Patents by Inventor Po-Kai Hsu
Po-Kai Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11716860Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.Type: GrantFiled: May 26, 2020Date of Patent: August 1, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen, Wei Chen
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Publication number: 20230240151Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.Type: ApplicationFiled: March 17, 2023Publication date: July 27, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu- Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
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Publication number: 20230232638Abstract: Abstract of Disclosure A memory array includes at least one strap region, at least two sub-arrays, a plurality of staggered, dummy magnetic storage elements, and a plurality of bit line structures. The strap region includes a plurality of source line straps and a plurality of word line straps. The two sub-arrays include a plurality of staggered, active magnetic storage elements. The two sub -arrays are separated by the strap region. The staggered, dummy magnetic storage elements are disposed within the strap region. The bit line structures are disposed in the two sub-arrays, and each of the bit line structures is disposed above and directly connected with at least one of the staggered, active magnetic storage elements.Type: ApplicationFiled: February 16, 2022Publication date: July 20, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Ju-Chun Fan, Ching-Hua Hsu, Chun-Hao Wang, Yi-Yu Lin, Dong-Ming Wu, Po-Kai Hsu
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Patent number: 11700775Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.Type: GrantFiled: November 5, 2020Date of Patent: July 11, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Yi-Yu Lin, Ching-Hua Hsu, Hung-Yueh Chen
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Publication number: 20230200257Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.Type: ApplicationFiled: February 15, 2023Publication date: June 22, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Chen-Yi Weng, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen
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Patent number: 11665973Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack for forming a first MTJ; forming a first inter-metal dielectric (IMD) layer around the first MTJ; and performing a second patterning process to remove the first MTJ for forming a second MTJ and a third MTJ.Type: GrantFiled: May 3, 2022Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Patent number: 11665913Abstract: A resistive random access memory (RRAM) structure includes a substrate. A transistor is disposed on the substrate. The transistor includes a gate structure, a source and a drain. A drain contact plug contacts the drain. A metal interlayer dielectric layer is disposed on the drain contact plug. An RRAM is disposed on the drain and within a first trench in the metal interlayer dielectric layer. The RRAM includes the drain contact plug, a metal oxide layer and a top electrode. The drain contact plug serves as a bottom electrode of the RRAM. The metal oxide layer contacts the drain contact plug. The top electrode contacts the metal oxide layer and a metal layer is disposed within the first trench.Type: GrantFiled: December 2, 2021Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Yu Lin, Po-Kai Hsu, Chung-Yi Chiu
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Publication number: 20230135098Abstract: Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes a substrate having a pillar protruding from a surface of the substrate, a gate surrounding a part of a side surface of the pillar, a gate dielectric layer, a first electrode, a second electrode, a variable resistance layer, a first doped region and a second doped region. The gate dielectric layer is disposed between the gate and the pillar. The first electrode is disposed on a top surface of the pillar. The second electrode is disposed on the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The first doped region is disposed in the pillar below the gate and in a part of the substrate below the pillar. The second doped region is disposed in the pillar between the gate and the first electrode.Type: ApplicationFiled: December 3, 2021Publication date: May 4, 2023Applicant: United Microelectronics Corp.Inventors: Yi Yu Lin, Po Kai Hsu, Chun-Hao Wang, Yu-Ru Yang, Ju Chun Fan, Chung Yi Chiu
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Publication number: 20230136441Abstract: A resistive random access memory (RRAM) structure includes a substrate. A transistor is disposed on the substrate. The transistor includes a gate structure, a source and a drain. A drain contact plug contacts the drain. A metal interlayer dielectric layer is disposed on the drain contact plug. An RRAM is disposed on the drain and within a first trench in the metal interlayer dielectric layer. The RRAM includes the drain contact plug, a metal oxide layer and a top electrode. The drain contact plug serves as a bottom electrode of the RRAM. The metal oxide layer contacts the drain contact plug. The top electrode contacts the metal oxide layer and a metal layer is disposed within the first trench.Type: ApplicationFiled: December 2, 2021Publication date: May 4, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Yu Lin, Po-Kai Hsu, Chung-Yi Chiu
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Patent number: 11637233Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.Type: GrantFiled: November 1, 2020Date of Patent: April 25, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
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Publication number: 20230106156Abstract: A semiconductor device includes a first metal interconnection on a substrate, a first inter-metal dielectric (IMD) layer around the first metal interconnection, an electromigration enhancing layer on the first metal interconnection, a second IMD layer on and around the electromigration enhancing layer, and a second metal interconnection on the electromigration enhancing layer.Type: ApplicationFiled: December 5, 2022Publication date: April 6, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Publication number: 20230101233Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first metal interconnection on a substrate; forming a stop layer on the first metal interconnection; removing the stop layer to form a first opening; forming an electromigration enhancing layer in the first opening; and forming a second metal interconnection on the electromigration enhancing layer. Preferably, top surfaces of the electromigration enhancing layer and the stop layer are coplanar.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Patent number: 11616193Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.Type: GrantFiled: June 3, 2021Date of Patent: March 28, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Chen-Yi Weng, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen
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Publication number: 20230050435Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.Type: ApplicationFiled: October 26, 2022Publication date: February 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Po-Kai Hsu, Hui-Lin Wang, Ching-Hua Hsu, Yi-Yu Lin, Ju-Chun Fan, Hung-Yueh Chen
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Publication number: 20230034366Abstract: The present invention discloses a memory and a training method for neutral network based on memory. The training method includes: obtaining one or more transfer functions of a memory corresponding to one or more influence factors; determining a training plan according to an ideal case and the one or more influence factors; training the neutral network according to the training plan and the one or more transfer functions to obtain a plurality of weights of the trained neutral network; and programming the memory according to the weights.Type: ApplicationFiled: July 29, 2021Publication date: February 2, 2023Inventors: Yu-Hsuan LIN, Po-Kai HSU, Ming-Liang WEI
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Patent number: 11552241Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first metal interconnection on a substrate; forming a stop layer on the first metal interconnection; removing the stop layer to form a first opening; forming an electromigration enhancing layer in the first opening; and forming a second metal interconnection on the electromigration enhancing layer. Preferably, top surfaces of the electromigration enhancing layer and the stop layer are coplanar.Type: GrantFiled: May 12, 2020Date of Patent: January 10, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Publication number: 20220393103Abstract: A method for fabricating a magnetic random access memory (MRAM) device includes the steps of first forming a first magnetic tunneling junction (MTJ) on a substrate, forming a first top electrode on the first MTJ, and then forming a passivation layer around the first MTJ. Preferably, the passivation layer includes a V-shape and a valley point of the V-shape is higher than a top surface of the first top electrode.Type: ApplicationFiled: June 30, 2021Publication date: December 8, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Si-Han Tsai, Ching-Hua Hsu, Chen-Yi Weng, Po-Kai Hsu, Jing-Yin Jhang
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Patent number: 11522013Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.Type: GrantFiled: September 27, 2020Date of Patent: December 6, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Kai Hsu, Hui-Lin Wang, Ching-Hua Hsu, Yi-Yu Lin, Ju-Chun Fan, Hung-Yueh Chen
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Publication number: 20220367791Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.Type: ApplicationFiled: June 16, 2021Publication date: November 17, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang
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Patent number: 11495298Abstract: A three dimension memory device and a ternary content addressable memory cell are provided. The ternary content addressable memory cell includes a first memory cell, a second memory cell, a first search switch, and a second search switch. The first memory cell is disposed in a first AND type flash memory line. The second memory cell is disposed in a second AND type flash memory line. The first search switch is coupled between a first bit line corresponding to the first AND type flash memory line and a match line, and is controlled by a first search signal to be turned on or cut off. The second search switch is coupled between a second bit line corresponding to the second AND type flash memory line and the match line, and is controlled by a second search signal to be turned on or cut off.Type: GrantFiled: September 2, 2021Date of Patent: November 8, 2022Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Po-Kai Hsu, Teng-Hao Yeh, Hang-Ting Lue