Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

Abstract: An example computing device includes a flexible display coupled to a housing that includes a support plate having a first joint coupled to a first end of the support plate and a second joint coupled to a second end of the support plate. A slide module has a slot that guides a linear slide movement of the second joint along a linear path of movement within the slot as the support plate pivots about the first joint, where the support plate moves according to the first joint and the second joint to support at least the portion of the flexible display when the flexible display is unfolded and moves according to the first joint and the second joint to create a gap between at least a portion of the support plate and at least the portion of the flexible display when the flexible display is folded.

Abstract: A foldable device may include a foldable layer and a hinge mechanism. The hinge mechanism may include at least one gear module that provides for synchronized movement of the hinge mechanism about a central plane of the hinge mechanism. A lock module may be coupled the hinge mechanism. The lock module may include a cam and a plate including a plurality of recesses. The lock module may selectively lock the hinge mechanism, and the foldable device, in one of a plurality of positions, based on a position of the cam in one of the recesses.

Abstract: The present disclosure provides a method and an electronic apparatus for masking data on an electronic document. The method is performed by the electronic apparatus and includes: displaying the electronic document on a user interface; causing at least one analysis module to perform at least one analysis on the electronic document and a plurality of strings of the electronic document and output a first string among the plurality of strings and first position information associated with the first string according to a result of the at least one analysis; obtaining the first string and the first position information from the at least one analysis module; and generating, based on the first position information and the first string, a first masking object to mask the first string on the electronic document.

Abstract: A light-emitting-diode driver structure applicable to driving a display panel and operation method thereof are provided. The LED driver structure includes at least one LED driving group, and the LED driving group is composed of a plurality of LED driving circuits which are serially connected in cascade. Each LED driving circuit of the LED driving group receives a data input signal in common. Upon receiving control signals, output signals are generated to drive the display panel. The multi-point driving circuit scheme can be fully or partially applied in the driver structure as required. In addition, a plurality of enable signals can be further adopted to activate each LED driving circuit, for avoiding the FIFO register used in the prior arts. By employing the disclosed technical contents, the present invention is effective in reducing both redundant power waste and circuit layout area of a conventional LED driver.

Abstract: A GaN-based semiconductor device includes a substrate; a GaN channel layer disposed on the substrate; a AlGaN layer disposed on the GaN channel layer; a p-GaN gate layer disposed on the AlGaN layer; and a nitrogen-rich TiN hard mask layer disposed on the p-GaN gate layer. The nitrogen-rich TiN hard mask layer has a nitrogen-to-titanium (N/Ti) ratio that is greater than 1.0. A gate electrode layer is disposed on the nitrogen-rich TiN hard mask layer.

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.

Abstract: A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.

Abstract: A display control system for controlling a display panel having a plurality of display zones includes a main controller, a plurality of display driver circuits and a plurality of memories. Each of the display driver circuits is coupled to a corresponding display zone among the plurality of display zones, to control the corresponding display zone. Each of the memories is coupled to a corresponding display driver circuit among the plurality of display driver circuits, to store a compensation data for the corresponding display zone controlled by the corresponding display driver circuit. The plurality of display driver circuits are cascaded through a plurality of first transmission channels and connected through at least one second transmission channel, and each of the first transmission channels is coupled between two of the plurality of display driver circuits or between one of the plurality of display driver circuits and the main controller.

Abstract: A control system includes a plurality of driving circuits coupled in series, which include a first driving circuit and a second driving circuit. The first driving circuit includes a first receiver, a first transmitter and a first flag signal selector. The first transmitter is coupled to the first receiver, and the first flag signal selector is coupled between the first receiver and the first transmitter. The second driving circuit, coupled to the first driving circuit, includes a second receiver, a second transmitter and a second flag signal selector. The second transmitter is coupled to the second receiver, and the second flag signal selector is coupled between the second receiver and the second transmitter.

Abstract: An electronic device includes a memory usage identification circuit and a system-level cache (SLC). The memory usage identification circuit obtains a memory usage indicator that depends on memory usage of a storage space allocated in a system memory at which memory access is requested by a physical address. The SLC includes a cache memory and a cache controller. The cache controller performs cache management upon the cache memory according to the physical address and the memory usage indicator.

Abstract: A method, comprising: providing an adjustable distributor assembly disposed within a showerhead configured to provide selectively adjustable openings through which a cleaning material passes; determining an initial value of a configurable parameter of an adjustable distributor assembly; performing an amount/thickness measurement of a layer including polymeric residues and metal oxide deposits at a cleaning surface of a wafer by a monitoring device; determining whether a variation in the amount/thickness measurement is within an acceptable range; and in response to the variation in the amount/thickness measurement that is not within the acceptable range, automatically adjusting the configurable parameter of the adjustable distributor assembly to set the variation in the amount/thickness measurement within the acceptable range so that the cleaning material that passes through the selectively adjustable openings of the adjustable distributor assembly reduces metal oxide deposits.

Abstract: A foldable device may include a foldable layer and a hinge mechanism. The hinge mechanism may include at least one synchronizing module, at least one torsion module, and a cover module. The at least one synchronizing module may include a synchronizing gear assembly including a first linking gear in meshed engagement with a first rotating link, a second linking gear in meshed engagement with a second rotating link, and at least one intermediate gear in meshed engagement with the first linking gear and the second linking gear. The first rotating link may be coupled to a first housing of a computing device and the second rotating link may be coupled to a second housing of the computing device. The meshed engagement of the first and second rotating links may provide of synchronized, symmetric movement of the first and second housings about a central axis of the computing device.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

Abstract: Thermal dissipation and grounding of integrated circuit (IC) devices with backside power delivery networks are discussed. An IC device layer between frontside and backside interconnect sections, composed mostly of an insulating material, is coupled to a crystalline heat spreader or a metal thermal ground layer by an array of thermal pillars extending through the insulating material. The crystalline heat spreader layer may include one or more thermal sensors, such as thermal sensing diodes, also coupled to the IC device layer by one or more thermal pillars. The IC device layer and crystalline layers are coupled by a hybrid bond, which forms the thermal pillars through a continuous section of the insulating material.

Abstract: A magnetic device structure is provided. In some embodiments, the structure includes one or more first transistors, a magnetic device disposed over the one or more first transistors, a plurality of magnetic columns surrounding sides of the one or more first transistors and the magnetic device, a first magnetic layer disposed over the magnetic device and in contact with the plurality of magnetic columns, and a second magnetic layer disposed below the one or more first transistors and in contact with the plurality of magnetic columns.

Abstract: A magnetic random access memory structure includes a first dielectric layer; a bottom electrode layer disposed on the first dielectric layer; a spin orbit coupling layer disposed on the bottom electrode layer; a magnetic tunneling junction (MTJ) element disposed on the spin orbit coupling layer; a top electrode layer disposed on the MTJ element; a protective layer surrounding the MTJ element and the top electrode layer, and the protective layer masking the spin orbit coupling layer; and a spacer layer surrounding the protective layer.

Abstract: A magnetic random access memory structure includes a first dielectric layer, a bottom electrode layer disposed on the first dielectric layer; a spin orbit coupling layer disposed on the bottom electrode layer; a magnetic tunneling junction (MTJ) element disposed on the spin orbit coupling layer; a top electrode layer disposed on the MTJ element; a protective layer surrounding the MTJ element and the top electrode layer, and the protective layer masking the spin orbit coupling layer; a mask layer surrounding the protective layer, and a spacer layer surrounding the mask layer and the protective layer.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.