Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A signal error calibrating method is disclosed herein and includes following steps: filtering an error voltage in a sensor by a low pass filter in a calibration mode; converting the offset voltage to be a digital offset signal by an analog digital signal converter; converting the digital offset signal to be an offset calibrating signal by a digital analog signal converter; transmitting the offset calibrating signal to an input end of the sensor so as to offset an error voltage at the input end of the sensor. After calibrating the error voltage, the analog digital converter in the error calibrating circuit can be used for the need of signal output and the low pass filter is turned off at the same time.

Abstract: Apparatus and methods are provided for initial access in the multi-beam operation. In one novel aspect, the UE receives multiple response messages and selects one message as the response message. In one embodiment, the UE selects a subset of a configured UL resources, transmits a first message, wherein the first message is transmitted one or more times on each of the selected set of UL resources, receives one or more first-message-response messages from the BS, and selects one response message, wherein the selected response message indicates a corresponding BS RX resource, which is used by the UE for subsequent communication with the BS. In one embodiment, the selection of UL resources is at least based on transmitting spatial characteristics of the BS, the UE or both, which indicates whether the BS/UE is reciprocal, partial reciprocal or non-reciprocal.

Abstract: A semiconductor structure includes a semiconductor device, a plurality of through semiconductor vias (TSV), a first seal ring, and a second seal ring. The TSVs penetrate through the semiconductor device. The TSVs are adjacent to an edge of the semiconductor device. The first seal ring is disposed on and physically connected to one end of each of the TSVs. The second seal ring is disposed on and physically connected to another end of each of the TSVs.

Abstract: A substrate includes a first metal layer, a second metal layer, a third metal layer and an insulation layer surrounding the first metal layer, the second metal layer and the third metal layer. The first power component is electrically connected to the first metal layer. The second power component is electrically connected to the second metal layer. The shortest distance between the first metal layer exposed to a second surface of the insulation layer and the second metal layer exposed to the second surface is a first distance, the shortest distance between a first metal layer of the insulation layer exposed to the first surface and the second metal layer exposed to the first surface is a second distance, and a ratio value of the first distance to the second distance ranges between 1.25 and 1.4.

Abstract: A wiring device includes a plurality of trenches and a plurality of channel sets. The trenches at least include a first trench, a second trench and a third trench, bottoms of which are respectively located at different height positions. Each of the channel sets at least includes a first channel, a second channel and a third channel. The first channels penetrate the wiring device from an outer sidewall thereof to the first trenches, respectively, the second channels penetrate the wiring device from the outer sidewall thereof to the second trenches, respectively, and the third channels penetrate the wiring device from the outer sidewall thereof to the third trenches, respectively. The wiring device has the advantages of a simple structure and a low cost for molding and manufacturing, and is suitable to perform winding by a manual or automatic machine and thus can prevent first output wires of the coil windings with in phase or out of phase from entangling or knotting with each other.

Abstract: A vibration box on a negative pressure cup capable of strengthening airtightness for achieving waterproof, anti-collision and noise reduction functions, comprising a vibration box installed on a negative pressure cup; a vibration motor disposed inside the vibration box; a vibration box back cover disposed on a back of the vibration box for sealing; a waterproof rubber element disposed on the vibration box back cover and a contact surface of the vibration box, the vibration box back cover and the contact surface of the vibration box being reciprocally disposed with flanges and grooves, a surface of the waterproof rubber element being disposed with recesses with a concave cross section, each of the recesses being sleeved to one of the flanges and embedded in the groove to be sealed; a noise reduction cover hooded outside the vibration motor; and a buffer cushion disposed between the vibration motor and the noise reduction cover.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: Techniques and examples of channel multiplexing within interlace for New Radio (NR) unlicensed spectrum (NR-U) operation are described. An apparatus (e.g., user equipment (UE)) determines which sub-interlace of multiple sub-interlaces in each of a plurality of interlaces is assigned to the apparatus. The apparatus then performs an uplink (UL) transmission to a wireless network in an NR-U using the assigned sub-interlace in each of the plurality of interlaces. Each of the plurality of interlaces may be divided into respective multiple sub-interlaces with channel multiplexing.

Abstract: A method is provided. A bottom passivation layer is formed on a dielectric layer over a semiconductor substrate. Then, a first opening is formed in the bottom passivation layer to expose a portion of the dielectric layer. Next, a metal pad is formed in the first opening. Afterwards, a first oxide-based passivation layer is formed over the metal pad. Then, a second oxide-based passivation layer is formed over the first oxide-based passivation layer. The second oxide-based passivation layer has a hardness less than a hardness of the first oxide-based passivation layer.

Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

Abstract: A method of default uplink beam determination after radio resource control (RRC) connection reestablishment in a beamforming system is proposed. For uplink (UL) transmission, the BS provides dedicated physical uplink control channel (PUCCH) resource configuration to UE. The configuration includes spatial relation information that indicates the spatial domain transmission filter to be used by UE for the corresponding PUCCH transmission. After RRC connection re-establishment and before a dedicated PUCCH configuration is received, a default UE TX beam can be determined based on the UE TX beam used during the RRC connection re-establishment procedure, e.g., the UE TX beam used to transmit MSG3 in a four-step random-access channel (RACH) procedure triggered by the RRC connection re-establishment procedure.

Abstract: A bias circuit generates a bias current to an RF power amplifier used for transmitting RF signals, and the amount of the bias current supplied to the RF power amplifier can be configured in multiple modes through transistor switches that are controlled by mode control signals, so that the bias current supplied to the RF power amplifier can be adjusted according to the required power level of the transmitting RF signals. In addition, the bias current can be turned off by another transistor switch that is controlled by a power control signal for saving power while the RF power amplifier is not transmitting RF signals.

Abstract: An adjustment device for adjusting an up-down displacement of an optical engine module of a projection device includes a bracket, at least one adjustment zone, at least one flexible element, and at least one adjustment element. The bracket is disposed inside the projection device. The at least one adjustment zone is located at the optical engine module. There is a gap between the optical engine module and the bracket. The at least one flexible element is abutted between the bracket and the optical engine module. The at least one adjustment element is movably disposed through the at least one adjustment zone. A distance between the at least one adjustment zone of the optical engine module and the bracket is adjusted by an operation of the at least one adjustment element. A projection device using the adjustment device is also provided.

Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. A semiconductor device having a first surface and a second surface opposite to the first surface is provided. A plurality of through semiconductor vias (TSV) embedded in the semiconductor device is formed. A first seal ring is formed over the first surface of the semiconductor device. The first seal ring is adjacent to edges of the first surface and is physically in contact with the TSVs. A second seal ring is formed over the second surface of the semiconductor device. The second seal ring is adjacent to edges of the second surface and is physically in contact with the TSVs.

Abstract: Present invention is related to a microwave and electromagnetic heated foaming method, mold and foaming material thereof. The microwave and electromagnetic heated foaming method comprises steps of adding a foam material into a mold, simultaneously applying a microwave and electromagnetic energy toward the mold under a normal or low pressure, and the microwave and electromagnetic energy made the foam material into molded foam body. The mold of the present invention has a microwave penetrating part and an electromagnetic heating part. The microwave penetrating part has an extruded bottom that is corresponded to a dented top of the electromagnetic heat penetrating part. By utilizing the microwave and electromagnetic energy, the present invention is about to provide an efficient way for processing the foaming material compared to the conventional infrared or electrical heated tube heating and achieve the foam method that can be executed under normal or low pressure.

Abstract: A method of beam reciprocity state reporting and uplink beam management in wireless communication systems with beamforming is proposed. In one novel aspect, a BS configures one or more resource sets to a UE for uplink beam management. The one or more resource sets are allocated for UE to transmit UL reference signals using a number of UE beams. The number of UE beams to be trained is reported by the UE, e.g., via a “UE beam reciprocity state (update)” message. The BS also indicates whether a fixed UE TX beam or which UE TX beam is used for transmission, or indicates whether different UE TX beams are used for transmission of different resources in a resource set. The BS then feedback measurement results for UE to choose a proper TX beam.

Abstract: The invention relates generally crystalline mesylate salts, crystalline chloride salts and crystalline sulfate salts of the compound (S)-2-(3?-(hydroxymethyl)-1-methyl-5-((5-(2-methyl-4-(oxetan-3-yl)piperazin-1-yl)pyridin-2-yl)amino)-6-oxo-1,6-dihydro-[3,4?-bipyridin]-2?-yl)-7,7-dimethyl-2,3,4,6,7,8-hexahydro-1H-cyclopenta[4,5]pyrrolo[1,2-a]pyrazin-1-one that is an inhibitor of Bruton's tyrosine kinase. In some aspects, the crystalline salts are single polymorphs.

Abstract: A method of beam failure recovery request (BFRQ) transmission is proposed. UE can search for UE-specific control channel in a search space that is signaled specifically for monitoring network response of the BFRQ. Furthermore, configurations indicated specifically for BFRQ can be carried by dedicated signaling such as high-layer radio resource control (RRC) signaling. After successfully rebuilding connection, UE assumes the demodulation reference signal (DMRS) ports of UE-specific control channel to be spatially quasi-co-located (QCL-ed) with the reference signals identified during the beam failure recovery procedure.