Abstract: As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

Abstract: As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

Abstract: As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

Abstract: As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-?m2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.

Abstract: An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.

Abstract: A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

Abstract: By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

Abstract: A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.

Abstract: An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.

Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

Abstract: Method and apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

Abstract: An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

Abstract: A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.

Abstract: A spin-torque MRAM array has MRAM cells arranged in rows and columns. Bit lines are connected to each of the MRAM cells on each column. Source select lines are connected to each MRAM cell of a pair of rows and are oriented orthogonally to the bit lines. Write lines are connected to the gate of the gating MOS transistor of each MRAM cell of the rows. The MRAM cells are written in a two step process with selected MRAM cells written to a first logic level (0) in a first step and selected MRAM cells written to a second logic level (1) in a second step. A second embodiment of the spin-torque MRAM array has the bit lines commonly connected together to receive the data and the source select lines commonly connected together to receive an inverse of the data for writing.