Abstract: A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor.

Abstract: A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor.

Abstract: A sidewall image transfer (SIT) process is provided. First, a substrate is provided. A sacrificial layer having a pattern is formed on the substrate. A first measuring step is performed to measure a width of the pattern of the sacrificial layer. A material layer is formed conformally on the sacrificial layer, wherein a thickness of the material layer is adjusted according to the result of the first measuring step. Then, the material layer is removed anisotropically, so the material layer becomes a spacer on a sidewall of the sacrificial layer. Lastly, the sacrificial layer is removed.

Abstract: A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor.

Abstract: A method of trimming spacers includes etching a silicon oxide spacer when forming an outmost spacer, so that a silicon carbon nitride spacer contacting the gate electrode exposes an area. The exposure area of the silicon carbon nitride spacer can then be partly removed by phosphate acid. At the end of the semiconductor process, at least part of the top surface of the silicon carbon nitride spacer will be lower than the top surface of a gate electrode.