Patents by Inventor PO-WEI WANG
PO-WEI WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12261188Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.Type: GrantFiled: April 17, 2023Date of Patent: March 25, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Keng-Ying Liao, Yu-Chu Lin, Chih Wei Sung, Shih Sian Wang, Chi-Chung Jen, Yu-chien Ku, Yen-Jou Wu, Huai-jen Tung, Po-Zen Chen
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Patent number: 12253694Abstract: The optical system includes a projector, a deflector, a polarizer, a first grating coupler structure, and a second grating coupler structure. The projector emits three beams having different wavelengths. The deflector is disposed below the projector and is configured to change incident angles of the three beams and to focus the three beams at the same region of the first grating coupler structure. The first grating coupler structure is below the deflector and is configured to couple the three beams into a light-guide lens such that the three beams travel the same optical path within the light-guide lens. The light-guide lens is connected to the first grating coupler structure and is configured to transmit the three beams. The polarizer is disposed between the projector and the deflector and is configured to filter out transverse electric (TE) modes or transverse magnetic (TM) modes of the three beams.Type: GrantFiled: April 28, 2022Date of Patent: March 18, 2025Assignee: VisEra Technologies Company Ltd.Inventors: Hsin-Yi Hsieh, Po-Han Fu, Hsin-Wei Mao, Wei-Ko Wang, Chin-Chuan Hsieh
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Patent number: 12252777Abstract: A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.Type: GrantFiled: May 7, 2021Date of Patent: March 18, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Sheng-Ying Wu, Ming-Hsien Lin, Po-Wei Wang, Hsiao-Feng Lu
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Publication number: 20250089334Abstract: A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.Type: ApplicationFiled: October 13, 2023Publication date: March 13, 2025Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Chen-Ming Wang, Po-Ching Su, Pei-Hsun Kao, Ti-Bin Chen, Chun-Wei Yu, Chih-Chiang Wu
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Publication number: 20250076938Abstract: An example computing device includes a flexible display coupled to a housing that includes a support plate having a first joint coupled to a first end of the support plate and a second joint coupled to a second end of the support plate. A slide module has a slot that guides a slide movement of the second joint along a path of movement within the slot as the support plate pivots about the first joint, where the support plate moves according to the first joint and the second joint to support at least the portion of the flexible display when the flexible display is unfolded and moves according to the first joint and the second joint to create a gap between at least a portion of the support plate and at least the portion of the flexible display when the flexible display is folded.Type: ApplicationFiled: November 21, 2024Publication date: March 6, 2025Inventors: Shih Wei Hsiang, Po-Kai Lai, Jengn Wen Lin, Hung-Wei Wang
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Patent number: 12237398Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.Type: GrantFiled: June 4, 2021Date of Patent: February 25, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Ming Kuo, Po-Jen Chuang, Yu-Ren Wang, Ying-Wei Yen, Fu-Jung Chuang, Ya-Yin Hsiao, Nan-Yuan Huang
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Patent number: 12237400Abstract: A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.Type: GrantFiled: April 6, 2022Date of Patent: February 25, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chieh-Wei Chen, Jian-Jou Lian, Tzu-Ang Chiang, Po-Yuan Wang, Yu-Shih Wang, Chun-Neng Lin, Ming-Hsi Yeh
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Patent number: 12232425Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.Type: GrantFiled: November 21, 2023Date of Patent: February 18, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang
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Publication number: 20250054119Abstract: A HDR tone mapping system includes several modules. A semantic segmentation module is used to extract semantic information from the input image. An image decomposition module is used to decompose the input image to a high-bit base layer and a detail layer. A statistics module is used to generate statistics of pixels of the input image according to the semantic information. A curve computation module is used to generate a tone curve from the statistics. A compression module is used to compress the high-bit base layer to a low-bit base layer according to the tone curve, the statistics and the semantic information. A detail adjustment module is used to tune the detail layer according to the semantic information and the statistics to generate an adjusted detail layer. An image reconstruction module is used to combine the adjusted detail layer and the low-bit base layer to generate an output image.Type: ApplicationFiled: August 10, 2023Publication date: February 13, 2025Applicant: MEDIATEK INC.Inventors: Huei-Han Jhuang, Jan-Wei Wang, Po-Yu Huang, Ying-Jui Chen, Chi-Cheng Ju
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Publication number: 20250048649Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.Type: ApplicationFiled: October 17, 2024Publication date: February 6, 2025Applicant: UNITED MICROELECTRONICS CORP.Inventors: Po-Wei Wang, Yi-An Shih, Huan-Chi Ma
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Patent number: 12215872Abstract: There is provided an auto detection system including a thermal detection device and a host. The host controls an indication device to indicate a prompt message or detection results according to a slope variation of voltage values or 2D distribution of temperature values detected by the thermal detection device, wherein the voltage values include the detected voltage of a single pixel or the sum of detected voltages of multiple pixels of a thermal sensor.Type: GrantFiled: July 20, 2023Date of Patent: February 4, 2025Assignee: PIXART IMAGING INC.Inventors: Chih-Ming Sun, Ming-Han Tsai, Chiung-Wen Lin, Po-Wei Yu, Wei-Ming Wang, Sen-Huang Huang
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Publication number: 20250021005Abstract: A method for extreme ultraviolet (EUV) lithography includes generating target droplets and using a first laser source to generate laser pulses to heat the target droplets to generate extreme ultraviolet (EUV) light and a plurality of particles. The method also includes using a supplemental laser source to generate laser pulses to ionize the plurality of particles, applying a magnetic field to direct ionized particles to debris collection device, and capturing the ionized particles by the debris collection device.Type: ApplicationFiled: July 12, 2023Publication date: January 16, 2025Inventors: Chia-Wei Wang, Po-Ming Shih
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Publication number: 20240413233Abstract: A GaN-based semiconductor device includes a substrate; a GaN channel layer disposed on the substrate; a AlGaN layer disposed on the GaN channel layer; a p-GaN gate layer disposed on the AlGaN layer; and a nitrogen-rich TiN hard mask layer disposed on the p-GaN gate layer. The nitrogen-rich TiN hard mask layer has a nitrogen-to-titanium (N/Ti) ratio that is greater than 1.0. A gate electrode layer is disposed on the nitrogen-rich TiN hard mask layer.Type: ApplicationFiled: July 13, 2023Publication date: December 12, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Chuan Chen, Po-Wei Wang, Huan-Chi Ma, Chien-Wen Yu
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Patent number: 12156408Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.Type: GrantFiled: November 21, 2023Date of Patent: November 26, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Wei Wang, Yi-An Shih, Huan-Chi Ma
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Publication number: 20240376592Abstract: A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.Type: ApplicationFiled: July 25, 2024Publication date: November 14, 2024Inventors: Sheng-Ying WU, Ming-Hsien LIN, Po-Wei WANG, Hsiao-Feng LU
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Publication number: 20240371626Abstract: A method, comprising: providing an adjustable distributor assembly disposed within a showerhead configured to provide selectively adjustable openings through which a cleaning material passes; determining an initial value of a configurable parameter of an adjustable distributor assembly; performing an amount/thickness measurement of a layer including polymeric residues and metal oxide deposits at a cleaning surface of a wafer by a monitoring device; determining whether a variation in the amount/thickness measurement is within an acceptable range; and in response to the variation in the amount/thickness measurement that is not within the acceptable range, automatically adjusting the configurable parameter of the adjustable distributor assembly to set the variation in the amount/thickness measurement within the acceptable range so that the cleaning material that passes through the selectively adjustable openings of the adjustable distributor assembly reduces metal oxide deposits.Type: ApplicationFiled: July 15, 2024Publication date: November 7, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Wei WANG, Chao-Hsing LAI, Hsiao-Feng LU
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Patent number: 12080545Abstract: A method, comprising: providing an adjustable distributor assembly disposed within a showerhead configured to provide selectively adjustable openings through which a cleaning material passes; determining an initial value of a configurable parameter of an adjustable distributor assembly; performing an amount/thickness measurement of a layer including polymeric residues and metal oxide deposits at a cleaning surface of a wafer by a monitoring device; determining whether a variation in the amount/thickness measurement is within an acceptable range; and in response to the variation in the amount/thickness measurement that is not within the acceptable range, automatically adjusting the configurable parameter of the adjustable distributor assembly to set the variation in the amount/thickness measurement within the acceptable range so that the cleaning material that passes through the selectively adjustable openings of the adjustable distributor assembly reduces metal oxide deposits.Type: GrantFiled: July 31, 2023Date of Patent: September 3, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Wei Wang, Chao-Hsing Lai, Hsiao-Feng Lu
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Publication number: 20240183025Abstract: Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.Type: ApplicationFiled: January 5, 2024Publication date: June 6, 2024Inventors: Po-Wei WANG, Chao-Hsing LAI
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Publication number: 20240090233Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Po-Wei Wang, Yi-An Shih, Huan-Chi Ma
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Patent number: 11885008Abstract: Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.Type: GrantFiled: February 13, 2023Date of Patent: January 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Wei Wang, Chao-Hsing Lai