Abstract: A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package.

Abstract: A semiconductor package structure includes an insulating substrate, a patterned conductive layer, a light emitting diode (LED) chip and a conductive connection part. The insulating substrate has an upper surface divided into an element configuration region and an element bonding region. The patterned conductive layer includes plural circuits located in the element configuration region and at least one bonding pad located in the element bonding region. The LED chip is flip chip bonded on the patterned conductive layer and electrically connected to the circuits. The conductive connection part has a first end point electrically connected to the bonding pad and a second end point electrically connected to an external circuit. The bonding pad and a corner of the LED chip are disposed correspondingly. A horizontal distance between an apex of the corner and the first end point of the conductive connection part is greater than or equal to 30 micrometers.

Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

Abstract: A substrate structure for carrying plural heat generating elements is provided. The substrate structure includes a board, a patterned metal layer and plural heat dissipating channels. The board has an upper surface. The patterned metal layer is disposed on the board and includes a first electrode, a second electrode, plural first pads and plural second pads. The first pads and the second pads are alternatively disposed on the upper surface in parallel. Parts of the first (second) pads are electrically connected to the first (second) electrode. The other parts of first pads and the other parts of second pads are electrically connected to each other. Each first pad and the adjacent second pad define a device bonding area. The heat generating elements are respectively disposed in the device bonding areas. There are multiple trenches between the two adjacent device bonding areas. The heat dissipating channels are disposed in the trenches.

Abstract: A semiconductor package structure includes an insulating substrate, a patterned conductive layer, a light emitting diode (LED) chip and a conductive connection part. The insulating substrate has an upper surface divided into an element configuration region and an element bonding region. The patterned conductive layer includes plural circuits located in the element configuration region and at least one bonding pad located in the element bonding region. The LED chip is flip chip bonded on the patterned conductive layer and electrically connected to the circuits. The conductive connection part has a first end point electrically connected to the bonding pad and a second end point electrically connected to an external circuit. The bonding pad and a corner of the LED chip are disposed correspondingly. A horizontal distance between an apex of the corner and the first end point of the conductive connection part is greater than or equal to 30 micrometers.

Abstract: An electronic device including an insulating substrate, a plurality of conductive vias and a chip is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The conductive vias pass through the insulating substrate. The chip is disposed on the upper surface of the insulating substrate and includes a chip substrate, a semiconductor layer and a plurality of contacts. The semiconductor layer is located between the chip substrate and the contacts. The contacts are electrically connected to the conductive vias. The material of the insulating substrate and the material of the chip substrate are the same.

Abstract: An electronic device including an insulating substrate, a chip and a patterned conductive layer is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The chip is disposed above the upper surface of the insulating substrate. The patterned conductive layer is disposed between the upper surface of the insulating substrate and the chip. The chip is electrically connected to an external circuit via the patterned conductive layer. Heat generated by the chip is transferred to external surroundings via the patterned conductive layer and the insulating substrate.

Abstract: A light emitting device including an insulating substrate, a plurality of light emitting diode (LED) chips and a patterned conductive layer is provided. The insulating substrate has an upper surface. The LED chips are disposed on the insulating substrate and located on the upper surface. The dominant wavelengths of the LED chips are in a wavelength range of a specific color light and the dominant wavelengths of at least two of the LED chips are different. The patterned conductive layer is disposed between the insulating substrate and LED chips, and electrically connected to the LEDs chip.

Abstract: A plate including a substrate, a metal reflection layer and an oxidation protection layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The metal reflection layer is disposed on the first surface of the substrate. The oxidation protection layer covers the metal reflection layer. The metal reflection layer is disposed between the oxidation protection layer and the first surface of the substrate. At least one light emitting diode chip is adapted to eutectic bonding on the plate.

Abstract: A light-emitting device including a substrate and a plurality of the semiconductor light-emitting diode dice having dominant wavelengths between 440 nm and 490 nm is disclosed. The semiconductor light-emitting diode dice are disposed on the substrate and electrically connected to the substrate. The difference in the wavelength of the semiconductor light-emitting diode dice between the maximum dominant wavelength and the minimum dominant wavelength is at least 10 nm and the average dominant wavelength is between 450 nm and 470 nm. Therefore, by the above arrangement, it not only homogenizes the light emitted from the light-emitting device of the present invention, but also depletes the surplus stocks of the semiconductor light-emitting diode dice on the production line.

Abstract: A light-emitting diode package includes: a frame unit, and at least one light-emitting diode chip including a chip body and a contact layer disposed between the chip body and the frame unit. One of the frame unit and the contact layer contains a magnetic material, and the other one of the frame unit and the contact layer contains a material capable of being magnetically attracted to the magnetic material.

Abstract: A light-emitting diode package device includes: a base unit defining a packaging space; a light-emitting diode die that is disposed inside the packaging space to electrically connect to the base unit and that is capable of emitting light; and an encapsulant that is filled in the packaging space to encapsulate the light-emitting diode die and that includes an upper surface to be exposed to external environment, and a plurality of microstructures formed on the upper surface.

Abstract: An electronic device includes a circuit protection unit providing over-current protection to a main circuit and including a series connection of first and second current limiting circuits, and a normally-open branch circuit coupled in parallel to the first current limiting circuit and operable to conduct when a voltage across the first current limiting circuit reaches a first predetermined threshold voltage not greater than an endure voltage of the first current limiting circuit. Prior to conduction of the branch circuit, the first current limiting circuit maintains a current flowing therethrough at a first limit value when a current flowing through the main circuit reaches the first limit value. Upon conduction of the branch circuit, the second current limiting circuit maintains a current flowing therethrough at a second limit value greater than the first limit value when the current flowing through the main circuit reaches the second limit value.

Abstract: An electronic device includes a circuit protection unit providing over-current protection to a main circuit and including a series connection of first and second current limiting circuits, and a normally-open branch circuit coupled in parallel to the first current limiting circuit and operable to conduct when a voltage across the first current limiting circuit reaches a first predetermined threshold voltage not greater than an endure voltage of the first current limiting circuit. Prior to conduction of the branch circuit, the first current limiting circuit maintains a current flowing therethrough at a first limit value when a current flowing through the main circuit reaches the first limit value. Upon conduction of the branch circuit, the second current limiting circuit maintains a current flowing therethrough at a second limit value greater than the first limit value when the current flowing through the main circuit reaches the second limit value.

Abstract: A structure of heat dissipation of implant type light emitting diode package having a heat column and a method of manufacturing the same include a substrate, a heat column, and a light emitting diode chip, and the heat column is implanted directly onto a predetermined position of the light emitting diode chip of the substrate and penetrated through both surfaces of a circuit board, and a distal surface of the heat column is coupled with the light emitting diode chip to form a heat conducting end, so that the operating heat produced by a light emitting diode can be dispersed from the package structure through the heat column, so as to achieve an optimal heat dissipating effect.