noted that the curved spherical surface can be a Fresnel reflector, a wave spherical surface with a portion thereof being replaced by a Fresnel reflector, a curved spherical surface with a portion therof being replaced by at least two Fresnel reflectors, and a surface entirely formed of a plurality of Fresnel reflectors.

Abstract: A process for making a diamond film with low surface roughness. A substrate is provided. A diamond layer is deposited on the substrate. A binder layer is coated over the diamond layer. A carrier plate is provided to join with the binder layer, thereby forming a laminate structure. The substrate is then removed, thereby obtaining a diamond film with a low surface roughness with respect to the surface roughness of the removed substrate.

Abstract: A substrate temperature control apparatus adopted for use in plasma diamond coating of a substrate to reduce warping caused by excessive temperature variations includes a holding dock with a temperature sensor, a cooler and a heater installed therein. During the plasma process, if the detected temperature variation is excessive, the cooler or heater is activated to control the temperature of the upper surface and the lower surface of the substrate so that the temperature on two sides are controlled within a selected range to reduce warping.

Abstract: A process for making a diamond film with low surface roughness. A substrate is provided. A diamond layer is deposited on the substrate. A binder layer is coated over the diamond layer. A carrier plate is provided to join with the binder layer, thereby forming a laminate structure. The substrate is then removed, thereby obtaining a diamond film with a low surface roughness with respect to the surface roughness of the removed substrate.

Abstract: A microelement piezoelectric feedback type picking and releasing device is constructed to include a piezoelectric material, an IDT (interdigital transducer) electrode plated and a progressive electrode plated on the piezoelectric material, the progressive electrode having a plurality of electrode elements of different sizes arranged in proper order in one direction, the IDT electrode forming a releasing unit by means of surface acoustic wave/ultrasonic wave and serving as a voltage signal feedback sensor for clamping force control.

Abstract: A microelement piezoelectric feedback type picking and releasing device is constructed to include a piezoelectric material, an IDT (interdigital transducer) electrode plated and a progressive electrode plated on the piezoelectric material, the progressive electrode having a plurality of electrode elements of different sizes arranged in proper order in one direction, the IDT electrode forming a releasing unit by means of surface acoustic wave/ultrasonic wave and serving as a voltage signal feedback sensor for clamping force control.

Abstract: An electric power recovering system includes a switch disposed between a battery and a coil, and two diodes coupled between the coil and the battery. A capacitor is coupled between the diodes and is grounded. The switch is alternatively actuated either manually or by an alternatively actuating device for allowing the coil to generate a high voltage and for allowing the coil to charge the battery. A DC/DC converter is further coupled between the battery and the switch for providing an increased electric power.