Abstract: A digital voltage level shifter for converting an input signal with a low voltage swing to an output signal with a high voltage swing comprises a first inverter stage for generating an inverted signal from an input signal, the inverted signal having a voltage swing between a core voltage and ground, and a second inverter stage for producing an anti-phase signal from the inverted input signal, the anti-phase signal having a voltage swing between the core voltage and ground. The first and second inverters each drive a respective thin gate NMOS transistor connected in cascode with a respective NMOS transistor. The sources of the first and second thin gate NMOS transistors are connected to ground. The gates of the NMOS transistors are connected to the output of the respective inverters through a respective capacitor and are referenced to the core voltage through a respective resistor.

Abstract: A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.

Abstract: An electric device is disclosed comprising a pn-heterojunction (4) formed by a nanowire (3) of 111-V semiconductor material and a semiconductor body (1) comprising a group IV semiconductor material. The nanowire (3) is positioned in direct contact with the surface (2) of the semiconductor body (1) and has a first conductivity type, the semiconductor body (1) has a second conductivity type opposite to the first conductivity type, the nanowire (3) forming with the semiconductor body (1) a pn-heterojunction (4). The nanowire of III-V semiconductor material can be used as a diffusion source (5) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region (6) in the semiconductor body in direct contact with the nanowire (3).

Abstract: The invention relates to a semiconductor device with a substrate (11) and a semiconductor body (12) with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base region (2) and a collector region (3), which are provided with, respectively, a first, a second and a third connection conductor (4, 5, 6), and wherein the bandgap of the base region (2) is smaller than that of the collector region (3) or of the emitter region (1), for example by the use of a silicon-germanium mixed crystal instead of pure silicon in the base region (2). Such a device is characterized by a very high speed, but its transistor shows a relatively low BVeeo. In a device (10) according to the invention the doping flux of the emitter region (1) is locally reduced by a further semiconductor region (20) of the second conductivity type which is embedded in the emitter region (1).