Abstract: A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.

Abstract: A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively; first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.

Abstract: A micro-fluxgate sensor has a double-iron core assembly, a self-oscillating module, a current superimposing and amplifying module and a voltage acquisition module. The double-iron core assembly comprises a first iron core and a second iron core. The first iron core is provided with a first winding coil. The second iron core is provided with a second winding coil. The first winding coil and the second winding coil are respectively connected with an input end of the self-oscillating module, and an output end of the self-oscillating module is respectively connected with the current superimposing and amplifying module and the voltage acquisition module. The fluxgate sensor is simple in processing circuit without manual debugging and is easily integrated.

Abstract: The invention discloses a fluxgate chip packaging structure thereof. The fluxgate chip packaging structure comprises a fluxgate bare chip, a conductive pin, and a packaging layer wrapping the fluxgate bare chip and a pin tail of the conductive pin; and the fluxgate bare chip is electrically connected to the pin tail. Based on the fluxgate bare chip, the fluxgate chip packaging structure forms a universal chip which can be applied to a fluxgate current sensor; during use, the fluxgate bare chip can be quickly connected to the fluxgate current sensor through the conductive pin, and the fluxgate chip packaging structure can be matched with the internal structure of existing fluxgate current sensors to realize magnetic field detection of sensors; and the fluxgate chip packaging structure can completely replace traditional enameled wire probes, thus greatly reducing the probe size.

Abstract: A flash device includes user storage space for storing user data and over provisioning space for garbage collection within the flash device. The flash device receives an operation instruction, and then performs an operation on user data stored in the user storage space based on the operation instruction. Further, the flash device identifies a changed size of user data after performing the operation. Based on the changed size of data, a target adjustment parameter is identified. Further, the flash device adjusts the capacity of the over provisioning space according to the target adjustment parameter.

Abstract: Embodiments of the present disclosure provide a data processing method, a controller, a storage device, and a storage system. The controller adds an execution time of an IO request to the IO request, and the execution time is used to instruct the storage device to complete the IO request before the execution time expires. The controller sends, to the storage device, the IO request to which the execution time is added. When receiving the IO request, the storage device can execute the IO request based on the execution time of the IO request.

Abstract: A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.

Abstract: A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

Abstract: A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively, first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.

Abstract: A micro-fluxgate sensor has a double-iron core assembly, a self-oscillating module, a current superimposing and amplifying module and a voltage acquisition module. The double-iron core assembly comprises a first iron core and a second iron core. The first iron core is provided with a first winding coil. The second iron core is provided with a second winding coil. The first winding coil and the second winding coil are respectively connected with an input end of the self-oscillating module, and an output end of the self-oscillating module is respectively connected with the current superimposing and amplifying module and the voltage acquisition module. The fluxgate sensor is simple in processing circuit without manual debugging and is easily integrated.

Abstract: The present invention belongs to the field of agricultural acaricides, and particularly relates to a trifluoroethyl thioether (sulfoxide) substituted benzene compound and use thereof. The compound has a structure as shown in general formula I: The definition of each substituent in the formula is described in the specification. The compound of general formula I has excellent acaricidal activity and can be used to prevent and control various pest mites.

Abstract: A flash device includes user storage space for storing user data and over provisioning space for garbage collection within the flash device. The flash device receives an operation instruction, and then performs an operation on user data stored in the user storage space based on the operation instruction. Further, the flash device identifies a changed size of user data after performing the operation. Based on the changed size of data, a target adjustment parameter is identified. Further, the flash device adjusts the capacity of the over provisioning space according to the target adjustment parameter.

Abstract: A method for adjusting over provisioning space and a flash device are provided. The flash device includes user storage space for storing user data and over provisioning space for garbage collection within the flash device. The flash device receives an operation instruction, and then performs an operation on user data stored in the user storage space based on the operation instruction. Further, the flash device identifies a changed size of user data after performing the operation. Based on the changed size of data, a target adjustment parameter is identified. Further, the flash device adjusts the capacity of the over provisioning space according to the target adjustment parameter. According to the method, the over provisioning ratio can be dynamically adjusted, thereby, a life of the flash device can be prolonged.

Abstract: Embodiments of the present disclosure provide a data processing method, a controller, a storage device, and a storage system. The controller adds an execution time of an IO request to the IO request, and the execution time is used to instruct the storage device to complete the IO request before the execution time expires. The controller sends, to the storage device, the IO request to which the execution time is added. When receiving the IO request, the storage device can execute the IO request based on the execution time of the IO request.

Abstract: The present invention belongs to the field of agricultural acaricides, and particularly relates to a trifluoroethyl thioether (sulfoxide) substituted benzene compound and use thereof. The compound has a structure as shown in general formula I: The definition of each substituent in the formula is described in the specification. The compound of general formula I has excellent acaricidal activity and can be used to prevent and control various pest mites.

Abstract: A method for adjusting over provisioning space and a flash device are provided. The flash device includes user storage space for storing user data and over provisioning space for garbage collection within the flash device. The flash device receives an operation instruction, and then performs an operation on user data stored in the user storage space based on the operation instruction. Further, the flash device identifies a changed size of user data after performing the operation. Based on the changed size of data, a target adjustment parameter is identified. Further, the flash device adjusts the capacity of the over provisioning space according to the target adjustment parameter. According to the method, the over provisioning ratio can be dynamically adjusted, thereby, a life of the flash device can be prolonged.

Abstract: A method for adjusting over provisioning space and a flash device are provided. The flash device includes user storage space for storing user data and over provisioning space for garbage collection within the flash device. The flash device receives an operation instruction, and then performs an operation on user data stored in the user storage space according to the operation instruction. Further, the flash device identifies a changed size of user data after performing the operation. Based on the changed size of data, a target adjustment parameter is identified. Further, the flash device adjusts the capacity of the over provisioning space according to the target adjustment parameter. According to the method, the over provisioning ratio can be dynamically adjusted.

Abstract: A data accessing method includes: determining whether a preset cache area has cached data that a read target address points to when receiving a read instruction that includes the read target address; and finding a cache address corresponding to the read target address according to a first mapping relationship if the preset cache area has cached the data that the read target address points to, and reading data that the cache address points to from the preset cache area, where the first mapping relationship is used to record a correspondence between the target address and the cache address; orreading, from non-volatile storage space, the data that the read target address points to if the preset cache area has not cached the data that the read target address points to. By means of the method, data read errors caused by write interference can be reduced.

Abstract: A solid state disk and a data moving method are disclosed. The SSD includes a storage medium and a control chip, where storage space of the storage medium is divided into at least two blocks for storing data, and the control chip includes: a service processing module sends a moving command to a moving module; and the moving module receives the moving command; read valid data from the source block according to the moving command, and perform ECC checking on the valid data; and write checked data into a blank page of the destination block. The SSD can control movement of data from a source block to a blank page of a destination block; compared with a data moving process in which read and write are separated, a path that data moving passes through is simple and reduce impact of the data moving process on performance of the SSD.

Abstract: A method for adjusting over provisioning space and a flash device are provided. The flash device includes user storage space for storing user data and over provisioning space for garbage collection within the flash device. The flash device receives an operation instruction, and then performs an operation on user data stored in the user storage space according to the operation instruction. Further, the flash device identifies a changed size of user data after performing the operation. Based on the changed size of data, a target adjustment parameter is identified. Further, the flash device adjusts the capacity of the over provisioning space according to the target adjustment parameter. According to the method, the over provisioning ratio can be dynamically adjusted.