Abstract: A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material.

Abstract: A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material.

Abstract: A structure comprises first and at least second fin structures are formed. Each of the first and at least second fin structures has a vertically oriented semiconductor body. The vertically oriented semiconductor body is comprised of vertical surfaces. A doped region in each of the first and at least second fin structures is comprised of a concentration of dopant ions present in the semiconductor body to form a first resistor and at least a second resistor, and a pair of merged fins formed on outer portions of the doped regions of the first and at least second fin structures. The pair of merged fins is electrically connected so that the first and at least second resistors are electrically connected in parallel with each other.

Abstract: One method disclosed herein includes forming first and second gate cap protection layers that encapsulate and protect a gate cap layer. A novel transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate, a spacer structure positioned adjacent the gate structure, a layer of insulating material positioned above the substrate and around the spacer structure, a gate cap layer positioned above the gate structure and the spacer structure, and a gate cap protection material that encapsulates the gate cap layer, wherein portions of the gate cap protection material are positioned between the gate cap layer and the gate structure, the spacer structure and the layer of insulating material.

Abstract: A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material.

Abstract: An SOI substrate, a semiconductor device, and a method of backgate work function tuning. The substrate and the device have a plurality of metal backgate regions wherein at least two regions have different work functions. The method includes forming a mask on a substrate and implanting a metal backgate interposed between a buried oxide and bulk regions of the substrate thereby producing at least two metal backgate regions having different doses of impurity and different work functions. The work function regions can be aligned such that each transistor has different threshold voltage. When a top gate electrode serves as the mask, a metal backgate with a first work function under the channel region and a second work function under the source/drain regions is formed. The implant can be tilted to shift the work function regions relative to the mask.

Abstract: Shallow trench isolation structures are provided for use with UTBB (ultra-thin body and buried oxide) semiconductor substrates, which prevent defect mechanisms from occurring, such as the formation of electrical shorts between exposed portions of silicon layers on the sidewalls of shallow trench of a UTBB substrate, in instances when trench fill material of the shallow trench is subsequently etched away and recessed below an upper surface of the UTBB substrate.

Abstract: Methods for forming a buried-channel field-effect transistor include doping source and drain regions on a substrate with a dopant having a first type; forming a doped shielding layer on the substrate in a channel region having a second doping type opposite the first type to displace a conducting channel away from a gate-interface region; forming a gate dielectric over the doped shielding layer; and forming a gate on the gate dielectric.

Abstract: Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions can be deposited as layers and subsequently patterned by etching, or can be formed after formation of disposable masking spacers. Raised source and drain regions are formed on the carbon-doped semiconductor material portions and on physically exposed surfaces of the underlying semiconductor surfaces.

Abstract: An FET device structure has a Fin-FET device with a fin of a Si based material. An oxide element is abutting the fin and exerts pressure onto the fin. The Fin-FET device channel is compressively stressed due to the pressure on the fin. A further FET device structure has Fin-FET devices in a row. An oxide element extending perpendicularly to the row of fins is abutting the fins and exerts pressure onto the fins. Device channels of the Fin-FET devices are compressively stressed due to the pressure on the fins.

Abstract: An electrical circuit, planar diode, and method of forming a diode and one or more CMOS devices on the same chip. The method includes electrically isolating a portion of a substrate in a diode region from other substrate regions. The method also includes recessing the substrate in the diode region. The method further includes epitaxially forming in the diode region a first doped layer above the substrate and epitaxially forming in the diode region a second doped layer above the first doped layer.

Abstract: A method for forming an electrical device that includes forming a high-k gate dielectric layer over a semiconductor substrate that is patterned to separate a first portion of the high-k gate dielectric layer that is present on a first conductivity device region from a second portion of the high-k gate dielectric layer that is present on a second conductivity device region. A connecting gate conductor is formed on the first portion and the second portion of the high-k gate dielectric layer. The connecting gate conductor extends from the first conductivity device region over the isolation region to the second conductivity device region. One of the first conductivity device region and the second conductivity device region may then be exposed to an oxygen containing atmosphere. Exposure with the oxygen containing atmosphere modifies a threshold voltage of the semiconductor device that is exposed.

Abstract: An integrated circuit comprising an N+ type layer, a buffer layer arranged on the N+ type layer; a P type region formed on with the buffer layer; an insulator layer overlying the N+ type layer, a silicon layer overlying the insulator layer, an embedded RAM FET formed in the silicon layer and connected with a conductive node of a trench capacitor that extends into the N+ type layer, the N+ type layer forming a plate electrode of the trench capacitor, a first contact through the silicon layer and the insulating layer and electrically connecting to the N+ type layer, a first logic RAM FET formed in the silicon layer above the P type region, the P type region functional as a P-type back gate of the first logic RAM FET, and a second contact through the silicon layer and the insulating layer and electrically connecting to the P type region.

Abstract: One method disclosed herein includes forming first and second gate cap protection layers that encapsulate and protect a gate cap layer. A novel transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate, a spacer structure positioned adjacent the gate structure, a layer of insulating material positioned above the substrate and around the spacer structure, a gate cap layer positioned above the gate structure and the spacer structure, and a gate cap protection material that encapsulates the gate cap layer, wherein portions of the gate cap protection material are positioned between the gate cap layer and the gate structure, the spacer structure and the layer of insulating material.

Abstract: A buried-channel field-effect transistor includes a semiconductor layer formed on a substrate. The semiconductor layer includes doped source and drain regions and an undoped channel region. the transistor further includes a gate dielectric formed over the channel region and partially overlapping the source and drain regions; a gate formed over the gate dielectric; and a doped shielding layer between the gate dielectric and the semiconductor layer.

Abstract: One method disclosed herein includes forming first and second gate cap protection layers that encapsulate and protect a gate cap layer. A novel transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate, a spacer structure positioned adjacent the gate structure, a layer of insulating material positioned above the substrate and around the spacer structure, a gate cap layer positioned above the gate structure and the spacer structure, and a gate cap protection material that encapsulates the gate cap layer, wherein portions of the gate cap protection material are positioned between the gate cap layer and the gate structure, the spacer structure and the layer of insulating material.

Abstract: A fin field-effect transistor (finFET) device having reduced capacitance, access resistance, and contact resistance is formed. A buried oxide, a fin, a gate, and first spacers are provided. The fin is doped to form extension junctions extending under the gate. Second spacers are formed on top of the extension junctions. Each second spacer is adjacent to one of the first spacers to either side of the gate. The extension junctions and the buried oxide not protected by the gate, the first spacers, and the second spacers are etched back to create voids. The voids are filled with a semiconductor material such that a top surface of the semiconductor material extending below top surfaces of the extension junctions, to form recessed source-drain regions. A silicide layer is formed on the recessed source-drain regions, the extension junctions, and the gate not protected by the first spacers and the second spacers.

Abstract: A method of making a semiconductor device patterns a first fin in a pFET region, and patterns a second fin in an nFET region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins. A protective cap material is formed on the first fin, and the conformal layers are selectively removed from the second fin. The straining material is then thermally diffused into the first fin. The protective cap material is removed from the first fin after the thermal annealing and after the conformal micro layers are selectively removed from the second fin.

Abstract: A structure has at least one field effect transistor having a gate stack disposed between raised source drain structures that are adjacent to the gate stack. The gate stack and raised source drain structures are disposed on a surface of a semiconductor material. The structure further includes a layer of field dielectric overlying the gate stack and raised source drain structures and first contact metal and second contact metal extending through the layer of field dielectric. The first contact metal terminates in a first trench formed through a top surface of a first raised source drain structure, and the second contact metal terminates in a second trench formed through a top surface of a second raised source drain structure. Each trench has silicide formed on sidewalls and a bottom surface of at least a portion of the trench. Methods to fabricate the structure are also disclosed.

Abstract: A transistor is provided that includes a buried oxide layer above a substrate. A silicon layer is above the buried oxide layer. A gate stack is on the silicon layer, the gate stack including a high-k oxide layer on the silicon layer and a metal gate on the high-k oxide layer. A nitride liner is adjacent to the gate stack. An oxide liner is adjacent to the nitride liner. A set of faceted raised source/drain regions having a part including a portion of the silicon layer. The set of faceted raised source/drain regions also include a first faceted side portion and a second faceted side portion.